scholarly journals Electromechanical Coupling Parameter Identification for Flexible Conductor Wire Interconnection Considering Interaction Effect in Microwave Circuits

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 464
Author(s):  
Jun Tian ◽  
Congsi Wang ◽  
Shaoyi Liu ◽  
Song Xue ◽  
Le Zhang ◽  
...  

With the huge requirement of high frequency, multi-function and high reliability, the quality of microwave circuit interconnection has become an important factor that significantly affects the improvement of microwave electronic system performance. This paper has presented an identification method for flexible conductor wire interconnection (FCWI) electromechanical coupling parameters in microwave circuits with the consideration of their interaction effect. First, a parametric characterization cascade function has been proposed to design the FCWI, and consequently, a three-dimensional electromagnetic structure model of FCWI has been developed and verified. In order to identify the electromechanical coupling parameters of the flexible interconnection considering the interaction effect effectively, this paper has used the range multi-objective function to select the optimal level of the configuration parameter of the flexible interconnection that affects the signal transmission loss. Based on the variance analysis and range analysis of the experimental results, the comprehensive judgment criterion of electromechanical coupling parameters of flexible interconnection can be defined, and therefore, the calculation of electromechanical coupling degree can be derived and the electromechanical coupling property identification of flexible interconnection has been obtained. An example has been used afterwards to verify the accuracy of the proposed method. The method proposed in this paper can be a promising tool for microwave circuit comprehensive design and the optimization of its interconnection, considering both mechanical reliability and electrical performance.

Author(s):  
Kevin Moody ◽  
Nick Stukan

In this paper will focus on the comprehension of System-in-Package (SiP) with embedded active and passive components integration will be described. Embedding of semiconductor chips into substrates provides many advantages that have been noted. It allows the smallest package form-factor with high degree of miniaturization through sequentially stacking of multiple layers containing embedded devices that are optimized for electrical performance with short and geometrically well controlled copper interconnects. In addition, the embedding gives a homogeneous mechanical environment of the chips, resulting in good reliability at system level. Furthermore, embedded technology is an excellent resolution to Power management challenges dealing with new device technologies (Si, GaS, GaN) and optimization on the thermal dissipation with improved efficiency. Embedded technology comes with many challenges in 2019, primarily design for manufacturability (DFM) and maturity. Customers are looking for better-performance capability and pricing normally that means same or lower than die free package cost (DFPC) comparison. This paper will discuss the challenges bring to market the Embedded SIP Modules for next-GEN Heterogeneous “POWER-Devices” Today, the embedded process is being developed by printed circuit board (PCB) manufacturers creating a new supply chain, bringing new players into the semiconductor industry. This new supply chain comes along with new business models. As a result of the increasing interest in implementing embedding technologies, ACCESS Semiconductors in China is committed to be a leader in the adaptation of embedding technologies, with over 10-yrs mature coreless technology and proved design rules for low profile dimensions with seamless Ti/Cu sputtering and Cu pillar interconnect giving advantages in both electrical & power performance. ACCESS Patented “Via-in-Frame” technology provides High Reliability (MSL1, PCT, BHAST) at Cost Effective in high panel utilization for HVM, using standard substrate/PCB known material sets, no need for wafer bumping/RDL, over-mold or under-fill cost adders. ACCESS Semiconductors is currently in HVM on single die 2L, and LVM on multi-devices actives/passives 4L SiP construction both platforms are driven from the power market segment. In-development on Die Last & Frameless (MeSiP) platforms utilizing hybrid technology (mSAP) and Photo Imageable Dielectric (PID) materials for cost down solutions in HVM by Q1FY2020. Also, ACCESS Semiconductors total turn-key solutions will include front-of-line (FOL) and end-of-line (EOL) capability from wafer handling, back-grinding, and dicing with KGD traceability thru the embedded chip process, frame/strip singulation, FT, marking pack & ship providing additional 30% cost reduction in the future. Here's an illustration of Embedded Technology Roadmap and Product Platforms.


