scholarly journals High-PSRR Wide-Range Supply-Independent CMOS Voltage Reference for Retinal Prosthetic Systems

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2028
Author(s):  
Ruhaifi Bin Abdullah Zawawi ◽  
Hojong Choi ◽  
Jungsuk Kim
Keyword(s):  
Power Supply ◽  
Low Voltage ◽  
Supply Voltage ◽  
Voltage Drop ◽  
Critical Role ◽  
Reference Voltage ◽  
Reference Architecture ◽  
Voltage Reference ◽  
Wide Range ◽  
Reference Circuit

This paper presents a fully integrated voltage-reference circuit for implantable devices such as retinal implants. The recently developed retinal prostheses require a stable supply voltage to drive a high-density stimulator array. Accordingly, a voltage-reference circuit plays a critical role in generating a constant reference voltage, which is provided to a low-voltage-drop regulator (LDO), and filtering out the AC ripples in a power-supply rail after rectification. For this purpose, we use a beta-multiplier voltage-reference architecture to which a nonlinear current sink circuit is added, to improve the supply-independent performance drastically. The proposed reference circuit is fabricated using the standard 0.35 µm technology, along with an LDO that adopts an output ringing compensation circuit. The novel reference circuit generates a reference voltage of 1.37 V with a line regulation of 3.45 mV/V and maximum power-supply rejection ratio (PSRR) of −93 dB.

A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Power Supply Voltage ◽  
Gyroscope System ◽  
Bandgap Voltage Reference ◽  
Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

scholarly journals A 0.6 V MOS-Only Voltage Reference for Biomedical Applications with 40 ppm/∘C Temperature Drift

2018 ◽  
Vol 27 (08) ◽  
pp. 1850128 ◽  
Author(s):  
R. Nagulapalli ◽  
K. Hayatleh ◽  
Steve Barker ◽  
Sumathi Raparthy ◽  
Nabil Yassine ◽  
...  
Keyword(s):  
Power Supply ◽  
Biomedical Applications ◽  
Low Voltage ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
Voltage Reference ◽  
Mos Transistors ◽  
Power Supply Voltage ◽  
Temperature Drift ◽  
Ultra Low Power

This paper exploits the CMOS beta multiplier circuit to synthesize a temperature-independent voltage reference suitable for low voltage and ultra-low power biomedical applications. The technique presented here uses only MOS transistors to generate Proportional To Absolute Temperature (PTAT) and Complimentary To Absolute Temperature (CTAT) currents. A self-biasing technique has been used to minimize the temperature and power supply dependency. A prototype in 65[Formula: see text]nm CMOS has been developed and occupies 0.0039[Formula: see text]mm2, and at room temperature, it generates a 204[Formula: see text]mV reference voltage with 1.3[Formula: see text]mV drift over a wide temperature range (from [Formula: see text]40[Formula: see text]C to 125[Formula: see text]C). This has been designed to operate with a power supply voltage down to 0.6[Formula: see text]V and consumes 1.8[Formula: see text]uA current from the supply. The simulated temperature coefficient is 40[Formula: see text]ppm/[Formula: see text]C.

DESIGN OF A CMOS BANDGAP REFERENCE CIRCUIT WITH A WIDE TEMPERATURE RANGE, HIGH PRECISION AND LOW TEMPERATURE COEFFICIENT

2014 ◽  
Vol 23 (08) ◽  
pp. 1450107 ◽  
Author(s):  
JUN-DA CHEN ◽  
CHENG-KAI YE
Keyword(s):  
Temperature Coefficient ◽  
High Precision ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Range ◽  
Wide Range ◽  
Bandgap Voltage Reference ◽  
Reference Circuit ◽  
Cmos Voltage Reference

This paper presents an approach to the design of a high-precision CMOS voltage reference. The proposed circuit is designed for TSMC 0.35 μm standard CMOS process. We design the first-order temperature compensation bandgap voltage reference circuit. The proposed post-simulated circuit delivers an output voltage of 0.596 V and achieves the reported temperature coefficient (TC) of 3.96 ppm/°C within the temperature range from -60°C to 130°C when the supply voltage is 1.8 V. When simulated in a smaller temperature range from -40°C to 80°C, the circuit achieves the lowest reported TC of 2.09 ppm/°C. The reference current is 16.586 μA. This circuit provides good performances in a wide range of temperature with very small TC.

scholarly journals Wide-Supply-Voltage-Range CMOS Bandgap Reference for In Vivo Wireless Power Telemetry

