scholarly journals A Ku-Band GaAs Multifunction Transmitter and Receiver Chipset

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1327
Author(s):  
Hyunkyu Lee ◽  
Younghwan Kim ◽  
Iljin Lee ◽  
Dongkyo Kim ◽  
Kwangwon Park ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Digital Circuit ◽  
Low Noise ◽  
High Electron ◽  
Chip Area ◽  
Digital Phase Shifter ◽  
Peak Gain ◽  
Ku Band

This paper presents a Ku-band monolithic multifunction transmitter and receiver chipset fabricated in 0.25-μm GaAs pseudomorphic high-electron mobility transistor technology. The chipset achieves a high level of integration, including a 4-bit 360° digital phase shifter, 5-bit 15.5-dB digital attenuator, amplifier and 9-bit digital serial-to-parallel converter for digital circuit control. Since the multifunction chipset includes a medium power amplifier and a low-noise amplifier, it features high P1dB and low noise figures over the full Ku-band frequencies. The multifunction transmitter shows a peak gain of 16.5 dB with output P1dB of 19.2 dBm at 15 GHz. The multifunction receiver shows a peak gain of 17.3 dB with noise figure of 2.5 dB at 15 GHz. The attenuation range is 15.5 dB with a step of 0.5 dB and the phase shift range is 360° with a step of 22.5°. Each chip area of the transmitter and receiver is 4.2 × 2.8 mm2.

scholarly journals GaN low-noise X-band MMIC amplifier.

2021 ◽  
Vol 2021 (2) ◽  
Author(s):  
E. Kudabay ◽  
◽  
A. Salikh ◽  
V.A. Moseichuk ◽  
A. Krivtsun ◽  
...  
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
Noise Figure ◽  
Supply Voltage ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Common Source ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
X Band

The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.

scholarly journals A 7.5–9 GHz GaAs Two-Channel Multi-Function Chip

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 395 ◽  
Author(s):  
Shancheng Zhou ◽  
Shouli Zhou ◽  
Jingle Zhang ◽  
Jianmin Wu ◽  
Haiqing Yang ◽  
...  
Keyword(s):  
Return Loss ◽  
Phase Shifter ◽  
Phase Error ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Attenuation Characteristic ◽  
Array Calibration ◽  
Digital Phase Shifter ◽  
And Control ◽  
Better Than

Based on the 0.5 μm GaAs enhancement/depletion (E/D) Pseudomorphic High Electron Mobility Transistor (pHEMT) process, a 7.5–9 GHz two-channel amplitude phase control multi-function chip (MFC) was developed successfully. The chip was integrated with a 6-bit digital phase shifter, a 6-bit digital attenuator, and a single pole single throw (SPST) switch in each channel. A design for the absorptive SPST switch is deployed to optimize the return loss and control channel array calibration. In the 8 dB and 16 dB attenuation bit, a switched-path-type topology is employed in order to obtain a good flatness of attenuation characteristic and achieve low additive phase shift. A 27-bit serial-to-parallel converter (SPC) was introduced to decrease the control lines and pads of the chip, and the power consumption was less than 70 mW. The measurement result shows that the insertion loss is less than −13 dB and the return loss is better than −19 dB. In both channels, the 64-state root mean square (RMS) errors of the phase shifter is less than 2° and the RMS parasitic amplitude error is less than 0.2 dB. The RMS attenuation error is less than 0.45 dB and the RMS parasitic phase error is less than 2.4°. The size of the chip is 3.5 mm × 4.5 mm.

Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

2010 ◽  
Vol 2 (3-4) ◽  
pp. 333-339 ◽  
Author(s):  
Flavia Crispoldi ◽  
Alessio Pantellini ◽  
Simone Lavanga ◽  
Antonio Nanni ◽  
Paolo Romanini ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Mems Devices ◽  
Frequency Range ◽  
Gan Hemt ◽  
Better Than

Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

scholarly journals Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

2017 ◽  
Vol 7 (1) ◽  
pp. 176
Author(s):  
Z. A. Djennati ◽  
K. Ghaffour
Keyword(s):  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Noise Model ◽  
Good Prediction ◽  
High Electron ◽  
Source Impedance ◽  
Noise Amplifier ◽  
Noise Characterization ◽  
Noise Models

