Dependence of Irradiated High-Power Electromagnetic Waves on the Failure Threshold Time of Semiconductors Using a Closed Waveguide
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The failure threshold time of semiconductors caused by the impact of irradiated high-power electromagnetic waves (HPEM) is experimentally studied. A SN7442 integrated circuit (IC) is placed in an emulator with a WR430 closed waveguide and is irradiated by HPEM generated from a magnetron oscillator. The state of the SN7442 component is observed by a light-emitting diode (LED) detector and the voltage measured in the SN7442 component. As the magnitude of the electric field in the HPEM is varied from 24 kV/m to 36 kV/m, the failure threshold time falls from 195 s to 17 s with dependence of the irradiated electric field (E) on the failure threshold time (T) from T~E−12 to a T~E−6.
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2001 ◽
Vol 40
(Part 2, No. 7A)
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pp. L678-L680
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2017 ◽
Vol 28
(23)
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pp. 17557-17569
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2017 ◽
Vol 14
(4)
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pp. 4846-4862
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2016 ◽
Vol 9
(4)
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pp. 165-176
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