scholarly journals Thermodynamic Analysis of the V-Shaped Area of High Pressure and High Temperature in Cubic Boron Nitride Synthesis with Li3N as a Catalyst

Entropy ◽  
2014 ◽  
Vol 16 (2) ◽  
pp. 912-920 ◽  
Author(s):  
Bin Xu ◽  
Mei-Zhe Lv ◽  
Hong-Mei Yang ◽  
Zhen-Xing Wen
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Thermodynamic Analysis ◽  
Cubic Boron Nitride

scholarly journals Thermodynamic Analysis about Nucleation and Growth of Cubic Boron Nitride Crystals in the hBN-Li3N System under High Pressure and High Temperature

Entropy ◽  
2015 ◽  
Vol 17 (2) ◽  
pp. 755-762 ◽  
Author(s):  
Xiao-Fei Guo ◽  
Bin Xu ◽  
Wen Zhang ◽  
Mei-Zhe Lv ◽  
Hong-Mei Yang ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Thermodynamic Analysis ◽  
Cubic Boron Nitride ◽  
Nucleation And Growth

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

scholarly journals Superhard Superconductor Composites Obtained by Sintering of Diamond, c-BN and C60 Powders with Superconductors

2006 ◽  
Vol 61 (12) ◽  
pp. 1541-1546 ◽  
Author(s):  
Gennadi A. Dubitsky ◽  
Vladimir D. Blank ◽  
Sergei G. Buga ◽  
Elena E. Semenova ◽  
Nadejda R. Serebryanaya ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Critical Temperature ◽  
Boron Nitride ◽  
Synthetic Diamond ◽  
Cubic Boron Nitride ◽  
High Pressure High Temperature ◽  
Diamond Powders

Superhard superconducting samples with a critical temperature of TC = 10.5 - 12.6 K were obtained by high-pressure / high-temperature sintering of synthetic diamond powders coated with a niobium film and in 50% - 50% composition with superhard C60 fullerene. Superhard superconductors with TC = 9.3 K were obtained when diamond and molybdenum powders were sintered at a pressure of 7.7 GPa and a temperature of 2173 K. Superconducting samples with TC = 36.1 - 37.5 K have been obtained in the systems diamond-MgB2 and cubic boron nitride-MgB2.

High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure

Science ◽  
1987 ◽  
Vol 238 (4824) ◽  
pp. 181-183 ◽  
Author(s):  
O. MISHIMA ◽  
J. TANAKA ◽  
S. YAMAOKA ◽  
O. FUKUNAGA
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Junction Diode
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