scholarly journals A 103 dB DR Fourth-Order Delta-Sigma Modulator for Sensor Applications

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1093 ◽  
Author(s):  
Lee ◽  
Song ◽  
Roh
Keyword(s):  
High Resolution ◽  
Fourth Order ◽  
Power Efficiency ◽  
Dynamic Range ◽  
Oxide Semiconductor ◽  
Total Power ◽  
Signal To Noise ◽  
Chopper Stabilization ◽  
Delta Sigma Modulator ◽  
Delta Sigma

This paper describes a fourth-order cascade-of-integrators with feedforward (CIFF) single-bit discrete-time (DT) switched-capacitor (SC) delta-sigma modulator (DSM) for high-resolution applications. This DSM is suitable for high-resolution applications at low frequency using a high-order modulator structure. The proposed operational transconductance amplifier (OTA), used a feedforward amplifier scheme that provided a high-power efficiency, a wider bandwidth, and a higher DC gain compared to recent designs. A chopper-stabilization technique was applied to the first integrator to remove the 1/f noise from the transistor, which is inversely proportional to the frequency. The designed DSM was implemented using 0.35 µm complementary metal oxide semiconductor (CMOS) technology. The oversampling ratio (OSR) was 128, and the sampling frequency was 128 kHz. At a 500 Hz bandwidth, the signal-to-noise ratio (SNR) was 100.3 dB, the signal-to-noise distortion ratio (SNDR) was 98.5 dB, and the dynamic range (DR) was 103 dB. The measured total power dissipation was 99 µW from a 3.3 V supply voltage.

A 0.9-V 60-$\mu{\hbox {W}}$ 1-Bit Fourth-Order Delta-Sigma Modulator With 83-dB Dynamic Range

2008 ◽  
Vol 43 (2) ◽  
pp. 361-370 ◽  
Author(s):  
Jeongjin Roh ◽  
Sanho Byun ◽  
Youngkil Choi ◽  
Hyungdong Roh ◽  
Yi-Gyeong Kim ◽  
...  
Keyword(s):  
Fourth Order ◽  
Dynamic Range ◽  
Delta Sigma Modulator ◽  
Delta Sigma

A High-Resolution and Low Offset Delta-Sigma Analog to Digital Converter for Detecting Photoplethysmography Signal

2021 ◽  
Author(s):  
Eka Fitrah Pribadi ◽  
Rajeev Kumar Pandey ◽  
Paul C.-P. Chao
Keyword(s):  
High Resolution ◽  
Continuous Time ◽  
Operational Amplifier ◽  
High Frequency ◽  
Analog To Digital Converter ◽  
Digital Converter ◽  
Analog To Digital ◽  
Delta Sigma Modulator ◽  
Delta Sigma ◽  
Low Offset

Abstract A high-resolution, low offset delta-sigma analog to digital converter for detecting photoplethysmography (PPG) signal is presented in this study. The PPG signal is a bio-optical signal incorporated with heart functionality and located in the range of 0.1–10 Hz. The location to get PPG signal is on a pulsating artery. Thus the delta-sigma analog-to-digital (DS ADC) converter is designed specifically in that range. However, the DS ADC circuitry suffers from 1/f noise under 10 Hz frequency range. A chopper based operational amplifier is implemented in DS ADC to push the 1/f noise into high-frequency noise. The dc offset of the operational amplifier is also pushed to the high-frequency region. The DS ADC circuitry consists of a second-order continuous-time delta-sigma modulator. The delta-sigma modulator circuitry is designed and simulated using TSMC 180 nm technology. The continuous-time delta-sigma modulator active area layout is 746μm × 399 μm and fabricated using TSMC 180 nm technology. It operates in 100 Hz bandwidth and 4096 over-sampling ratios. The SFDR of the circuit is above 70 dB. The power consumption of the delta-sigma modulator is 35.61μW. The simulation is performed in three different kinds of corner, SS, TT, and FF corner, to guarantee the circuitry works in different conditions.

