scholarly journals A Radiation-Hardened Instrumentation Amplifier for Sensor Readout Integrated Circuits in Nuclear Fusion Applications

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 429 ◽  
Author(s):  
Kyungsoo Jeong ◽  
Duckhoon Ro ◽  
Gwanho Lee ◽  
Myounggon Kang ◽  
Hyung-Min Lee
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Radiation Effects ◽  
Nuclear Fusion ◽  
Oxide Semiconductor ◽  
Instrumentation Amplifier ◽  
Cmos Process ◽  
Readout Integrated Circuit ◽  
Nuclear Fusion Reactor ◽  
Radiation Hardened

A nuclear fusion reactor requires a radiation-hardened sensor readout integrated circuit (IC), whose operation should be tolerant against harsh radiation effects up to MGy or higher. This paper proposes radiation-hardening circuit design techniques for an instrumentation amplifier (IA), which is one of the most sensitive circuits in the sensor readout IC. The paper studied design considerations for choosing the IA topology for radiation environments and proposes a radiation-hardened IA structure with total-ionizing-dose (TID) effect monitoring and adaptive reference control functions. The radiation-hardened performance of the proposed IA was verified through model-based circuit simulations by using compact transistor models that reflected the TID effects into complementary metal–oxide–semiconductor (CMOS) parameters. The proposed IA was designed with the 65 nm standard CMOS process and provides adjustable voltage gain between 3 and 15, bandwidth up to 400 kHz, and power consumption of 34.6 μW, while maintaining a stable performance over TID effects up to 1 MGy.

scholarly journals Fully Differential Chopper-Stabilized Multipath Current-Feedback Instrumentation Amplifier with R-2R DAC Offset Adjustment for Resistive Bridge Sensors

2019 ◽  
Vol 10 (1) ◽  
pp. 63 ◽  
Author(s):  
Yongsu Kwon ◽  
Hyungseup Kim ◽  
Jaesung Kim ◽  
Kwonsang Han ◽  
Donggeun You ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Instrumentation Amplifier ◽  
Cmos Process ◽  
Current Feedback ◽  
Readout Integrated Circuit ◽  
Fully Differential ◽  
Chopper Stabilization ◽  
Rejection Ratio

A fully differential multipath current-feedback instrumentation amplifier (CFIA) for a resistive bridge sensor readout integrated circuit (IC) is proposed. To reduce the CFIA’s own offset and 1/f noise, a chopper stabilization technique is implemented. To attenuate the output ripple caused by chopper up-modulation, a ripple reduction loop (RRL) is employed. A multipath architecture is implemented to compensate for the notch in the chopping frequency band of the transfer function. To prevent performance degradation resulting from external offset, a 12-bit R-2R digital-to-analog converter (DAC) is employed. The proposed CFIA has an adjustable gain of 16–44 dB with 5-bit programmable resistors. The proposed resistive sensor readout IC is implemented in a 0.18 μm complementary metal-oxide-semiconductor (CMOS) process. The CFIA draws 169 μA currents from a 3.3 V supply. The simulated input-referred noise and noise efficiency factor (NEF) are 28.3 nV/√Hz and 14.2, respectively. The simulated common-mode rejection ratio (CMRR) is 162 dB, and the power supply rejection ratio (PSRR) is 112 dB.

Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

2016 ◽  
Vol 13 (4) ◽  
pp. 143-154 ◽  
Author(s):  
Jim Holmes ◽  
A. Matthew Francis ◽  
Ian Getreu ◽  
Matthew Barlow ◽  
Affan Abbasi ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Synthesis ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Timing Models ◽  
High Temperature Operation

