scholarly journals Hybrid Memristor–CMOS Implementation of Combinational Logic Based on X-MRL

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1018
Author(s):  
Khaled Alhaj Ali ◽  
Mostafa Rizk ◽  
Amer Baghdadi ◽  
Jean-Philippe Diguet ◽  
Jalal Jomaah

A great deal of effort has recently been devoted to extending the usage of memristor technology from memory to computing. Memristor-based logic design is an emerging concept that targets efficient computing systems. Several logic families have evolved, each with different attributes. Memristor Ratioed Logic (MRL) has been recently introduced as a hybrid memristor–CMOS logic family. MRL requires an efficient design strategy that takes into consideration the implementation phase. This paper presents a novel MRL-based crossbar design: X-MRL. The proposed structure combines the density and scalability attributes of memristive crossbar arrays and the opportunity of their implementation at the top of CMOS layer. The evaluation of the proposed approach is performed through the design of an X-MRL-based full adder. The design is presented with its layout and corresponding simulation results using the Cadence Virtuoso toolset and CMOS 65nm process. The comparison with a pure CMOS implementation is promising in terms of the area, as our approach exhibits a 44.79% area reduction. Moreover, the combined Energy.Delay metric demonstrates a significant improvement (between ×5.7 and ×31) with respect to the available literature.

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Ismail Gassoumi ◽  
Lamjed Touil ◽  
Abdellatif Mtibaa

The continuous market demands for high performance and energy-efficient computing systems have steered the computational paradigm and technologies towards nanoscale quantum-dot cellular automata (QCA). In this paper, novel energy- and area-efficient QCA-based adder/subtractor designs have been proposed. First, a QCA-based 3-input XOR gate is designed and then a full adder and a full subtractor are realized. The power consumption of the proposed design was tested via the QCAPro estimator tool with different kind of energy (γ = 0.5 Ek, γ = 1.0 Ek, and γ = 1.5 Ek) at temperature T = 2 in Kelvin. QCADesigner 2.0.03 software was applied to evaluate the simulation results of the proposed designs. The proposed design has better complexity than the conventional designs in terms of cell count, area, and power dissipation.


Author(s):  
Diksha Siddhamshittiwar

Static power reduction is a challenge in deep submicron VLSI circuits. In this paper 28T full adder circuit, 14T full adder circuit and 32 bit power gated BCD adder using the full adders respectively were designed and their average power was compared. In existing work a conventional full adder is designed using 28T and the same is used to design 32 bit BCD adder. In the proposed architecture 14T transmission gate based power gated full adder is used for the design of 32 bit BCD adder. The leakage supremacy dissipated during standby mode in all deep submicron CMOS devices is reduced using efficient power gating and multi-channel technique. Simulation results were obtained using Tanner EDA and TSMC_180nm library file is used for the design of 28T full adder, 14T full adder and power gated BCD adder and a significant power reduction is achieved in the proposed architecture.


Adder Is Basic Unit For Any Digital System, Dsp And Microprocessor. The Main Issue In Design High Speed Full Adder Cell With The Low Power Dissipation. As We Know Cmos Technology Used For Vlsi Designing Cmos Has Many Drawbacks As High Power Short Channel Effect Etc. Then Cntfet (Carbon Nanotube Field Effect Transistor) Has Been Developed Which Has Same Structure As Cmos. The Difference Between Structure Of Cmos And Cntfet Is Their Channel. In Cntfet Channel Is Replaced By Carbon Nanotube. In This Paper We Compare Full Adder Circuit Using Cntfet With Gdi Technique And Cmos Implementation Of Adder Which Gdi Technique. Gdi Technique Is Used For Speed And Power Optimization In Digital Circuit. This Can Also Reduce The Count Of Transistor Which Affects The Size Of Device.


Author(s):  
Sarah L. Harris ◽  
David Harris

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