Aerospace ◽  
2020 ◽  
Vol 7 (7) ◽  
pp. 94
Author(s):  
Juan J. Rojas ◽  
Yamauchi Takashi ◽  
Mengu Cho

The lean satellite approach requires aggressive measures for cutting development time and resource utilization; therefore, the power system should be simple, with a low part count, high reliability, and good electrical performance. The fully-regulated bus direct energy transfer (FRDET) architecture is considered the most common solution for big satellites; however, it is rarely used in lean satellite designs because of its complexity and the lack of commercial off-the-shelf solutions. Based on this, a new implementation of the FRDET architecture was proposed, prototyped, and evaluated. The system was based on a bidirectional converter that charges and discharges the battery while maintaining the bus voltage regulation. The system was evaluated by comparing it with the prevailing architectures in the field, in terms of efficiency and average harvested solar power per orbit. The proposed system was superior in both aspects which made it more suitable for its application in lean satellite designs.


2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Preeti Wanti Srivastava ◽  
Manisha Manisha ◽  
Manju Agarwal

PurposeDegradation measurement of some products requires destructive inspection; that is, the degradation of each unit can be observed only once. For example, observation on the mechanical strength of interconnection bonds or on the dielectric strength of insulators requires destruction of the unit. Testing high-reliability items under normal operating conditions yields a small amount of degradation in a reasonable length of time. To overcome this problem, the items are tested at higher than normal stress level – an approach called an accelerated destructive degradation test (ADDT). The present paper deals with formulation of constant-stress ADDT (CSADDT) plan with the test specimens subject to stress induced by temperature and voltage.Design/methodology/approachThe stress–life relationship between temperature and voltage is described using Zhurkov–Arrhenius model. The fractional factorial experiment has been used to determine optimal number of stress combinations. The product's degradation path follows Wiener process. The model parameters are estimated using method of maximum likelihood. The optimum plan consists in finding out optimum allocations at each inspection time corresponding to each stress combination by using variance optimality criterion.FindingsThe method developed has been explained using a numerical example wherein point estimates and confidence intervals for the model parameters have been obtained and likelihood ratio test has been used to test for the presence of interaction effect. It has been found that both the temperature and the interaction between temperature and voltage influence the quantile lifetime of the product. Sensitivity analysis is also carried out.Originality/valueMost of the work in the literature on the design of ADDT plans focusses on only a single stress factor. An interaction exists among two or more stress factors if the effect of one factor on a response depends on the levels of other factors. In this paper, an optimal CSADDT plan is studied with one main effect and one interaction effect. The method developed can help engineers study the effect of elevated temperature and its interaction with another stress factor, say, voltage on quantile lifetime of a high-reliability unit likely to last for several years.


2019 ◽  
Vol 2019 ◽  
pp. 1-12
Author(s):  
Song Jiang ◽  
Wei Li ◽  
Lianchao Sheng ◽  
Jiajun Chen ◽  
Min Li

The nonlinear torsional vibration and instability oscillation caused by nonlinear damping in the shearer electromechanical coupling cutting transmission system in shearer driven by the permanent magnet synchronous motor (PMSM) is investigated in this paper. The electromechanical coupling transmission system in the shearer is equivalent to a concentrated mass model for the purpose of establishing the system dynamic model by the Lagrange–Maxwell equation. Then, the Routh–Hurwitz criterion is used to determine the torsional vibration critical point and stability region for the Hopf bifurcation for the cutting transmission system. According to the Routh–Hurwitz stability criterion, the Hopf bifurcation type and the effect of the supercritical Hopf bifurcation in the torsional vibration of the cutting transmission system are analyzed. Furthermore, based on the washout filter, the Hopf bifurcation controller is designed for suppressing the transmission system’s large vibration amplitude and unstable oscillation. In addition, the influences of the linear gain and nonlinear gain on the bifurcation point and the limit cycle amplitude are discussed. Finally, the numerical simulation results indicate the effectiveness of the designed controller. The research achievements can provide a theoretical basis for design or optimize the cutting transmission system of high-reliability shearer driven by PMSM.


2017 ◽  
Vol 863 ◽  
pp. 266-272
Author(s):  
Kai Yu Hu ◽  
Kai Wang ◽  
Pei Zhang Wu ◽  
Yi Jiang

Abstract.In order to ensure higher accuracy and better electrical performance of large antennas in future,this paper does some research for deformation of antenna’s reflector:modeling for 25m antenna and reappearing deformation when elevation changes every 15° just considering gravity by using ANSYS.Using results of simulation obtains deformation error curves with elevation changes, creates the conditions for compensating distortion and has a certain value. By using Ruze formula, deeply studies the regular about antenna’s electrical performance influenced by deformation because of elevation changes,obtains meaningful data and tables of relationship between elevation and parameters of electrical performance in nine bands of 25m antenna.It finds out that when working in high-frequency band, efficiency and gain loss of antenna will be more affected by elevation angle changes.Finally creates conditions for optimizing antenna parameters and performing high reliability tasks such as deep space exploration and aerospace communication.


