scholarly journals Synthesis of Ni-Doped ZnO Nanorod Arrays by Chemical Bath Deposition and Their Application to Nanogenerators

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2731 ◽  
Author(s):  
Yen-Lin Chu ◽  
Sheng-Joue Young ◽  
Liang-Wen Ji ◽  
Tung-Te Chu ◽  
Po-Hao Chen
Keyword(s):  
Chemical Bath Deposition ◽  
Indium Tin Oxide ◽  
Electron Beam Evaporation ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ito Glass ◽  
Evaporation Technique ◽  
Doped Zno ◽  
Cbd Method

Nanogenerators (NGs) based on Ni-doped ZnO (NZO) nanorod (NR) arrays were fabricated and explored in this study. The ZnO films were grown on indium tin oxide (ITO) glass substrates, and the NZO NRs were prepared by the chemical bath deposition (CBD) method. The samples were investigated via field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) spectral analysis. The results showed that the growth of NRs presented high-density single crystalline structures and were preferentially oriented in the c-axis direction. The optical characteristics of the NZO NRs were also measured by photoluminescence (PL) spectra. All samples exhibited two different emissions, including ultraviolet (UV) and green emissions. ITO etching paste was used to define patterns, and an electrode of Au film was evaporated onto the ITO glass substrates by the electron beam evaporation technique to assemble the NG device. In summary, ZnO NRs with Ni dopant (5 mM) showed significantly excellent performance in NGs. The optimal measured voltage, current, and power for the fabricated NGs were 0.07 V, 10.5 µA, and 735 nW, respectively.

scholarly journals STRUCTURAL AND OPTICAL PROPERTIES OF ZnO:Ga THIN FILMS DEPOSITED ON ITO/GLASS SUBSTRATES FOR OPTOELECTRONIC APPLICATIONS

2021 ◽  
Vol 20 (1) ◽  
pp. 84-93
Author(s):  
Dumitru Rusnac ◽  
◽  
Ion Lungu ◽  
Lidia Ghimpu ◽  
Gleb Colibaba ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
X Ray Diffraction ◽  
Homogeneous Surface ◽  
X Ray ◽  
Glass Substrates ◽  
Nanostructured Thin Films ◽  
Ito Glass ◽  
Doped Zno

Doped (with GaCl 3 ), undoped ZnO and ITO/ZnO:Ga nanostructured thin films are synthesized using the spray pyrolysis method. The doped ZnO thin films are synthesized at the atomic ratio of Ga/Zn added in the starting solution fixed at 1, 2, 3, and 5. Gallium-doped ZnO films synthesized on glass/ITO substrates are annealed at 450C in different environments: vacuum, oxygen, and hydrogen. X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and current–voltage (I–V) measurements are applied to characterize the structural properties, composition, surface morphology, and electrical properties of ZnO:Ga nanostructured thin films. X-ray diffraction analysis shows that ZnO:Ga films deposited on glass substrates have a dense and homogeneous surface with a hexagonal structure. The ZnO:Ga films deposited on glass/ITO substrates are composed of two phases, namely, hexagonal ZnO and cubic ITO. The I–V characteristics show the presence of good ohmic contacts between Al and In metals and ZnO:Ga thin films regardless of the nature of the substrate and the annealing atmosphere.

PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE Ta-DOPED ITO FILMS BY ELECTRON-BEAM EVAPORATION

2010 ◽  
Vol 24 (32) ◽  
pp. 3089-3095 ◽  
Author(s):  
J. Y. HUANG ◽  
G. H. FAN ◽  
T. MEI ◽  
S. W. ZHENG ◽  
Q. L. NIU ◽  
...  
Keyword(s):  
Electron Beam ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Conductive Films ◽  
Atomic Force ◽  
Average Optical Transmittance ◽  
Ito Films

Tantalum-doped indium tin oxide ( Ta -doped ITO) transparent conductive films are deposited on glass substrates by electron-beam evaporation. The effects of different Ta concentrations and annealing temperatures on the structural, morphologic, electrical, and optical properties of Ta -doped ITO films are investigated by X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic bixbyite structure of indium oxide and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 1.54×10-4 Ω ·cm is obtained from the ITO film containing 0.2 wt% tantalum annealed at 500°C and the average optical transmittance is over 95% from 425 nm to 460 nm.