In this paper, a noise revision of an InAlAs/InGaAs/InP psoeudomorphic high electron mobility transistor (pHEMT) in presented. The noise performances of the device were predicted over a range of frequencies from 1GHz to 100GHz. The minimum noise figure (NFmin), the noise resistance (Rn) and optimum source impedance (Zopt) were extracted using two approaches. A physical model that includes diffusion noise and G-R noise models and an analytical model based on an improved PRC noise model that considers the feedback capacitance Cgd. The two approaches presented matched results allowing a good prediction of the noise behaviour. The pHEMT was used to design a single stage S-band low noise amplifier (LNA). The LNA demonstrated a gain of 12.6dB with a return loss coefficient of 2.6dB at the input and greater than -7dB in the output and an overall noise figure less than 1dB.

scholarly journals 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Cyrille Gardès ◽  
Sonia Bagumako ◽  
Ludovic Desplanque ◽  
Nicolas Wichmann ◽  
Sylvain Bollaert ◽  
...  
Keyword(s):  
Low Power ◽  
High Frequency ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Ultra Low Power ◽  
Great Ability ◽  
Dc Power ◽  
Drain Bias

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequenciesfT/fmaxof 100/125 GHz together with minimum noise figureNFmin=0.5 dB and associated gainGass=12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.

X-band T/R-module front-end based on GaN MMICs

2009 ◽  
Vol 1 (4) ◽  
pp. 387-394 ◽  
Author(s):  
Patrick Schuh ◽  
Hardy Sledzik ◽  
Rolf Reber ◽  
Andreas Fleckenstein ◽  
Ralf Leberer ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Ceramic Technology ◽  
High Electron ◽  
Microstrip Technology ◽  
High Power Amplifier ◽  
Front End ◽  
X Band

Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).

Design and Simulation of S-Band Low Noise Amplifier Based on ATF-54143

2014 ◽  
Vol 577 ◽  
pp. 615-619
Author(s):  
Hai Peng Wang ◽  
Shu Hui Yang ◽  
Meng Lu Feng ◽  
Yin Chao Chen
Keyword(s):  
Standing Wave ◽  
Output Voltage ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Input Voltage ◽  
Low Noise ◽  
Simulation Software ◽  
Voltage Standing Wave Ratio ◽  
High Electron ◽  
Noise Amplifier

This design used a low noise enhanced high electron mobility transistor ATF54143 and Agilent's ADS simulation software to achieve the good performance of operating frequency at 2.45GHz, noise figure (NF) is less than 0.8dB, band gain (S21) is greater than 15dB, input voltage standing-wave ratio (VSWR1) is less than 1.4dB, output voltage standing-wave ratio (VSWR2) is less than 1.6dB.

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

Investigation of Dielectric Resonator Oscillator Using High-Electron Mobility Transistor at 26GHz for Space Applications

2021 ◽  
pp. 2250046
Author(s):  
Pinku Ranjan ◽  
Swati Khandare
Keyword(s):  
Phase Noise ◽  
Electron Mobility ◽  
Dielectric Resonator ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Design System ◽  
High Electron ◽  
Space Applications ◽  
High Electron Mobility ◽  
High Frequencies

An oscillator is a vital component as the energy source in microwave telecommunication system. Microwave oscillators designed using Gunn diode have poor DC to RF efficiency. IMPact Ionization Avalanche Transit-Time diode (IMPATT) oscillators have the drawback of poor noise performance. The transistorized oscillators have a limitation to the maximum oscillation frequency which means that they cannot be used for oscillators designed for high frequencies. To design negative series feedback Dielectric Resonator Oscillator (DRO), the resonant unit uses a dielectric resonator (DR) since it is small in size, light in weight, has high-Quality ([Formula: see text]) factor, better stability and also it is inexpensive. It has the benefits of low-phase noise, low cost, miniaturization, high stability, applicable for devices designed at high frequencies and had already been widely applied, so the research on microwave dielectric oscillator has also been one of the focus of today’s microwave integrated circuits. DRO is widely used in electronic warfare, missile, radar and communication systems. The DRO incorporates High-Electron Mobility Transistor (HEMT) as an active device since it offers higher power-added efficiency combined with excellent low-noise figures and performance. The entire circuit of DRO using HEMT at 26[Formula: see text]GHz is designed using Agilent Advanced Design System (ADS) software. In this, DRO different measurements of parameters are done such as output power which is typically [Formula: see text][Formula: see text]dBm for 26[Formula: see text]GHz DRO, phase noise at 10[Formula: see text]kHz offset for 26[Formula: see text]GHz DRO it is 80[Formula: see text]dBc/Hz. The frequency pushing and frequency pulling for 26[Formula: see text]GHz DRO its typical values are 30[Formula: see text]kHz/V and 1[Formula: see text]MHz, respectively.

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