scholarly journals A 2.4 GHz 20 W 8-channel RF Source Module with Solid-State Power Amplifiers for Plasma Generators

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1378
Author(s):  
Hyosung Nam ◽  
Taejoo Sim ◽  
Junghyun Kim
Keyword(s):  
Solid State ◽  
Output Power ◽  
Power Amplifier ◽  
Power Amplifiers ◽  
State Power ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Power Amplification ◽  
Plasma Generators

This paper presents a novel multi-channel type RF source module with solid-state power amplifiers for plasma generators. The proposed module is consisted of a DC control part, RF source generation part, and power amplification part. A 2-stage power amplifier (PA) is combined with a gallium arsenide hetero bipolar transistor (GaAs HBT) as a drive PA and a gallium nitride high electron mobility transistor (GaN HEMT) as a main PA, respectively. By employing 8 channels, the proposed module secures better area coverage on the wafer during semiconductor processes such as chemical vapor deposition (CVD), etching and so on. Additionally, each channel can be maintained at a constant output power because they have a gain factor tunable by a variable gain amplifier (VGA). For that reason, it is possible to have uniform plasma density on the wafer. The operating sequence is controllable by an external DC control port. Moreover, copper–tungsten (CuW) heat spreaders were applied to prevent RF performance degradation from heat generated by the high power amplifier (HPA), and a water jacket was implemented at the bottom of the power amplification part for liquid cooling. Drawing upon the measurement results, the output power at each channel was over 43 dBm (20 W) and the drain efficiency was more than 50% at 2.4 GHz.

Design and model studies for solid-state power amplification at 210 GHz

2011 ◽  
Vol 3 (3) ◽  
pp. 339-346
Author(s):  
Sebastian Diebold ◽  
Ingmar Kallfass ◽  
Hermann Massler ◽  
Matthias Seelmann-Eggebert ◽  
Arnulf Leuther ◽  
...  
Keyword(s):  
Solid State ◽  
Power Amplifiers ◽  
Communication Systems ◽  
State Power ◽  
Data Rate ◽  
High Electron ◽  
Large Signal ◽  
Gate Width ◽  
Power Added Efficiency ◽  
Transistor Model

The high millimeter-wave (mmW) frequency range offers new possibilities for high-resolution imaging and sensing as well as for high data rate wireless communication systems. The use of power amplifiers of such systems boosts the performance in terms of operating range and/or data rate. To date, however, the design of solid-state power amplifiers at frequencies about 210 GHz suffers from limited transistor model accuracy, resulting in significant deviation of simulation and measurement. This causes cost and time consuming re-design iterations, and it obstructs the possibility of design optimization ultimately leading to moderate results. For verification of the small-signal behavior of our in-house large-signal transistor model, S-parameter measurements were taken from DC to 220 GHz on pre-matched transistors. The large-signal behavior of the transistor models was verified by power measurements at 210 GHz. After model modification, based on process control monitor (PCM) measurement data, the large-signal model was found to match the measurements well. A transistor model was designed containing the statistical information of the PCM data. This allows for non-linear spread analysis and reliable load-pull simulations for obtaining the highest available circuit performance. An experimental determination of the most suitable transistor geometry (i.e. number of gate fingers and gate width) and transistor bias was taken on 100 nm gate length metamorphic high electron mobility transistor (mHEMT) transistors. The most suitable combination of number of fingers, gate width and bias for obtaining maximum gain, maximum output power, and maximum power added efficiency (PAE) at a given frequency was determined.

scholarly journals Frequency Selective Degeneration for 6–18 GHz GaAs pHEMT Broadband Power Amplifier Integrated Circuit

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1588
Author(s):  
Sungjae Oh ◽  
Eunjoo Yoo ◽  
Hansik Oh ◽  
Hyungmo Koo ◽  
Jaekyung Shin ◽  
...  
Keyword(s):  
Frequency Response ◽  
Output Power ◽  
Power Amplifier ◽  
Integrated Circuit ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Matching Networks ◽  
Chip Size ◽  
Parallel Network ◽  
Frequency Selective