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2986 ◽  
Author(s):  
Ruhaifi Bin Abdullah Zawawi ◽  
Wajahat H. Abbasi ◽  
Seung-Hwan Kim ◽  
Hojong Choi ◽  
Jungsuk Kim
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Channel Length ◽  
Power Supply Voltage ◽  
Voltage Range ◽  
Power Supply Rejection Ratio ◽  
Wide Range ◽  
Reference Circuit ◽  
Inherent Problem

The robustness of the reference circuit in a wide range of supply voltages is crucial in implanted devices. Conventional reference circuits have demonstrated a weak performance over wide supply ranges. Channel-length modulation in the transistors causes the circuit to be sensitive to power supply variation. To solve this inherent problem, this paper proposes a new output-voltage-line-regulation controller circuit. When a variation occurs in the power supply, the controller promptly responds to the supply deviation and removes unwanted current in the output path of the reference circuit. The proposed circuit was implemented in a 0.35-μm SK Hynix CMOS standard process. The experimental results demonstrated that the proposed reference circuit could generate a reference voltage of 0.895 V under a power supply voltage of 3.3 V, line regulation of 1.85 mV/V in the supply range of 2.3 to 5 V, maximum power supply rejection ratio (PSRR) of −54 dB, and temperature coefficient of 11.9 ppm/°C in the temperature range of 25 to 100 °C.

Design of High Power Supply Rejection Ratio Complementary Metal-Oxide-Semiconductor Bandgap Voltage Reference Using Single Node Approach

2019 ◽  
Vol 17 (10) ◽  
pp. 777-783
Author(s):  
Shishu Pal ◽  
Ashutosh Nandi
Keyword(s):  
High Power ◽  
Power Supply ◽  
Circuit Simulation ◽  
Reference Voltage ◽  
Voltage Reference ◽  
Rejection Ratio ◽  
Power Supply Rejection Ratio ◽  
Bandgap Voltage Reference ◽  
Reference Circuit ◽  
Supply Rejection

This paper describes a compact, low voltage and high power supply rejection ratio (PSRR) Bandgap voltage reference circuit by using subthreshold MOSFETs. The proposed reference circuit is implemented using 0.18 μm CMOS technology. The circuit simulation is performed using the Cadence Spectre and Synopsys Hspice. The circuit generates the mean output reference voltage of 164 mV and temperature coefficient of 15.5 ppm/°C when temperature is swept from –40 °C to 120 °C at power supply of 1.2 V. For better PSRR, a feed forward mechanism is used. The proposed design has only single transistor for start-up circuit. The measured settling time for output reference voltage is observed to be less than 4 μs. No filtering capacitor is used to improve the PSRR, which is –97 dB up to 1 MHz and subsequently reduces to –47.5 dB at 158 MHz.

Robust True LDO Linear Voltage Regulator and Digitally Trimmable Buffered Precision Voltage Reference for High-Temperature, Low-Voltage Applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000096-000103
Author(s):  
Yoann Dusé ◽  
Fabien Laplace ◽  
Nicolas Joubert ◽  
Xavier Montmayeur ◽  
Noureddine Zitouni ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Coefficient ◽  
Low Voltage ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Voltage Regulator ◽  
Voltage Reference ◽  
Soft Start ◽  
Wide Range ◽  
Latch Up

We present in this paper two new products for high-temperature, low-voltage (2.8V to 5.5V) power management applications. The first product is an original implementation of a monolithic low dropout regulator (XTR70010), able to deliver up to 1A at 230°C with less than 1V of dropout. This new voltage regulator can source an output current level up to 1.5A. The regulated output voltage can be selected among 32 preset values from 0.5V to 3.6V in steps of 100mV, or it can be obtained with a pair of external resistors. The circuit integrates complex analog and digital control blocks providing state of the art features such as UVLO protection, chip enable control, soft start-up and soft shut-down, hiccup short-circuit protection, customer selectable thermal shut-down, input power supply protection, output overshoot remover and stability over an extremely wide range of load capacitances. The circuit offers a fair ±2% absolute accuracy and is guaranteed latch-up free. The second product is an advanced high-temperature, low-power, digitally trimmable voltage reference (XTR75020). Thanks to a custom, 1-wire serial interface, the absolute precision and the temperature coefficient can be adjusted in order to obtain an accuracy better than 0.5% with a temperature coefficient bellow ±20ppm/°C. On-chip OTP memory for trimming of absolute value and temperature coefficient makes the circuit extremely accurate and almost insensitive to drifts over time and temperature. The circuit features a class AB output buffer able to source or sink up to 5mA and remains stable with any load capacitance up to 50μF. The XTR75020 has nine preset possible output voltages. The source and sink short circuit current always remains bellow 25mA. The quiescent current consumption is 300μA typical at 230°C while the standby current is, in all cases, under 20μA. Both devices are designed on a latch-up free silicon-on-insulator process.