Materials ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1406 ◽  
Author(s):  
Yu Fan ◽  
Manuel Collet ◽  
Mohamed Ichchou ◽  
Olivier Bareille ◽  
Lin Li

A novel metrics termed the ‘wave electromechanical coupling factor’ (WEMCF) is proposed in this paper, to quantify the coupling strength between the mechanical and electric fields during the passage of a wave in piezoelectric composites. Two definitions of WEMCF are proposed, leading to a frequency formula and two energy formulas for the calculation of such a factor. The frequency formula is naturally consistent with the conventional modal electromechanical coupling factor (MEMCF) but the implementation is difficult. The energy formulas do not need the complicated wave matching required in the frequency formula, therefore are suitable for computing. We demonstrated that the WEMCF based on the energy formula is consistent with the MEMCF, provided that an appropriate indicator is chosen for the electric energy. In this way, both the theoretical closure and the computational feasibility are achieved. A numerical tool based on the wave and finite element method (WFEM) is developed to implement the energy formulas, and it allows the calculation of WEMCF for complex one-dimensional piezoelectric composites. A reduced model is proposed to accelerate the computing of the wave modes and the energies. The analytical findings and the reduced model are numerically validated against two piezoelectric composites with different complexity. Eventually an application is given, concerning the use of the shunted piezoelectric composite for vibration isolation. A strong correlation among the WEMCF, the geometric parameters and the energy transmission loss are observed. These results confirm that the proposed WEMCF captures the physics of the electromechanical coupling phenomenon associated with the guided waves, and can be used to understand, evaluate and design the piezoelectric composites for a variety of applications.


2011 ◽  
Vol 70 ◽  
pp. 393-398 ◽  
Author(s):  
Aurelien Maurel-Pantel ◽  
E. Baquet ◽  
Jerome Bikard ◽  
Noelle Billon

Heat dissipation during mechanical testing can disturb experimental characterisation of polymers. In this work it is demonstrated that these effects are not limited to extreme loading conditions such as impacts. A visco-hyperelastic, visco-plastic constitutive model is proposed that accounts for thermo mechanical coupling in a fully 3D thermodynamics approach. Strain-rate and temperature dependencies are coupled using a concept close to the well known time-temperature superposition principle. Constitutive and coupling parameters are identified at the same time using an inverse analysis protocol. An experimental data base is generated for mechanical measurements at different temperatures and strain rates but also for temperatures during tests measured using IR technology. Such a protocol allows investigation on the strain-rate sensitivity in a much more relevant manner than classical one and the value of the so-called Taylor-Quinney coupling parameter is discussed.


2022 ◽  
Vol 14 (2) ◽  
pp. 863
Author(s):  
Chenchen Li ◽  
Shifu Liu ◽  
Hongduo Zhao ◽  
Yu Tian

To advance the development of piezoelectric energy harvesters, this study designed and manufactured bridge-unit-based and pile-unit-based piezoelectric devices. An indoor material testing system and accelerated pavement test equipment were used to test the electrical performance, mechanical performance, and electromechanical coupling performance of the devices. The results showed that the elastic modulus of the pile structure device was relatively higher than that of the bridge structure device. However, the elastic modulus of the two devices should be improved to avoid attenuation in the service performance and fatigue life caused by the stiffness difference. Furthermore, the electromechanical conversion coefficients of the two devices were smaller than 10% and insensitive to the load magnitude and load frequency. Moreover, the two devices can harvest 3.4 mW and 2.6 mW under the wheel load simulated by the one-third scale model mobile load simulator, thus meeting the supply requirements of low-power sensors. The elastic modulus, electromechanical conversion coefficients, and electric performance of the pile structure device were more reliable than those of the bridge structure device, indicating a better application prospect in road engineering.


