scholarly journals Design of Broadband W-Band Waveguide Package and Application to Low Noise Amplifier Module

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 523 ◽  
Author(s):  
Jihoon Doo ◽  
Woojin Park ◽  
Wonseok Choe ◽  
Jinho Jeong
Keyword(s):  
Integrated Circuits ◽  
Insertion Loss ◽  
Noise Figure ◽  
Space Structure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Waveguide Section ◽  
External Bias ◽  
W Band ◽  
Noise Amplifier

In this paper, the broadband millimeter-wave waveguide package, which can cover the entire W-band (75–110 GHz) is presented and applied to build a low noise amplifier module. For this purpose, a broadband waveguide-to-microstrip transition was designed using an extended E-plane probe in a low-loss and thin dielectric substrate. The end of the probe substrate was firmly fixed on to the waveguide wall in order to minimize the performance degradation caused by the probable bending of the substrate. In addition, we predicted and analyzed in-band resonances by the simulations that are caused by the empty spaces in the waveguide package to accommodate integrated circuits (ICs) and external bias circuits. These resonances are removed by designing an asymmetrical bias space structure with a radiation boundary at an external bias connection plane. The bond-wires, which are used to connect the ICs with the transition, can generate impedance mismatches and limit the bandwidth performance of the waveguide package. Their effect is carefully compensated for by designing the broadband two-section matching circuits in the transition substrate. Finally, the broadband waveguide package is designed using a commercial three-dimensional electromagnetic structure simulator and applied to build a W-band low noise amplifier module. The measurement of the back-to-back connected waveguide-to-microstrip transition including the empty spaces for the ICs and bias circuits showed the insertion loss less than 3.5 dB and return loss higher than 13.3 dB across the entire W-band without any in-band resonances. The measured insertion loss includes the losses of 8.7 mm-long microstrip line and 41.8 mm-long waveguide section. The designed waveguide package was utilized to build the low noise amplifier module that had a measured gain greater than 14.9 dB from 75 GHz to 105 GHz (>12.9 dB at the entire W-band) and noise figure less than 4.4 dB from 93.5 GHz to 94.5 GHz.

Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure

2007 ◽  
Vol 17 (7) ◽  
pp. 546-548 ◽  
Author(s):  
T. Gaier ◽  
L. Samoska ◽  
A. Fung ◽  
W. R. Deal ◽  
V. Radisic ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier

A W-band low-noise amplifier with 22K noise temperature

2009 ◽  
Author(s):  
Eric W. Bryerton ◽  
Xiaobing Mei ◽  
Young-Min Kim ◽  
William Deal ◽  
Wayne Yoshida ◽  
...  
Keyword(s):  
Noise Temperature ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
W Band ◽  
Noise Amplifier

scholarly journals A 0.18um CMOS Low Noise Amplifier for 3-5ghz UWB Receivers

2018 ◽  
Vol 7 (3.6) ◽  
pp. 84
Author(s):  
N Malika Begum ◽  
W Yasmeen
Keyword(s):  
Power Supply ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Noise Amplifier ◽  
5 Ghz ◽  
Chebyshev Filter ◽  
Minimum Noise

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.  

scholarly journals A 2.4 GHz low noise amplifier design at 130nm CMOS technology using common gate topology for WiFi / WiMAX application

2017 ◽  
Vol 7 (1.3) ◽  
pp. 69
Author(s):  
M. Ramana Reddy ◽  
N.S Murthy Sharma ◽  
P. Chandra Sekhar
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Power Consumption ◽  
Common Gate ◽  
Chip Size ◽  
Overall Performance ◽  
Amplifier Design ◽  
Noise Amplifier

The proposed work shows an innovative designing in TSMC 130nm CMOS technology. A 2.4 GHz common gate topology low noise amplifier (LNA) using an active inductor to attain the low power consumption and to get the small chip size in layout design. By using this Common gate topology achieves the noise figure of 4dB, Forward gain (S21) parameter of 14.7dB, and the small chip size of 0.26 mm, while 0.8mW power consuming from a 1.1V in 130nm CMOS gives the better noise figure and improved the overall performance.

scholarly journals Design of Low Power UWB CMOS Low Noise Amplifier using Active Inductor for WLAN Receiver

2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Wide Band ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Active Inductor ◽  
Chip Area ◽  
Noise Amplifier

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  

RF Sensor Modules – Needs for Multifunctional Architectures

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000207-000210
Author(s):  
Martin Oppermann ◽  
Felix Thurow ◽  
Ralf Rieger
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Loss ◽  
Reflow Soldering ◽  
Operating Modes ◽  
Front End ◽  
Multilayer Ceramic ◽  
Noise Amplifier ◽  
Rf Pcb

Abstract Next generation of RF sensor modules, mainly for airborne applications, will cover a variety of multifunction in terms of different operating modes, e.g. Radar, EW and Communications / Datalinks. The operating frequencies will cover a bandwidth of &gt; 10 GHz and for realisation of modern Active Electronically Steered Antennas (AESA) the Transmit/Receive (T/R) modules have to match with challenging geometry demands, and RF requirements, like switching and filtering between different operational frequencies in transmit and receive mode. New GaN technology based MMICs, e.g. LNA, HPA are in development and multifunctional components (MFC MMICs) cover more than one RF function in one chip. Different front end demonstrators will be presented, based on multilayer ceramic (LTCC) and RF-PCB and associated assembly technologies, like chip&wire and SMD reflow soldering. These TRM front ends include a Low Noise Amplifier with an integrated Switch (LNA/SW) and for characterisation the measured Noise Figure (NF), a key characteristic for receive performance, will be compared. The need for high integration on module level is obvious and therefore specific demands for low loss ceramic and PCB based modules, packages and housings exist.

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