Effect of N and P codoping on ZnO properties

2013 ◽  
Vol 645 ◽  
pp. 64-67 ◽  
Author(s):  
Jin Zhong Wang ◽  
Elangovan Elamurugu ◽  
Hong Tao Li ◽  
Shu Jie Jiao ◽  
Lian Cheng Zhao ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Ratio ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Nitrogen And Phosphorus ◽  
X Ray ◽  
Co Doping ◽  
Glass Substrates ◽  
Doped Zno ◽  
Co Doped

Nitrogen and Phosphorus co-doped (N+P)- zinc oxide (ZnO) films were RF sputtered on corning glass substrates at 350 °C and comparatively studied with undoped, N-, and P- doped ZnO. X-ray diffraction spectra confirmed that the ZnO structure with a preferred orientation along direction. Scanning electron microscope analysis showed different microstructure for the N+P co-doping, and thus probably confirming the co-existence of both the dopants. X-ray photoelectron spectroscopy spectra revealed that the chemical composition in N+P co-doped ZnO are different from that found in undoped, N-, and P- doped ZnO. The atomic ratio of N and P in N+P co-doped ZnO is higher than that in single N or P doped ZnO. One broad ZnO emission peak around 420 nm is observed in photoluminescence spectra. The relative intensity of the strongest peak obtained from co-doped ZnO films is about twice than the P- doped and thrice than the pure and N- doped films.

Characterization of the Thin Films Structures in Subwavelength Regime as Biosensing Materials

2015 ◽  
Vol 772 ◽  
pp. 62-66 ◽  
Author(s):  
R. Steigmann ◽  
N. Iftimie ◽  
A. Savin
Keyword(s):  
High Performance ◽  
Thermal Evaporation ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Metallic Strip

Zinc oxide nanostructured materials, such as films and nanoparticles, could provide a suitable platform for development of high performance biosensing material due to their unique fundamental material properties. This paper presents the characterization of ZnO thin film as biosensing material by metallic strip grating structure (MSG), for the real-time detection. In this work, high quality ZnO films were grown on ITO/glass substrates by vacuum thermal evaporation method. We characterized by X-ray diffraction (XRD) the film crystalline quality and by scanning electron microscopy (SEM) the film morphology.

A PbS Film Synthesized by Ultrasonic Wave Assisted Chemical Bath Deposition Method and its Application in Photoelectrochemical Cell

2013 ◽  
Vol 820 ◽  
pp. 3-6 ◽  
Author(s):  
Zhong Biao Zhao ◽  
Peng Wang ◽  
Li Bo Fan ◽  
Zi Fa Chen ◽  
Dong Luo Yang
Keyword(s):  
Ultrasonic Wave ◽  
Chemical Bath Deposition ◽  
Conduction Mechanism ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
Ito Glass ◽  
Cbd Method ◽  
P Type ◽  
Deposited Films ◽  
Type Conduction

A Lead sulfide (PbS) film synthesized by ultrasonic wave assisted chemical bath deposition (CBD) method. The as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM) measurements. The photoelectrochemical (PEC) cell, with PbS/ITO/glass as a photo cathode and Na2SO4 (0.10 M) solution as an electrolyte, was constructed and investigated for PEC properties. The film shows a p-type conduction mechanism.

Co-Doped ZnO Transparent Conductive Films for LCD and UV Detectors

2012 ◽  
Vol 500 ◽  
pp. 226-230 ◽  
Author(s):  
Yu Zhen Yuan ◽  
Hui Wang
Keyword(s):  
Liquid Crystal Display ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Uv Detectors ◽  
Transparent Conductive Films ◽  
Glass Substrates ◽  
Conductive Films ◽  
Photoconductive Detectors ◽  
Doped Zno ◽  
Co Doped

Zr,Ga co-doped ZnO transparent conductive films were deposited on glass substrates by DC magnetron sputtering at room temperature.The influence of sputtering pressure on the structural,electrical,and optical properties of Zr,Ga co-doped ZnO films was investigated by X-ray diffraction,scanning electron microscopy (SEM),digital four-point probe,and optical transmission spectroscopy.The lowest resistivity of the Zr,Ga co-doped ZnO film is 3.01×10-4Ω﹒cm.All the films present a high transmittance of above 91% in the visible range.These results make the possibility for liquid crystal display (LCD) and UV photoconductive detectors.

