scholarly journals Thick Hydride Vapor Phase Heteroepitaxy: A Novel Approach to Growth of Nonlinear Optical Materials

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 393 ◽  
Author(s):  
Vladimir L. Tassev ◽  
Shivashankar R. Vangala
Keyword(s):  
Vapor Phase ◽  
Nonlinear Optical ◽  
Frequency Conversion ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Gradual Change ◽  
Lattice Match ◽  
Nlo Materials ◽  
Laser Sources

At the time when many nonlinear optical (NLO) materials for frequency conversion of laser sources in the mid and long-wave infrared have achieved their fundamental or technological limits, we propose heteroepitaxy as a solution to develop novel NLO materials. Heteroepitaxy, is the most applied method to combine two different materials—by growing one material on another. In this work we show that combining two binary materials in a ternary may significantly improve the NLO properties that are of great importance for the pursued applications. Plus, due to the closer lattice match to the related substrate, a ternary is always a more favorable heteroepitaxial case than the two completely different materials. We also discuss combining different growth methods—one close-to-equilibrium (e.g., hydride vapor phase epitaxy—HVPE) with one far-from-equilibrium (e.g., metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE)) growth processes—to explore new opportunities for the growth of novel heterostructures, including ternary layers with gradual change in composition. The combination of different materials by nature—organics with inorganics—in a hybrid quasi-phase matching (QPM) structure is another topic we briefly discuss, along with some innovative techniques for the fabrication of orientation-patterned (OP) templates, including such that are based on the most universal semiconductor material—Si. Still, the focus in this work is on a series of NLO materials—GaAs, GaP, ZnSe, GaSe, ZnTe, GaN… and some of their ternaries grown with high surface and crystalline quality on non-native substrates and on non-native OP templates using hydride vapor phase epitaxy (HVPE). The grown thick device quality QPM structures were used for further development of high power, compact, broadly tunable frequency conversion laser sources for the mid and longwave infrared with various applications in defense, security, industry, medicine and science.

scholarly journals Photoluminescence and Photoluminescence Excitation Spectroscopy of in Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 946-951
Author(s):  
S. Kim ◽  
X. Li ◽  
J. J. Coleman ◽  
R. Zhang ◽  
D. M. Hansen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Excitation Wavelength ◽  
Photoluminescence Excitation ◽  
Absorption Bands ◽  
Pl Spectra ◽  
Er Doped

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the 1540 nm 4I13/2 → 4I15/2 emission of Er3+ in in situ Er-doped and Erimplanted GaN grown by hydride vapor phase epitaxy (HVPE). The PL and PLE of these two different Er-doped HVPE-grown GaN films are compared with Er-implanted GaN grown by metal organic chemical vapor deposition (MOCVD).In the in situ Er-doped HVPE-grown GaN, the lineshape of the broad PLE absorption bands and the broad PL bands is similar to that in Er-doped glass. The PL spectra of this in situ Er-doped sample are independent of excitation wavelength, unlike the PL of the Er-implanted GaN. These PL spectra are quite different from the site-selective PL spectra observed in the Er-implanted GaN, indicating that the seven different Er3+ sites existing in the Er-implanted MOCVD-grown GaN are not observed in the in situ Er-doped HVPE-grown GaN. Four of the seven different Er3+ sites observed in the Er-implanted MOCVD-grown GaN annealed at 900°C under a flow of N2 are present in the Er-implanted HVPE-grown GaN annealed at 800°C in an NH3/H2 atmosphere.

scholarly journals Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 141 ◽  
Author(s):  
Haixiao Hu ◽  
Baoguo Zhang ◽  
Lei Liu ◽  
Deqin Xu ◽  
Yongliang Shao ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Chemical Vapor ◽  
Growth Stress ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
High Quality ◽  
Continuous Growth

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatments of substrate have been used to promote crystal quality, there is still plenty of room for its improvement, in terms of direct and continuous growth based on the hydride vapor phase epitaxy (HVPE) technique. Here, we report a three-step process that can be used to enhance the quality of GaN crystal by tuning V/III rate during successive HVPE process. In the growth, a metal-organic chemical vapor deposition (MOCVD) grown GaN on sapphire (MOCVD-GaN/Al2O3) was employed as substrate, and a high-quality GaN polyporous interlayer, with successful acquisition, without any additional substrate treatment, caused the growth stress to decrease to 0.06 GPa. Meanwhile the quality of GaN improved, and the freestanding GaN was directly obtained during the growth process.

