scholarly journals FTRM: A Cache-Based Fault Tolerant Recovery Mechanism for Multi-Channel Flash Devices

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1581
Author(s):  
Ronnie Mativenga ◽  
Prince Hamandawana ◽  
Tae-Sun Chung ◽  
Jongik Kim

Flash memory prevalence has reached greater extents with its performance and compactness capabilities. This enables it to be easily adopted as storage media in various portable devices which includes smart watches, cell-phones, drones, and in-vehicle infotainment systems to mention but a few. To support large flash storage in such portable devices, existing flash translation layers (FTLs) employ a cache mapping table (CMT), which contains a small portion of logical page number to physical page number (LPN-PPN) mappings. For robustness, it is of importance to consider the CMT reconstruction mechanisms during system recovery. Currently, existing approaches cannot overcome the performance penalty after experiencing unexpected power failure. This is due to the disregard of the delay caused by inconsistencies between the cached page-mapping entries in RAM and their corresponding mapping pages in flash storage. Furthermore, how to select proper pages for reconstructing the CMT when rebooting a device needs to be revisited. In this study we address these problems and propose a fault tolerant power-failure recovery mechanism (FTRM) for flash memory storage systems. Our empirical study shows that FTRM is an efficient recovery and robust protocol.

2014 ◽  
Vol 687-691 ◽  
pp. 2096-2099
Author(s):  
Yin Yang ◽  
Wen Yi Li ◽  
Kai Wang

In this paper, we propose a novel and efficient read-write optimization scheme for flash memory storage systems, we have named RWF: Read-Write FTL. In the proposed scheme, we effectively connect Logical Sector Number, Logical Block Number, Logical Page Number, Physical Page Number and Physical Block Number. RWF through uniting log blocks and physical blocks, all blocks can be used for servicing update requests. The invalid blocks could be reclaimed properly and intensively, it can avoid merging log blocks with physical blocks. At last, through the simulation test on RWF and the comparison with other schemes, which demonstrate the RWF can effectively solve data storage problems, and it greatly reduces erase count of flash devices and efficiency improves the performance of flash memory storage systems.


2014 ◽  
Vol 63 (11) ◽  
pp. 2661-2673 ◽  
Author(s):  
Hua-Wei Fang ◽  
Mi-Yen Yeh ◽  
Pei-Lun Suei ◽  
Tei-Wei Kuo

Sign in / Sign up

Export Citation Format

Share Document