scholarly journals CuZnSn(SxSe1-x)4 Solar Cell Prepared by the Sol-Gel Method Following a Modified Three-Step Selenization Process

Crystals ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 474
Author(s):  
Xunan Shen ◽  
Chengchun Tang ◽  
Chao Zhang ◽  
Guanda Li ◽  
Yue Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Short Circuit ◽  
Sol Gel ◽  
Secondary Phases ◽  
Photovoltaic Properties ◽  
Solar Cell Performance ◽  
Gel Method ◽  
Sol Gel Method ◽  
Selenization Process

In current work, Cu2ZnSn(S,Se)4 thin films have been prepared by the sol-gel method based on dimethyl sulfoxide solution followed by a modified three-step selenization process. The key process of this method is to divide the Se evaporation and annealing into two different stages: employ a thermal cracking Se source in the Se evaporation stage and an above-atmospheric pressure in the annealing process. The morphological, structural, elemental distributional, and photovoltaic properties of Cu2ZnSn(S,Se)4 thin films prepared with the three-step selenization process were systematically investigated. It was found that through this modified selenization process, the formations of secondary phases (ZnSe, CuSnSe3) and a fine-grain bottom layer, which usually exists in the traditional one-step selenization process, were effectively suppressed. These improvements could further reduce the carrier recombination and improve the solar cell performance. The best solar cell is obtained with a short-circuit current density of 28.16 mA/cm2, open-circuit voltage of 404.91 mV, fill factor of 62.91%, and a power conversion efficiency of 7.17% under air mass 1.5 (100 mW/cm2) illumination.

scholarly journals The Microstructure, Electric, Optical and Photovoltaic Properties of BiFeO3 Thin Films Prepared by Low Temperature Sol–Gel Method

Materials ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1444 ◽  
Author(s):  
Jiaxi Wang ◽  
Li Luo ◽  
Chunlong Han ◽  
Rui Yun ◽  
Xingui Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Band Gap ◽  
Annealing Temperature ◽  
Photovoltaic Effect ◽  
Sol Gel ◽  
Photovoltaic Properties ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method

Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices due to their abnormal photovoltaic effect. However, the current reported efficiency is still low. Hence, it is urgent to develop narrow-band gap ferroelectric materials with strong ferroelectricity by low-temperature synthesis. In this paper, the perovskite bismuth ferrite BiFeO3 (BFO) thin films were fabricated on SnO2: F (FTO) substrates by the sol–gel method and they were rapidly annealed at 450, 500 and 550 °C, respectively. The microstructure and the chemical state’s evolution with annealing temperature were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), and the relationship between the microstructure and electric, optical and photovoltaic properties were studied. The XRD, SEM and Raman results show that a pure phase BFO film with good crystallinity is obtained at a low annealing temperature of 450 °C. As the annealing temperature increases, the film becomes more uniform and has an improved crystallinity. The XPS results show that the Fe3+/Fe2+ ratio increases and the ratio of oxygen vacancies/lattice oxygen decreases with increasing annealing temperature, which results in the leakage current gradually being reduced. The band gap is reduced from 2.68 to 2.51 eV due to better crystallinity. An enhanced photovoltaic effect is observed in a 550 °C annealed BFO film with a short circuit current of 4.58 mA/cm2 and an open circuit voltage of 0.15 V, respectively.

A two step technique to remove the secondary phases in CZTS thin films grown by sol - gel method

2019 ◽  
Vol 45 (8) ◽  
pp. 10876-10881 ◽  
Author(s):  
Arslan Ashfaq ◽  
Jolly Jacob ◽  
N. Bano ◽  
M. Ajaz Un Nabi ◽  
A. Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Secondary Phases ◽  
Gel Method ◽  
Sol Gel Method ◽  
Czts Thin Films

Fe2O3 - TiO2 THIN FILMS PREPARED BY SOL-GEL METHOD

2011 ◽  
Vol 10 (2) ◽  
pp. 187-192 ◽  
Author(s):  
Ramona-Crina Suciu ◽  
Marcela Corina Rosu ◽  
Teofil Danut Silipas ◽  
Emil Indrea ◽  
Violeta Popescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno

Raman study of oriented ZnO thin films deposited by sol–gel method

2008 ◽  
Vol 71 (4) ◽  
pp. 1234-1238 ◽  
Author(s):  
S. Ben Yahia ◽  
L. Znaidi ◽  
A. Kanaev ◽  
J.P. Petitet
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Raman Study

Preparation of Al- and Li-Doped ZnO Thin Films by Sol-Gel Method

2000 ◽  
Vol 181-182 ◽  
pp. 109-112 ◽  
Author(s):  
Shinobu Fujihara ◽  
Chikako Sasaki ◽  
Toshio Kimura
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno
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