scholarly journals Probing Temperature-Dependent Recombination Kinetics in Polymer:Fullerene Solar Cells by Electric Noise Spectroscopy

Energies ◽  
2017 ◽  
Vol 10 (10) ◽  
pp. 1490 ◽  
Author(s):  
Giovanni Landi ◽  
Carlo Barone ◽  
Costantino Mauro ◽  
Antonietta De Sio ◽  
Giovanni Carapella ◽  
...  
Keyword(s):  
Solar Cells ◽  
Temperature Dependent ◽  
Electric Noise ◽  
Noise Spectroscopy ◽  
Recombination Kinetics

scholarly journals Temperature-dependent electric noise level in different iron-based superconductors

2014 ◽  
Vol 507 (1) ◽  
pp. 012002
Author(s):  
C Barone ◽  
S Pagano ◽  
E Bellingeri ◽  
C Ferdeghini ◽  
M Adamo ◽  
...  
Keyword(s):  
Noise Level ◽  
Temperature Dependent ◽  
Iron Based Superconductors ◽  
Electric Noise ◽  
Iron Based

Charge Generation in PbS Quantum Dot Solar Cells Characterized by Temperature-Dependent Steady-State Photoluminescence

ACS Nano ◽  
2014 ◽  
Vol 8 (12) ◽  
pp. 12814-12825 ◽  
Author(s):  
Jianbo Gao ◽  
Jianbing Zhang ◽  
Jao van de Lagemaat ◽  
Justin C. Johnson ◽  
Matthew C. Beard
Keyword(s):  
Solar Cells ◽  
Steady State ◽  
Quantum Dot ◽  
Temperature Dependent ◽  
Charge Generation ◽  
Quantum Dot Solar Cells ◽  
Pbs Quantum Dot

scholarly journals Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
E. Gaubas ◽  
T. Ceponis ◽  
V. Kalendra ◽  
J. Kusakovskij ◽  
A. Uleckas
Keyword(s):  
Solar Cells ◽  
Temperature Dependent ◽  
Particle Detectors ◽  
Si Solar Cells ◽  
Diffusion Capacitance ◽  
Barrier Capacitance ◽  
Infra Red ◽  
The Impact ◽  
And Diffusion ◽  
Current Transients

Technique for barrier evaluation by measurements of current transients induced by linearly increasing voltage pulse based on analysis of barrier and diffusion capacitance changes is presented. The components of the barrier capacitance charging and generation/recombination currents are discussed. Different situations of the impact of deep center defects on barrier and diffusion capacitance changes are analyzed. Basics of the profiling of layered junction structures using the presented technique are discussed. Instrumentation for implementation of this technique and for investigations of the steady-state bias infra-red illumination and temperature dependent variations of the barrier capacitance charging and generation/recombination currents are described. Applications of this technique for the analysis of barrier quality in solar cells and particle detectors fabricated on silicon material are demonstrated.

scholarly journals Temperature dependent characteristics of poly(3 hexylthiophene)-fullerene based heterojunction organic solar cells

2003 ◽  
Vol 93 (6) ◽  
pp. 3376-3383 ◽  
Author(s):  
D. Chirvase ◽  
Z. Chiguvare ◽  
M. Knipper ◽  
J. Parisi ◽  
V. Dyakonov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Temperature Dependent

Analysis of voltage and temperature dependent photocurrent collection in p3ht/pcbm solar cells

2012 ◽  
Vol 112 (11) ◽  
pp. 114514 ◽  
Author(s):  
Bakhtyar Ali ◽  
Roy Murray ◽  
Steven S. Hegedus ◽  
S. Ismat Shah
Keyword(s):  
Solar Cells ◽  
Temperature Dependent
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