scholarly journals Breakdown Behavior of GaAs PCSS with a Backside-Light-Triggered Coplanar Electrode Structure

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 357
Author(s):  
Xu Chu ◽  
Tao Xun ◽  
Langning Wang ◽  
Jinliang Liu ◽  
Hanwu Yang ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Bias Voltage ◽  
The Body ◽  
Electrode Structure ◽  
Current Channel ◽  
Surface Flashover ◽  
Competitive Relationship ◽  
Semiconductor Switch ◽  
Coplanar Electrodes ◽  
Extrinsic Absorption

The competitive relationship between the surface flashover of the coplanar electrodes and the body current channel was investigated. Breakdown behavior of GaAs photo-conductive semiconductor switch (PCSS) with a backside-light-receiving coplanar electrode structure was studied in this paper. GaAs PCSS was triggered by the laser pulse with an extrinsic absorption wavelength of 1064 nm. Special insulating construction was designed for GaAs PCSS, while the surface of the electrodes was encapsulated with transparent insulating adhesive. Our first set of experiments was at a bias voltage of 8 kV, and the surface flashover breakdown of GaAs PCSS was observed with 10 Hz triggering laser pulse. In the second experiment, at a bias voltage of 6 kV, the body current channel breakdown appeared on the backside of the GaAs PCSS. Compared with these results, the existence of a competitive relationship between the surface flashover breakdown and the body current channel breakdown of the GaAs PCSS was confirmed. When the bias voltage is set within a certain range (just reaching avalanche mode), GaAs PCSS with a backside-light-receiving coplanar electrode structure will undergo the body current channel breakdown. This finding is also consistent with the simulation results.

scholarly journals Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor Switch

2019 ◽  
Vol 9 (2) ◽  
pp. 358
Author(s):  
Wei Shi ◽  
Lei Yang ◽  
Lei Hou ◽  
Zenan Liu ◽  
Nuo Xu ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Femtosecond Laser ◽  
Femtosecond Laser Pulse ◽  
Pulse Energy ◽  
Streak Camera ◽  
Experimental Results ◽  
Good Stability ◽  
Semiconductor Switch

In this paper, the positive and negative symmetric pulses with a fast rising edge were generated by a GaAs photoconductive semiconductor switch (PCSS). When the GaAs PCSS was biased at 2.0 kV and triggered by a femtosecond laser pulse with a pulse energy of 97.5 J, the peak voltages of the positive and negative pulses were 1.313 kV and 1.329 kV, respectively, and the rise times were 174 ps and 164 ps, respectively. Moreover, the GaAs PCSS presents good stability. The experimental results show that GaAs PCSSs can meet the requirement of a femtosecond streak camera.

scholarly journals The discharge initiation in vacuum gap by moderate intensity optical range radiation

2021 ◽  
Vol 9 (4) ◽  
pp. 325-336
Author(s):  
Sergei Davydov ◽  
Alexander Dolgov ◽  
Alekcey Katorov ◽  
Vladislav Revazov ◽  
Rustam Yakubov
Keyword(s):  
Laser Pulse ◽  
Pulse Energy ◽  
Laser Pulse Energy ◽  
Moderate Intensity ◽  
Electrode Erosion ◽  
Optical Range ◽  
Current Channel ◽  
Dynamical Parameters ◽  
Vacuum Gap ◽  
Laser Pulse Interaction

The hypothesis of discharge initiation in vacuum gap by optical range radiation based on previously obtained experimental data. During the laser pulse interaction with electrode erosion products the glow discharge has ignited. In result of ioniza-tion-overheating instability the discharge has had current channel contraction and has transferred to arc. The dependences of material of target thermo dynamical parameters on the minimal and threshold laser pulse energy have demonstrated. The threshold laser pulse energy – the energy which enough to effective impact on the laser plasma.

scholarly journals Some features of discharge initiation in vacuum gap by optical range radiation

2021 ◽  
pp. 30-36
Keyword(s):  
Experimental Data ◽  
Glow Discharge ◽  
Laser Pulse ◽  
Pulse Energy ◽  
Laser Pulse Energy ◽  
Optical Range ◽  
Current Channel ◽  
Dynamical Parameters ◽  
Vacuum Gap ◽  
Laser Pulse Interaction

The hypothesis of discharge initiation in vacuum gap by optical range radiation based on pre-viously obtained experimental data. During the laser pulse interaction withelectrode erosionproductsthe glow discharge has ignited. In result of ionization-overheating instability the dis-charge has had current channel contraction and has transferred to arc. Thedependences ofmaterial of target thermo dynamical parameters on theminimal and thresholdlaser pulse en-ergyhave demonstrated. The threshold laser pulse energy –the energy which enough to effec-tive impact on the laser plasma.

Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch

2013 ◽  
Vol 38 (13) ◽  
pp. 2330 ◽  
Author(s):  
Wei Shi ◽  
Huaimeng Gui ◽  
Lin Zhang ◽  
Cheng Ma ◽  
Mengxia Li ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Pulse Width ◽  
Laser Pulse Width ◽  
Semiconductor Switch

Observation of Random Telegraphic Noise in Large Area a-Si:H/a- Si1−x, Nx:H Double Barrier Structures

1989 ◽  
Vol 149 ◽  
Author(s):  
R. Arce ◽  
L. Ley
Keyword(s):  
Cross Section ◽  
Bias Voltage ◽  
Power Spectra ◽  
Large Area ◽  
Double Barrier ◽  
Current Channel ◽  
Thermally Activated ◽  
Switching Times ◽  
Cross Section Area ◽  
Section Area

ABSTRACTRandom Telegraphic Noise (RTN) with an amplitude of about 1% has been observed in the current through a-Si:H/a-Si1−xNx.:H double barrier structures. The area of the devices, 0.25 mm2, is five orders of magnitude larger than the area of the devices where RTN has previously been observed. The power spectra of the noise can be fitted by a superposition of Lorentzians from which average switching times are deduced. The switching times are thermally activated with activation energies between 0.2 and 0.6 eV and depend on bias voltage. Assuming that the current through these structures is confined to microchannels of cross section area < lμm2 the RTN and its characteristics are explained by the random charging and discharging of individual traps placed in the vicinity of the current channel.

Optimization of the Body Bias Voltage Set (BBVS) for Flex Power FPGA

2007 ◽  
Vol E90-D (12) ◽  
pp. 1947-1955 ◽  
Author(s):  
T. KAWANAMI ◽  
M. HIOKI ◽  
Y. MATSUMOTO ◽  
T. TSUTSUMI ◽  
T. NAKAGAWA ◽  
...  
Keyword(s):  
Bias Voltage ◽  
The Body ◽  
Body Bias
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