In this paper, a frequency selective degeneration technique using a parallel network with a resistor and capacitor is proposed for a 6–18 GHz GaAs pseudomorphic high electron mobility transistor (pHEMT) broadband power amplifier integrated circuit (PAIC). The proposed degeneration network is applied to the source of the transistor to flatten the frequency response of the transistor in conjunction with feedback and resistor biasing circuits. An almost uniform frequency response was achieved at the wide frequency band through optimizing the values of the capacitor and resistor for the degeneration circuit. Single-section matching networks for small chip sizes were adopted for the two-stage amplifier following the flat frequency characteristics of the degenerated transistor. The proposed broadband PAIC for the 6 to 18 GHz band was fabricated using a 0.15 μm GaAs pHEMT process and had a chip size of 1.03 × 0.87 mm2. The PAIC exhibited gain of 15 dB to 17.2 dB, output power of 20.5 dBm to 22.1 dBm, and linear output power of 11.9 dBm to 13.45 dBm, which satisfies the IMD3 of −30 dBc in the 6–18 GHz band. Flatness for the gain and output power was achieved as ±1.1 dB and ±0.8 dB, respectively.

scholarly journals A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier

2010 ◽  
Vol 2 (3-4) ◽  
pp. 317-324 ◽  
Author(s):  
Paul Saad ◽  
Christian Fager ◽  
Hossein Mashad Nemati ◽  
Haiying Cao ◽  
Herbert Zirath ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Continuous Wave ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Power Added Efficiency ◽  
Average Ratio ◽  
Gan Hemt ◽  
Continuous Wave Signal ◽  
Class F

This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that −42 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, −47 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).

scholarly journals AIR-COOLED 350 W X-BAND SOLID-STATE POWER AMPLIFIER

2020 ◽  
Vol 258 (3) ◽  
pp. 43-52
Author(s):  
V. E. Akinin ◽  
O. V. Borisov ◽  
K. A. Ivanov ◽  
Yu. V. Kolkovskiy ◽  
V. M. Minnebaev ◽  
...  
Keyword(s):  
Solid State ◽  
Output Power ◽  
Power Amplifier ◽  
Microwave Power ◽  
State Power ◽  
Control Unit ◽  
Power Supplies ◽  
Amplifier Output ◽  
X Band ◽  
Secondary Power

In this paper we present the results of the design and production of an air-cooled X-band solid-state power amplifier based on AlGaN/GaN/SiC Schottky FET. The power amplifier includes: preliminary power amplifier, output power amplifiers, set of secondary power supplies, digital control unit, monitoring system for the power amplifier performance, set of microwave power waveguide combiners.

X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power

2018 ◽  
Vol 18 (11) ◽  
pp. 7451-7454
Author(s):  
Quan Wang ◽  
Xiaoliang Wang ◽  
Hongling Xiao ◽  
Cuimei Wang ◽  
Lijuan Jiang ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
X Band

scholarly journals Broadband Millimeter-Wave Power Amplifier Using Modified 2D Distributed Power Combining

Electronics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 899
Author(s):  
Jihoon Kim
Keyword(s):  
Output Power ◽  
Millimeter Wave ◽  
Power Amplifier ◽  
Power Distribution ◽  
Phase Variation ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Power Combining ◽  
Distributed Power ◽  
Power Added Efficiency

A broadband millimeter-wave (mmWave) power amplifier (PA) was implemented using a modified 2D distributed power combining technique. The proposed power combining was based on a single-ended dual-fed distributed combining (SEDFDC) design technique using zero-phase shifting (ZPS) transmission lines. To improve the input/output power distribution of each power cell within a wide frequency range, N/2-way power dividers/combiners were inserted into the distributed combining structure. Modified ZPS lines also simplified the combining structure and curbed phase variation according to the frequency. These modifications enabled power combining cells to increase without degrading the power bandwidth. The proposed PA was fabricated with a commercial 0.15 μm GaAs pseudo high electron-mobility transistor (pHEMT) monolithic microwave-integrated circuit (MMIC) process. It exhibited 20.3 to 24.2 dBm output power (Pout), 12.9 to 21.8 dB power gain, and 5.2% to 12.7% power-added efficiency (PAE) between 26 and 56 GHz.