2014 ◽  
Vol 15 (2) ◽  
Author(s):  
Aliza Aini Md Ralib ◽  
Anis Nurashikin Nordin

ABSTRACT: Continuous advancement in wireless technology and silicon microfabrication has fueled exciting growth in wireless products. The bulky size of discrete vibrating mechanical devices such as quartz crystals and surface acoustic wave resonators impedes the ultimate miniaturization of single-chip transceivers. Fabrication of acoustic wave resonators on silicon allows complete integration of a resonator with its accompanying circuitry.  Integration leads to enhanced performance, better functionality with reduced cost at large volume production. This paper compiles the state-of-the-art technology of silicon compatible acoustic resonators, which can be integrated with interface circuitry. Typical acoustic wave resonators are surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators.  Performance of the resonator is measured in terms of quality factor, resonance frequency and insertion loss. Selection of appropriate piezoelectric material is significant to ensure sufficient electromechanical coupling coefficient is produced to reduce the insertion loss. The insulating passive SiO2 layer acts as a low loss material and aims to increase the quality factor and temperature stability of the design. The integration technique also is influenced by the fabrication process and packaging.  Packageless structure using AlN as the additional isolation layer is proposed to protect the SAW device from the environment for high reliability. Advancement in miniaturization technology of silicon compatible acoustic wave resonators to realize a single chip transceiver system is still needed. ABSTRAK: Kemajuan yang berterusan dalam teknologi tanpa wayar dan silikon telah menguatkan pertumbuhan yang menarik dalam produk tanpa wayar. Saiz yang besar bagi peralatan mekanikal bergetar seperti kristal kuarza menghalang pengecilan untuk merealisasikan peranti cip. Silikon serasi  gelombang akustik resonator mempunyai potensi yang besar untuk menggantikan unsur-unsur diskret kerana keupayaan untuk mengintegrasikan dengan litar yang disertakan itu. Integrasi ini membawa kepada peningkatan prestasi, fungsi yang lebih baik dengan pengurangan kos pada pengeluaran jumlah yang besar. Oleh itu, Karya ini mengkaji silikon resonator akustik yang serasi, yang bersepadu dengan muka litar untuk membolehkan integrasi yang lengkap. Resonator gelombang akustik yang digunakan adalah gelombang permukaan akustik ( SAW ) dan gelombang akustik pukal ( BAW ) resonator . Kriteria penting untuk menilai prestasi resonator seperti faktor kualiti, frekuensi resonans dan kehilangan sisipan juga digariskan dalam setiap kerja sebelumnya. Pemilihan bahan piezoelektrik yang sesuai adalah penting untuk memastikan pekali gandingan elektromekanik yang mencukupi dihasilkan untuk mengurangkan kehilangan sisipan. Lapisan tambahan pasif SiO2   yang bertindak sebagai bahan rendah sisipan dipercayai meningkatkan faktor kualiti dan kestabilan suhu reka bentuk. Teknik integrasi juga dipengaruhi oleh proses fabrikasi dan pembungkusan. Struktur tanpa pembungkusan menggunakan AlN sebagai lapisan pengasingan tambahan itu dicadangkan untuk melindungi peranti SAW dari persekitaran untuk kebolehpercayaan yang tinggi. Banyak lagi kemajuan perlu dilakukan dalam pengecilan silikon serasi resonator gelombang akustik untuk merealisasikan sistem cip transceiver tunggal.KEYWORDS: RF-MEMS; piezoelectric; resonator; surface acoustic wave (SAW);bulk acoustic wave (BAW); FBAR


2021 ◽  
Author(s):  
D. Fishmana ◽  
L. Neemana ◽  
N. Meira ◽  
Y. Orena ◽  
G. Baraka ◽  
...  

Abstract As semiconductor device dimensions scale down, process variation impact on reliability becomes increasingly severe. This trend stems from the high-reliability requirements typical for advanced system applications, the narrowing process margins and the high sensitivity of devices to material and dimensional variations. At the process level, many deviations from nominal conditions can degrade the devices' reliability. Examples are induced charge traps in the various types of memory cells, electrical performance inhibitors due to lattice defects or poor stress management and poor data retention due to contamination by killer elements. We claim that monitoring and correcting deviations throughout the fabrication process provides an effective approach for preventing reliability failures. By restricting deviations below specific threshold levels and screening out reliability and End Of line (EOL) related parameters, eventual device reliability can be safeguarded. This paper addresses the relationship between various process parameters and reliability, and reviews the enablers of preventive, early-detection inline metrology in the fab.


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