In the last decade, significant effort has been expended toward the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor devices including junction field-effect transistors and metal-oxide-semiconductor (MOS) field-effect transistors have been pursued and demonstrated. More recently, advances in low-power complementary MOS (CMOS) devices have enabled the development of highly integrated digital, analog, and mixed-signal integrated circuits. The results of elevated temperature testing (as high as 500°C) of several building block circuits for extended periods (up to 100 h) are presented. These designs, created using the Raytheon UK's HiTSiC® CMOS process, present the densest, lowest-power integrated circuit technology capable of operating at extreme temperatures for any period. Based on these results, Venus nominal temperature (470°C) transistor models and gate-level timing models were created using parasitic extracted simulations. The complete CMOS digital gate library is suitable for logic synthesis and lays the foundation for complex integrated circuits, such as a microcontroller. A 16-bit microcontroller, based on the OpenMSP 16-bit core, is demonstrated through physical design and simulation in SiC-CMOS, with an eye for Venus as well as terrestrial applications.

scholarly journals A 24.88 nV/√Hz Wheatstone Bridge Readout Integrated Circuit with Chopper-Stabilized Multipath Operational Amplifier

2020 ◽  
Vol 10 (1) ◽  
pp. 399 ◽  
Author(s):  
Kwonsang Han ◽  
Hyungseup Kim ◽  
Jaesung Kim ◽  
Donggeun You ◽  
Hyunwoo Heo ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Operational Amplifier ◽  
Wheatstone Bridge ◽  
Input Resistance ◽  
Cmos Technology ◽  
Low Noise ◽  
Oxide Semiconductor ◽  
Instrumentation Amplifier ◽  
Readout Integrated Circuit ◽  
Chopper Stabilization

This paper proposes a low noise readout integrated circuit (IC) with a chopper-stabilized multipath operational amplifier suitable for a Wheatstone bridge sensor. The input voltage of the readout IC changes due to a change in input resistance, and is efficiently amplified using a three-operational amplifier instrumentation amplifier (IA) structure with high input impedance and adjustable gain. Furthermore, a chopper-stabilized multipath structure is applied to the operational amplifier, and a ripple reduction loop (RRL) in the low frequency path (LFP) is employed to attenuate the ripple generated by the chopper stabilization technique. A 12-bit successive approximation register (SAR) analog-to-digital converter (ADC) is employed to convert the output voltage of the three-operational amplifier IA into digital code. The Wheatstone bridge readout IC is manufactured using a standard 0.18 µm complementary metal-oxide-semiconductor (CMOS) technology, drawing 833 µA current from a 1.8 V supply. The input range and the input referred noise are ±20 mV and 24.88 nV/√Hz, respectively.

scholarly journals New Radiation-Hardened Design of a CMOS Instrumentation Amplifier and its Tolerant Characteristic Analysis

Electronics ◽  
2020 ◽  
Vol 9 (3) ◽  
pp. 388 ◽  
Author(s):  
Minwoong Lee ◽  
Seongik Cho ◽  
Namho Lee ◽  
Jongyeol Kim
Keyword(s):  
Integrated Circuits ◽  
Nuclear Power ◽  
Power Plants ◽  
Complementary Metal Oxide Semiconductor ◽  
Low Power Design ◽  
Oxide Semiconductor ◽  
Instrumentation Amplifier ◽  
Negative Effects ◽  
Characteristic Analysis ◽  
Radiation Hardened

A radiation-hardened instrumentation amplifier (IA) that allows precise measurement in radiation environments, including nuclear power plants, space environments, and radiation therapy rooms, was designed and manufactured, and its characteristics were verified. Most electronic systems are currently designed using silicon-based complementary metal-oxide semiconductor (CMOS) integrated circuits (ICs) to achieve a highly integrated low-power design. However, fixed charges induced in silicon by ionization radiation cause various negative effects, resulting in, for example, the generation of leakage current in circuits, performance degradation, and malfunction. Given that such problems in radiation environments may directly lead to a loss of life or environmental contamination, it is critical to implement radiation-hardened CMOS IC technology. In this study, an IA used to amplify fine signals of the sensors was designed and fabricated in the 0.18 μm CMOS bulk process. The IA contained sub-circuits that ensured the stable voltage supply needed to implement system-on-chip (SoC) solutions. It was also equipped with special radiation-hardening technology by applying an I-gate n-MOSFET that blocks the radiation-induced leakage currents. Its ICs were verified to provide the intended performance following a total cumulative dose of up to 25 kGy(Si), ensuring its safety in radiation environments.