A V-band eight-way combined solid-state power amplifier with 12.8 watt output power

2006 ◽  
Author(s):  
K. Ngo-Wah ◽  
J. Goel ◽  
Yeong-Chang Chou ◽  
R. Grundbacher ◽  
Richard Lai ◽  
...  
Keyword(s):  
Solid State ◽  
Output Power ◽  
Power Amplifier ◽  
State Power ◽  
V Band

Evaluation of GaN technology in Doherty power amplifier architectures

2010 ◽  
Vol 2 (1) ◽  
pp. 75-84 ◽  
Author(s):  
Paolo Colantonio ◽  
Franco Giannini ◽  
Rocco Giofrè ◽  
Luca Piazzon
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
Design Guidelines ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Single Output ◽  
Saturated Output Power ◽  
Doherty Power Amplifier

The aim of the present paper is to highlight the possible benefits coming from the use of the GaN high electron-mobility transistor (HEMT) technology in the Doherty power amplifier (DPA) architecture. In particular, the attention is focused on the capabilities and the relevant drawbacks of a GaN HEMT technology when designing DPAs. A deep discussion of the DPA's design guidelines is also presented through the realization of three prototypes implementing different design solutions and working at 2.14 GHz. The first example is a tuned load DPA (TL-DPA), which show an average drain efficiency of 40.7% with 3 W of saturated output power in the obtained 6 dB of output back-off. The second DPA was designed implementing a class F harmonic termination for the main device, which allows an improvement of roughly 15% in output power and efficiency behavior with respect to the TL-DPA. The last DPA was realized implementing a single output matching network for both main and auxiliary devices, which allows a relevant reduction in the size of the resulting DPA, without downgrading the overall performances.

scholarly journals Dual-band doherty power amplifier with improved reactance compensation

2021 ◽  
Vol 23 (3) ◽  
pp. 1550
Author(s):  
Li M. Yu ◽  
Narendra K. Aridas ◽  
Tarik A. Latef
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Dual Band ◽  
High Electron ◽  
High Electron Mobility ◽  
Term Evolution ◽  
Doherty Power Amplifier

In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the efficiency at the back-off point from saturation output power for selected dual frequencies in the LTE bandwidth. Measurements show that the prototype board has enhanced performance at the desired frequencies, namely a saturation output power of 40.5 dBm, and 6 dB back-off efficiencies of 43% and 47%, which exhibit a gain of approximately 10 dB at 0.8 GHz and 2.1 GHz, respectively.

scholarly journals Dual-Band, Dual-Output Power Amplifier Using Simplified Three-Port, Frequency-Dividing Matching Network

Electronics ◽  
2022 ◽  
Vol 11 (1) ◽  
pp. 144
Author(s):  
Xiaopan Chen ◽  
Yongle Wu ◽  
Weimin Wang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
Open Circuit ◽  
Dual Band ◽  
High Electron ◽  
Matching Network ◽  
Gan Hemt ◽  
Band Power ◽  
Band Signal

This study presents a dual-band power amplifier (PA) with two output ports using a simplified three-port, frequency-dividing matching network. The dual-band, dual-output PA could amplify a dual-band signal with one transistor, and the diplexer-like output matching network (OMN) divided the two bands into different output ports. A structure consisting of a λ/4 open stub and a λ/4 transmission line was applied to restrain undesired signals, which made each branch equivalent to an open circuit at another frequency. A three-stub design reduced the complexity of the OMN. Second-order harmonic impedances were tuned for better efficiency. The PA was designed with a 10-W gallium nitride high electron mobility transistor (GaN HEMT). It achieved a drain efficiency (DE) of 55.84% and 53.77%, with the corresponding output power of 40.22 and 40.77 dBm at 3.5 and 5.0 GHz, respectively. The 40%-DE bandwidths were over 200 MHz in the two bands.

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