A 20-MHz BW MASH Sigma–Delta Modulator with Mismatch Noise Randomization for Multi-Bit DACs

2019 ◽  
Vol 29 (07) ◽  
pp. 2050108
Author(s):  
Di Li ◽  
Chunlong Fei ◽  
Qidong Zhang ◽  
Yani Li ◽  
Yintang Yang
Keyword(s):  
Dynamic Range ◽  
Sampling Rate ◽  
Oxide Semiconductor ◽  
Quantization Noise ◽  
Cmos Process ◽  
Noise Shaping ◽  
Signal To Noise ◽  
Sigma Delta Modulator ◽  
Sigma Delta ◽  
Chip Area

A high-linearity Multi-stAge noise SHaping (MASH) 2–2–2 sigma–delta modulator (SDM) for 20-MHz signal bandwidth (BW) was presented. Multi-bit quantizers were employed in each stage to provide a sufficiently low quantization noise level and thus improve the signal-to-noise ratio (SNR) performance of the modulator. Mismatch noise in the internal multi-bit digital-to-analog converters (DACs) was analyzed in detail, and an alternative randomization scheme based on multi-layer butterfly-type network was proposed to suppress spurious tones in the output spectrum. Fabricated in a 0.18-[Formula: see text]m single–poly 4-metal Complementary Metal Oxide Semiconductor (CMOS) process, the modulator occupied a chip area of 0.45[Formula: see text]mm2, and dissipated a power of 28.8[Formula: see text]mW from a 1.8-V power supply at a sampling rate of 320[Formula: see text]MHz. The measured spurious-free dynamic range (SFDR) was 94[Formula: see text]dB where 17-dB improvement was achieved by applying the randomizers for multi-bit DACs in the first two stages. The peak signal-to-noise and distortion ratio (SNDR) was 76.9[Formula: see text]dB at [Formula: see text]1 dBFS @ 2.5-MHz input, and the figure-of-merit (FOM) was 126[Formula: see text]pJ/conv.

A fourth-order bandwidth-reconfigurable delta—sigma modulator for audio applications

2012 ◽  
Vol 33 (7) ◽  
pp. 075002 ◽  
Author(s):  
Junqian Wang ◽  
Haifeng Yang ◽  
Rui Wei ◽  
Jun Xu ◽  
Junyan Ren
Keyword(s):  
Fourth Order ◽  
Delta Sigma Modulator ◽  
Delta Sigma

A ΣΔ MODULATOR USING GAIN-BOOST CLASS-C INVERTER FOR AUDIO APPLICATIONS

2013 ◽  
Vol 22 (10) ◽  
pp. 1340024
Author(s):  
HAO LUO ◽  
YAN HAN ◽  
RAY C. C. CHEUNG ◽  
TIANLIN CAO ◽  
XIAOPENG LIU ◽  
...  
Keyword(s):  
High Resolution ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Cmos Process ◽  
Signal To Noise ◽  
Dc Gain ◽  
Micro Power ◽  
Class C ◽  
On Chip ◽  
Σδ Modulator

This paper provides an audio 2-1 cascaded ΣΔ modulator using a novel gain-boost class-C inverter. The gain-boost class-C inverter behaves as a subthreshold amplifier. By introducing a gain-boost module, the inverter DC-gain is increased from 48 dB to 67 dB. The gain-boost class-C inverter consumes 57 μW at 1.2-V supply, where the gain-boost module consumes only 3 μW. In addition, an on-chip body bias technique is introduced to compensate the process and supply voltage variations of the class-C inverter. The proposed inverter-based ΣΔ modulator chip is implemented in 0.13-μm CMOS process, and achieves 86-dB peak-signal to noise and distortion ratio (SNDR) and 90-dB dynamic range (DR) over 22.05-KHz bandwidth at 1.2-V supply consuming 360 μW, which demonstrates that the gain-boost class-C inverter is particularly suitable for micro-power high-resolution applications.

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