Design and Characterization of PbS/CdS Based Photovoltaic Cell

2013 ◽  
Vol 820 ◽  
pp. 7-10
Author(s):  
Zhong Biao Zhao ◽  
Peng Wang ◽  
Li Bo Fan ◽  
Zi Fa Chen ◽  
Zi Guan Shen
Keyword(s):  
Magnetron Sputtering ◽  
Chemical Bath Deposition ◽  
Photovoltaic Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Glass ◽  
Cbd Method ◽  
Cds Films

A PbS/CdS based photovoltaic cell was designed and characterized. The as-designed photovoltaic cell has a structure of Al/PbS/CdS/ITO/Glass. The CdS films were prepared by magnetron sputtering. The PbS films were synthesized by chemical bath deposition (CBD) method. The CdS and PbS films were characterized by X-ray diffraction (XRD) and photoelectrochemical (PEC) properties.

Influence of Sputtering Power on the Structure and Photoelectric Property of Ga Doped ZnO Films

2012 ◽  
Vol 591-593 ◽  
pp. 922-926
Author(s):  
Lei Wu ◽  
Qing Nan Zhao ◽  
Gang Wu ◽  
Deng Kui Miao
Keyword(s):  
Thin Films ◽  
Visible Light ◽  
Light Transmittance ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Hall Effect Measurements ◽  
Doped Zno

Ga-doped ZnO (GZO) films were prepared on glass substrates at 523K temperature by non-reactive DC magnetron sputtering. The effects of sputtering power on microstructure and properties of the GZO films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis-NIR spectrometer. The results show that GZO thin films exhibit high c-axis-orientation, and the intensity of peak increase as the enhanced of sputtering power; the increase of power will reduce the film’s visible-light transmittance, but for all of the GZO thin films the average transmittance of the visible-light is above 80%. The sheet resistance of GZO films decreases when the sputtering power gradually heightened from 80W to 200W. The lowest resistivity of 6.559×10-4Ω•cm can be obtained in the condition of the sputtering power is 100W, and the lowest square resistance is 7.9Ω/□.

The Effect of Sputtering Power on the Properties of Zr-Ga Co-Doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 680 ◽  
pp. 75-80
Author(s):  
Xiao Li Wu ◽  
Hui Wang ◽  
Yu Zhen Yuan
Keyword(s):  
Magnetron Sputtering ◽  
Visible Range ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Conductive Films ◽  
Sputtering Power ◽  
Doped Zno ◽  
Co Doped

Zr-Ga co-doped ZnO transparent conductive films were prepared on glass substrates by DC magnetron sputtering at room temperature. The influence of sputtering power on the structural, electrical and optical properties of Zr-Ga co-doped ZnO films was investgated by X-ray diffraction, scanning electron microscopy (SEM), digital four-point probe and optical transmission spectroscopy. The lowest resistivity of the Zr-Ga co-doped ZnO films is 3.02×10-4Ω﹒cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (3.34 eV).

Enhanced Photoelectrochemical Performance of Fe-Doped WO3 Film Electrode under Visible Light

2012 ◽  
Vol 531-532 ◽  
pp. 230-233
Author(s):  
Xiao Fang Cheng ◽  
Hong Wu Feng ◽  
Yan Qin Wang
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Indium Tin Oxide ◽  
Catalytic Performance ◽  
Dip Coating ◽  
Light Illumination ◽  
X Ray Diffraction ◽  
Photoelectrochemical Performance ◽  
Glass Substrates ◽  
Ito Glass

WO3 and Fe-doped WO3 thin films were prepared on Indium-Tin Oxide (ITO) glass substrates by a dip-coating. The samples were characterized by photoelectrochemistry, scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-Vis absorption spectroscopy, respectively. The result shows that the doping of Fe influenced absorption performance, and then influenced the catalytic performance. Compared with pure WO3, Fe-doped WO3 exhibited enhanced higher photoelectrochemical(PEC) performance and photocatalytic activity. The effect of doping concentration on the photocurrent was studied. It was found that the photocurrent under visible light displayed the highest values for 2% Fe-WO3 films annealed at 400 °C. The photocatalytic activity of the Fe-doped WO3 was evaluated in the methylene blue(MB) degradation under visible light illumination. The experiments demonstrated that MB could be efficiently degraded using the doped WO3 electrode as the photoanode which showed a higher activity than pure WO3. This provides a novel method for increasing the photon electric conversion efficiency of WO3 thin film electrodes.

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