scholarly journals Noise Efficient Integrated Amplifier Designs for Biomedical Applications

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1522
Author(s):  
Sebastian Simmich ◽  
Andreas Bahr ◽  
Robert Rieger
Keyword(s):  
Cmos Technology ◽  
Low Noise ◽  
Noise Power ◽  
Neural Signals ◽  
Monolithically Integrated ◽  
Noise Current ◽  
Current Consumption ◽  
Recent Developments ◽  
Amplifier Design ◽  
Commercial Applications

The recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical amplifier design based on CMOS technology, including lateral bipolar devices. Seven major circuit topology categories are identified and analyzed on a per-channel basis in terms of their noise-efficiency factor (NEF), input-referred absolute noise, current consumption, and area. A historical trend towards lower NEF is observed whilst absolute noise power and current consumption exhibit a widespread over more than five orders of magnitude. The performance of lateral bipolar transistors as amplifier input devices is examined by transistor-level simulations and measurements from five different prototype designs fabricated in 180 nm and 350 nm CMOS technology. The lowest measured noise floor is 9.9 nV/√Hz with a 10 µA bias current, which results in a NEF of 1.2.

scholarly journals A 2.4 GHz low noise amplifier design at 130nm CMOS technology using common gate topology for WiFi / WiMAX application

2017 ◽  
Vol 7 (1.3) ◽  
pp. 69
Author(s):  
M. Ramana Reddy ◽  
N.S Murthy Sharma ◽  
P. Chandra Sekhar
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Power Consumption ◽  
Common Gate ◽  
Chip Size ◽  
Overall Performance ◽  
Amplifier Design ◽  
Noise Amplifier

The proposed work shows an innovative designing in TSMC 130nm CMOS technology. A 2.4 GHz common gate topology low noise amplifier (LNA) using an active inductor to attain the low power consumption and to get the small chip size in layout design. By using this Common gate topology achieves the noise figure of 4dB, Forward gain (S21) parameter of 14.7dB, and the small chip size of 0.26 mm, while 0.8mW power consuming from a 1.1V in 130nm CMOS gives the better noise figure and improved the overall performance.

scholarly journals CMOS Ultra-Wideband Low Noise Amplifier Design

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
K. Yousef ◽  
H. Jia ◽  
R. Pokharel ◽  
A. Allam ◽  
M. Ragab ◽  
...  
Keyword(s):  
Impedance Matching ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Output Impedance ◽  
Integrated Inductor ◽  
Technology Process ◽  
Amplifier Design ◽  
Noise Amplifier

This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.

scholarly journals The Impact of Microelectronics on High Energy Physics Innovation: The Role of 65 nm CMOS Technology on New Generation Particle Detectors

2021 ◽  
Vol 9 ◽  
Author(s):  
N. Demaria
Keyword(s):  
Particle Physics ◽  
High Energy Physics ◽  
Hadron Collider ◽  
Cmos Technology ◽  
High Energy ◽  
Main Role ◽  
Noise Power ◽  
Recent Developments ◽  
The Impact ◽  
Energy Physics

The High Luminosity Large Hadron Collider (HL-LHC) at CERN will constitute a new frontier for the particle physics after the year 2027. Experiments will undertake a major upgrade in order to stand this challenge: the use of innovative sensors and electronics will have a main role in this. This paper describes the recent developments in 65 nm CMOS technology for readout ASIC chips in future High Energy Physics (HEP) experiments. These allow unprecedented performance in terms of speed, noise, power consumption and granularity of the tracking detectors.

scholarly journals Fabrication of a CMOS-based Imaging Chip with Monolithically Integrated RGB and NIR Filters

Proceedings ◽  
2019 ◽  
Vol 2 (13) ◽  
pp. 751
Author(s):  
Bart Vereecke ◽  
Els Van Besien ◽  
Deniz Sabuncuoglu Tezcan ◽  
Nick Spooren ◽  
Nicolaas Tack ◽  
...  
Keyword(s):  
Bandpass Filter ◽  
Imaging System ◽  
Low Cost ◽  
Cmos Technology ◽  
Image Sensors ◽  
Single Chip ◽  
Interference Filters ◽  
Monolithically Integrated ◽  
Recent Developments

