scholarly journals ZnO as a Functional Material, a Review

Crystals ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 505 ◽  
Author(s):  
Michał A. Borysiewicz
Keyword(s):  
Wide Band ◽  
Future Research ◽  
High Electron ◽  
Functional Material ◽  
Bandgap Engineering ◽  
Wide Band Gap ◽  
Current State ◽  
Main Development ◽  
The Many ◽  
P Type

Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility of bandgap engineering, the possibility to dope it into high electron concentrations, or with many transition or rare earth metals, as well as the many structures it can form, all explain the intensive interest and broad applications. This review aims to showcase ZnO as a very versatile material lending itself both to bottom-up and top-down fabrication, with a focus on the many devices it enables, based on epitaxial structures, thin films, thick films, and nanostructures, but also with a significant number of unresolved issues, such as the challenge of efficient p-type doping. The aim of this article is to provide a wide-ranging cross-section of the current state of ZnO structures and technologies, with the main development directions underlined, serving as an introduction, a reference, and an inspiration for future research.

Wide band gap and p-type conductive Cu-Nb-O films

2011 ◽  
Vol 5 (4) ◽  
pp. 153-155 ◽  
Author(s):  
Seiji Yamazoe ◽  
Shunsuke Yanagimoto ◽  
Takahiro Wada
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

scholarly journals A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

2009 ◽  
Vol 94 (20) ◽  
pp. 202103 ◽  
Author(s):  
Min-Ling Liu ◽  
Fu-Qiang Huang ◽  
Li-Dong Chen ◽  
I-Wei Chen
Keyword(s):  
Band Gap ◽  
Thermoelectric Material ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

scholarly journals GaN Based p-n Structures Grown on SiC Substrates

1996 ◽  
Vol 1 ◽  
Author(s):  
V.A. Dmitriev
Keyword(s):  
Band Gap ◽  
Bright Light ◽  
Wide Band ◽  
Injection Laser ◽  
Light Emitters ◽  
Wide Band Gap ◽  
High Quality ◽  
P Type

Wide band gap nitrides(InN, GaN, AlN) have been considered promising optoelectronics materials for many years [1]. Recently two main technological problems in the nitrides were overcome: (1)high quality layers has been grown on both sapphire and SiC substrates and(2) p-type GaN and AlGaN material has been obtained. These achievements resulted in the fabrication of bright light emitters in the violet, blue and green spectral regions [2].First injection laser has been demonstrated [3]. This paper reviews results obtained over the last few years on nitride p-n junctions, particularly on GaN based p-n junctions grown on SiC substrates. We will consider GaN p-n junctions, AlGaN p-n junctions, GaN and AlGaN p-i-n structures, and, finally, GaN/SiC p-n structures.

Research on the Preparation Technology of GaN Ultraviolet Photoelectric Detector

2013 ◽  
Vol 717 ◽  
pp. 205-209 ◽  
Author(s):  
Yuan Yuan Sun ◽  
Xi He Zhang ◽  
Qiu Rui Jia ◽  
Zheng Li ◽  
Shi Bo Liu
Keyword(s):  
Optoelectronic Devices ◽  
Wide Band ◽  
Semiconductor Materials ◽  
Wide Band Gap ◽  
Preparation Technology ◽  
Optimization Of Parameters ◽  
Growth Method ◽  
P Type ◽  
Growth Quality ◽  
Gan Film

GaN semiconductor was one of the most promising semiconductor materials with direct wide band gap transition. It was regarded as one of the most desirable materials to prepare short wavelength optoelectronic devices for the good optoelectronic properties and excellent mechanical behavior. In this paper, n and p-type GaN films were prepared on Al2O3 substrates by MOCVD. Through the optimization of parameters, we obtained effective in doped Mg and carrier concentration for 1019. MSM structural ultraviolet photoelectric devices were prepared on GaN film by two step epitaxy growth method. The highest transmittance and best epitaxial growth quality has been gained at 570°C for buffer layer of the samples.

Computational Prediction and Experimental Realization of p-Type Carriers in the Wide-Band-Gap Oxide SrZn1–xLixO2

2018 ◽  
Vol 57 (19) ◽  
pp. 11874-11883 ◽  
Author(s):  
Christos A. Tzitzeklis ◽  
Jyoti K. Gupta ◽  
Matthew S. Dyer ◽  
Troy D. Manning ◽  
Michael J. Pitcher ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Computational Prediction ◽  
Wide Band Gap ◽  
Experimental Realization ◽  
P Type

Theoretical and experimental studies on wide-band-gap p-type conductive BaCuSeF and related compounds

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KC07 ◽  
Author(s):  
Hiroshi Sakakima ◽  
Mikihiko Nishitani ◽  
Koichi Yamamoto ◽  
Takahiro Wada
Keyword(s):  
Band Gap ◽  
Experimental Studies ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type ◽  
Related Compounds

p-type conductivity in wide-band-gap BaCuQF (Q=S,Se)

2003 ◽  
Vol 82 (17) ◽  
pp. 2814-2816 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Janet Tate ◽  
Sangmoon Park ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Type Conductivity ◽  
P Type

P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide

2009 ◽  
Vol 10 (5) ◽  
pp. 932-938 ◽  
Author(s):  
Michael Kröger ◽  
Sami Hamwi ◽  
Jens Meyer ◽  
Thomas Riedl ◽  
Wolfgang Kowalsky ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Band Gap ◽  
Transition Metal Oxides ◽  
Molybdenum Trioxide ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type
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