Visible Light-Emitting Diodes Grown by Plasma Assisted Molecular Beam Epitaxy on Hydride Vapor-Phase Epitaxy GaN Templates and the Development of Dichromatic (Phosphorless) White LEDs

2005 ◽  
Vol 892 ◽  
Author(s):  
Jasper S. Cabalu ◽  
Adrian Williams ◽  
Tai-Chou P. Chen ◽  
Ryan France ◽  
Theodore D. Moustakas
Keyword(s):  
Visible Light ◽  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Nitrogen Plasma ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Rf Plasma ◽  
Organic Chemical ◽  
Light Emitting ◽  
White Leds

AbstractMuch of the work on III-Nitride-based LEDs that has been published and applied commercially has been done using metal-organic chemical vapor deposition (MOCVD) as a method of film growth. We report on the growth and fabrication of visible light emitting diodes, by combining hydride vapor-phase epitaxy (HVPE) and rf plasma-assisted MBE (PAMBE) methods. Thick (∼7 μm to 10 μm) HVPE n+-GaN smooth and textured templates, were used as substrates for the growth of LED structures by rf-PAMBE. The active regions of the LED structures, which consist of InGaN/GaN MQWs, were grown using the pulsed nitrogen plasma technique leading to abrupt well and barrier interfaces as confirmed by x-ray diffraction (XRD) measurements. Using this method, we obtained InGaN/GaN MQWs whose room temperature photoluminescence (PL) spectra have a full width at half maximum (FWHM) of 12 nm (105 meV). Visible LEDs on smooth GaN templates emitting in the blue to green were produced with EL spectrum FWHM as narrow as 27 nm. On the other hand, white LEDs without the use of phosphor have been produced utilizing textured MQWs as the active region, a phenomenon we initially attribute to different incorporation of In on the different QW-planes. The growth and fabrication of these devices was preceded by detailed growth and doping studies of the various layers of the LED structure. These include detailed nucleation studies on (0001) sapphire substrates as well as identification of kinetic factors which lead to good crystalline-quality InGaN alloys and InGaN/GaN MQWs.

Thick orientation-patterned growth of GaP on wafer-fused GaAs templates by hydride vapor phase epitaxy for frequency conversion

2016 ◽  
Vol 60 ◽  
pp. 62-66 ◽  
Author(s):  
Shivashankar Vangala ◽  
Martin Kimani ◽  
Rita Peterson ◽  
Ron Stites ◽  
Michael Snure ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Frequency Conversion ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Patterned Growth

Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
S. Kim ◽  
X. Li ◽  
J. J. Coleman ◽  
R. Zhang ◽  
D. M. Hansen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Excitation Wavelength ◽  
Photoluminescence Excitation ◽  
Absorption Bands ◽  
Pl Spectra ◽  
Er Doped

AbstractPhotoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the 1540 nm 4I13/2 ← 4I15/2 emission of Er3+ in in situ Er-doped and Er-implanted GaN grown by hydride vapor phase epitaxy (HVPE). The PL and PLE of these two different Er-doped HVPE-grown GaN films are compared with Er-implanted GaN grown by metal organic chemical vapor deposition (MOCVD).In the in situ Er-doped HVPE-grown GaN, the lineshape of the broad PLE absorption bands and the broad PL bands is similar to that in Er-doped glass. The PL spectra of this in situ Er-doped sample are independent of excitation wavelength, unlike the PL of the Er-implanted GaN. These PL spectra are quite different from the site-selective PL spectra observed in the Er-implanted GaN, indicating that the seven different Er sites existing in the Er-implanted MOCVD-grown GaN are not observed in the in situ Er-doped HVPE-grown GaN. Four of the seven different Er3+ sites observed in the Er-implanted MOCVD-grown GaN annealed at 900°C under a flow of N2 are present in the Er-implanted HVPE-grown GaN annealed at 800°C in an NH 3/H2 atmosphere.

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

2021 ◽  
Author(s):  
Wondwosen Metaferia ◽  
Anna K. Braun ◽  
John Simon ◽  
Corinne E. Packard ◽  
Aaron J. Ptak ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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