scholarly journals Readout Integrated Circuit for Small-Sized and Low-Power Gas Sensor Based on HEMT Device

Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5637
Author(s):  
Seungjun Lee ◽  
Joohwan Jin ◽  
Jihyun Baek ◽  
Juyong Lee ◽  
Hyungil Chae
Keyword(s):  
Low Power ◽  
Gas Sensor ◽  
Integrated Circuit ◽  
Hydrogen Gas ◽  
Oxide Semiconductor ◽  
Sensor System ◽  
Cmos Process ◽  
High Electron ◽  
Readout Integrated Circuit ◽  
Detection Unit

This paper presents a small-sized, low-power gas sensor system combining a high-electron-mobility transistor (HEMT) device and readout integrated circuit (ROIC). Using a semiconductor-based HEMT as a gas-sensing device, it is possible to secure high sensitivity, reduced complexity, low power, and small size of the ROIC sensor system. Unlike existing gas sensors comprising only HEMT elements, the proposed sensor system has both an ROIC and a digital controller and can control sensor operation through a simple calibration process with digital signal processing while maintaining constant performance despite variations. The ROIC mainly consists of a transimpedance amplifier (TIA), a negative-voltage generator, and an analog-to-digital converter (ADC) and is designed to match a minimum target detection unit of 1 ppm for hydrogen. The prototype ROIC for the HEMT presented herein was implemented in a 0.18 µm complementary metal–oxide–semiconductor (CMOS) process. The total measured power consumption and detection unit of the proposed ROIC for hydrogen gas were 3.1 mW and 2.6 ppm, respectively.

High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000242-000248 ◽  
Author(s):  
A. Matthew Francis ◽  
Jim Holmes ◽  
Nick Chiolino ◽  
Matthew Barlow ◽  
Affan Abbasi ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Synthesis ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Mos Devices ◽  
Timing Models

Abstract In the last decade, significant effort has been expended towards the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor devices including junction field effect transistors and metal-oxide-semiconductor field effect transistors have been pursued and demonstrated. More recently1,2, advances in low-power complementary MOS devices have enabled the development of highly-integrated digital, analog and mixed-signal integrated circuits. The results of elevated temperature testing (as high as 500°C) for extended periods (up to 100 hours) of several building block circuits will be presented. These designs, created using the Raytheon UK's HiTSiC® CMOS process, present the densest, lowest-power integrated circuit technology capable of operating at these extreme temperatures for any period of time. Based on these results, Venus nominal temperature (470°C) SPICE m°dels and gate-level timing models were created using parasitic extracted simulations. The complete CMOS digital gate library is suitable for logic synthesis and lays the foundation for complex integrated circuits, such as a microcontroller in SiC-CMOS, with an eye for Venus as well as terrestrial applications.

HIGH INDUCTANCE COIL EMBEDDED ON MAGNETIC SENSOR CHIP FOR BIOMAGNETIC SIGNAL MEASUREMENTS

2013 ◽  
Vol 27 (26) ◽  
pp. 1350159
Author(s):  
HYUNJUNE LYU ◽  
JUN RIM CHOI
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Magnetic Sensor ◽  
Oxide Semiconductor ◽  
Sensor Chip ◽  
Instrumentation Amplifier ◽  
Cmos Process ◽  
Band Pass Filter ◽  
Current Feedback ◽  
Pass Filter ◽  
Inductance Coil