A High Temperature 4H-SiC Voltage Reference for Depletion Mode GaN-Based Circuits

2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000118-000121
Author(s):  
ZiHao Zhang ◽  
Jebreel M. Salem ◽  
Dong Sam Ha
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Oil And Gas ◽  
Supply Voltage ◽  
Reference Voltage ◽  
Voltage Reference ◽  
Voltage Range ◽  
Oil And Gas Exploration ◽  
Low Leakage ◽  
Temperature Applications

Abstract High temperature electronics are highly demanded for many applications such as automotive, space, and oil and gas exploration. Electronic circuits for those applications are required to operate reliably without using bulky cooling systems. Circuits based on silicon (Si) suffer from high leakage currents at high temperatures. Silicon Carbide (SiC) circuits, on the other hand, are suitable for high temperature applications due to the wide bandgap and offer high breakdown voltage and low leakage current. This paper presents a negative voltage reference for high temperature applications using commercial-off-the-shelf (COTS) 4H-SiC transistors. The proposed voltage reference adopts Widlar bandgap reference topology, and it aims to provide a negative reference voltage for Gallium Nitride (GaN) circuits operating at high temperatures. Measurement results indicate that the proposed circuit provides a negative reference voltage with a low temperature coefficient of 42 ppm/°C for temperatures ranging from 25 °C to 250 °C. The proposed circuit also operates reliably for a wide supply voltage range of −7.5 V to −15 V for the temperature range.

Integrated Bandgap Voltage Reference for High Voltage Vehicle Applications

2015 ◽  
Vol 24 (08) ◽  
pp. 1550125 ◽  
Author(s):  
Sergio Saponara
Keyword(s):  
High Voltage ◽  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Voltage Reference ◽  
Temperature Drift ◽  
Power Supply Rejection Ratio ◽  
Compact Size ◽  
Electrical Vehicles ◽  
Bandgap Voltage Reference

This work presents a bandgap voltage reference (BGR) integrated in 0.25-μm bipolar-CMOS-DMOS (BCD) technology. The BGR circuit generates a reference voltage of 1.22 V. It is able to withstand large supply voltage variations of vehicle applications from 4.5 V, e.g., in case of cranking, up to 60-V, maximum value in case of emerging 48-V battery systems for hybrid and electrical vehicles. The circuit has an embedded high-voltage (HV) pseudo-regulator block that provides a more stable internal supply rail for a cascaded low-voltage bandgap core. HV MOS are used only in the pre-regulator block thus allowing the design of a BGR with compact size. The proposed architecture permits to withstand large input voltage variations with a temperature drift of a hundred of ppm/°C, a line regulation (LR) of few mV/V versus the external supply voltage and a power supply rejection ratio (PSRR) higher than 90 dB.

A 16.4 nW, Sub-1 V, Resistor-Less Voltage Reference with BJT Voltage Divider

2018 ◽  
Vol 27 (13) ◽  
pp. 1850206 ◽  
Author(s):  
Qingshan Yang ◽  
Peiqing Han ◽  
Niansong Mei ◽  
Zhaofeng Zhang
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Voltage Divider ◽  
Total Power ◽  
Cmos Process ◽  
Operating Voltage ◽  
Voltage Reference ◽  
Ultra Low Power ◽  
Silicon Area ◽  
Total Power Consumption

A 16.4[Formula: see text]nW, sub-1[Formula: see text]V voltage reference for ultra-low power low voltage applications is proposed. This design reduces the operating voltage to 0.8[Formula: see text]V by a BJT voltage divider and decreases the silicon area considerably by eliminating resistors. The PTAT and CTAT are based on SCM structures and a scaled-down [Formula: see text], respectively, to improve the process insensitivity. This work is fabricated in 0.18[Formula: see text][Formula: see text]m CMOS process with a total area of 0.0033[Formula: see text]mm2. Measured results show that it works properly for supply voltage from 0.8[Formula: see text]V to 2[Formula: see text]V. The reference voltage is 467.2[Formula: see text]mV with standard deviation ([Formula: see text]) being 12.2 mV and measured TC at best is 38.7[Formula: see text]ppm/[Formula: see text]C ranging from [Formula: see text]C to 60[Formula: see text]C. The total power consumption is 16.4[Formula: see text]nW under the minimum supply voltage at 27[Formula: see text]C.

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