Recent developments in multispectral cameras have demonstrated how compact and low-cost spectral sensors can be made by monolithically integrating filters on top of commercially available image sensors. In this paper, the fabrication of a RGB + NIR variation to such a single-chip imaging system is described, including the integration of a metallic shield to minimize crosstalk, and two interference filters: a NIR blocking filter, and a NIR bandpass filter. This is then combined with standard polymer based RGB colour filters. Fabrication of this chip is done in imec’s 200 mm cleanroom using standard CMOS technology, except for the addition of RGB colour filters and microlenses, which is outsourced.

scholarly journals An efficient design of 45-nm CMOS low-noise charge sensitive amplifier for wireless receivers

2022 ◽  
Vol 12 (2) ◽  
pp. 1274
Author(s):  
Islam T. Almalkawi ◽  
Ashraf H. Al-Bqerat ◽  
Awni Itradat ◽  
Jamal N. Al-Karaki
Keyword(s):  
Power Consumption ◽  
Signal To Noise Ratio ◽  
Cmos Technology ◽  
Channel Length ◽  
Low Noise ◽  
Efficient Design ◽  
Wireless Devices ◽  
Noise Spectral Density ◽  
Wireless Applications ◽  
Amplifier Design

<p>Amplifiers are widely used in signal receiving circuits, such as antennas, medical imaging, wireless devices and many other applications. However, one of the most challenging problems when building an amplifier circuit is the noise, since it affects the quality of the intended received signal in most wireless applications. Therefore, a preamplifier is usually placed close to the main sensor to reduce the effects of interferences and to amplify the received signal without degrading the signal-to-noise ratio. Although different designs have been optimized and tested in the literature, all of them are using larger than 100 nm technologies which have led to a modest performance in terms of equivalent noise charge (ENC), gain, power consumption, and response time. In contrast, we consider in this paper a new amplifier design technology trend and move towards sub 100 nm to enhance its performance. In this work, we use a pre-well-known design of a preamplifier circuit and rebuild it using 45 nm CMOS technology, which is made for the first time in such circuits. Performance evaluation shows that our proposed scaling technology, compared with other scaling technology, extremely reduces ENC of the circuit by more than 95%. The noise spectral density and time resolution are also reduced by 25% and 95% respectively. In addition, power consumption is decreased due to the reduced channel length by 90%. As a result, all of those enhancements make our proposed circuit more suitable for medical and wireless devices.</p>

scholarly journals -81dB PSRR regulated cascode fully MOS bandgap reference for power management in RF energy harvesting systems

2019 ◽  
Vol 14 (2) ◽  
pp. 706
Author(s):  
M. K.Zulkalnain ◽  
N. A.Kamsani ◽  
R. M.Sidek ◽  
F. Z.Rokhani ◽  
S. J.Hashim ◽  
...  
Keyword(s):  
Power Management ◽  
Clean Energy ◽  
Cmos Technology ◽  
Low Noise ◽  
Noise Power ◽  
Threshold Region ◽  
Bandgap Reference ◽  
Main Challenge ◽  
Harvesting Systems ◽  
Iot Devices

In the midst of technological advance where everything is connected via the internet, IoT is emerging as a potential solution to everything, ranging from health wearables to smart city. An RFEH power management system has promising benefits that could further improve the powering of IoT devices as it has potential for clean energy as well as other advantages which consists of a rectifier, bandgap reference and LDO as the main core. However, the main challenge is supplying clean and low noise power to sensitive circuits such as low power sensors, VCOs and PLLs. A high PSRR bandgap reference that rejects noise at the power supply is needed so that the circuitry powered by RFEH systems would be able to function properly. This paper presents a bandgap with MOS PTAT and CTAT extraction achieving a PSRR of -81dB at a V<sub>ref</sub> of 0.415V was designed on 130nm CMOS technology targeting IoT RFEH devices that operate at sub-threshold and near-threshold region that exhibits improvement over the base design.

An Ultra-wideband Low Noise Amplifier Design in 0.13-um CMOS Technology

2021 ◽  
Author(s):  
Dongwei Pang ◽  
Yongfeng Gui ◽  
Shiwei Wu ◽  
Xiaohu Wang ◽  
Wang Gang
Keyword(s):  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Amplifier Design ◽  
Noise Amplifier
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