For the purpose of biomagnetic measurements, a magnetic sensor chip is manufactured using a 0.18 μm complementary metal–oxide–semiconductor (CMOS) process. A high-inductance coil and an instrumentation amplifier (IA) are embedded on this chip. The embedded high-inductance coil sensor contains suitable sensitivity and bandwidth for biomagnetic measurements, and is designed via electromagnetic field simulation. A low-gm operational transconductance amplifier (OTA) is also implemented on the chip to reduce the transconductance value. The output signal sensitivity of the magnetic sensor chip is 3.25 fT/μV, and the output reference noise is [Formula: see text]. The instrumentation amplifier is designed to minimize the magnetic signal noise using current feedback and a band-pass filter (BPF) with a bandwidth between 0.5 kHz and 5 kHz. The common-mode rejection ratio (CMRR) is measured at 117.5 dB by the Multi-Project Chip test. The proposed magnetic sensor chip is designed such that the input reference noise is maintained below 0.87 μV.

scholarly journals Mitigating MOSFET Radiation Effects by Using the Wave Layout in Analog ICs Applications

2015 ◽  
Vol 10 (1) ◽  
pp. 30-37
Author(s):  
Rafael Navarenho De Souza ◽  
Marcilei A. Guazzelli ◽  
Salvador P. Gimenez
Keyword(s):  
Integrated Circuits ◽  
Manufacturing Process ◽  
Field Effect ◽  
Radiation Effects ◽  
Field Effect Transistors ◽  
Geometric Characteristic ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Medical Applications ◽  
Source Regions

This paper presents an experimental comparative study of the Total Ionizing Dose (TID) effects between the Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with the Wave (S gate geometry) and the standard layout (CnM). Because of the special geometric characteristic of the gate, drain and source regions of the Wave MOSFET (WnM), this innovative layout proposal for transistors is able to mitigate the TID effects in order to implement in analog integrated circuits (IC) for space and medical applications without causing any additional cost to the Complementary MOS (CMOS) manufacturing process.

Digital and Analogue Integrated Circuits in Silicon Carbide for High Temperature Operation

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000373-000377 ◽  
Author(s):  
E.P Ramsay ◽  
D.T. Clark ◽  
J.D. Cormack ◽  
A.E. Murphy ◽  
D.A Smith ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Nand Gate ◽  
Cmos Process ◽  
Flip Flop ◽  
Aero Engines ◽  
Simple Logic ◽  
High Temperature Operation

A need for high temperature integrated circuits is emerging in a number of application areas. As Silicon Carbide power discrete devices become more widely available, there is a growing need for control ICs capable of operating at the same temperatures and mounted on the same modules. Also, the use of high temperature sensors, in, for example, aero engines and in deep hydrocarbon and geothermal drilling applications results in a demand for high temperature sensor interface ICs. This paper presents new results on a range of simple logic and analogue circuits fabricated on a developing Silicon Carbide CMOS process which is intended for mixed signal integrated circuit applications such as those above. A small family of logic circuits, pin compatible with the 74xx series TTL logic parts, has been designed, fabricated and tested and includes, for example, a Quad Nand gate and a Dual D-type flip-flop. These have been found to be functional from room temperature up to 400°C. Analogue blocks have been investigated with a view to using switched capacitor or autozero techniques to compensate for temperature and time induced drifts, allowing very high temperature operation.

RADIATION-TOLERANT DESIGN FOR HIGH PERFORMANCE MIXED-SIGNAL CIRCUITS

2004 ◽  
Vol 14 (02) ◽  
pp. 353-366 ◽  
Author(s):  
W. T. HOLMAN
Keyword(s):  
Integrated Circuits ◽  
Analog Circuits ◽  
High Performance ◽  
Radiation Effects ◽  
Mixed Signal ◽  
Mixed Signal Circuits ◽  
Dose Rate Effects ◽  
Current Design ◽  
Radiation Hardened ◽  
Radiation Tolerant

Modern semiconductor processes can provide significant intrinsic hardness against radiation effects in digital and analog circuits. Current design techniques using commercial processes for radiation-tolerant integrated circuits are summarized, with an emphasis on their application in high performance mixed-signal circuits and systems. Examples of "radiation hardened by design" (RHBD) methodologies are illustrated for reducing the vulnerability of circuits and components to total dose, single-event, and dose-rate effects.

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