scholarly journals Optical Detection of Protrusive Defects on a Thin-Film Transistor

Crystals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 440
Author(s):  
Fu-Ming Tzu ◽  
Jung-Shun Chen ◽  
Jung-Hua Chou
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Cost Effective ◽  
Maximum Error ◽  
Color Filter ◽  
Depth Of Field ◽  
Fast Method ◽  
Blue Color ◽  
Flat Panel Display ◽  
Color Filters

Protrusive defects on the color filter of thin-film transistor (TFT) liquid crystal displays (LCDs) frequently damage the valuable photomask. A fast method using side-view illuminations with digital charge-coupled devices (CCDs) that filter out ultraviolet (UV)490 nm was developed to detect the protrusive defects of thin-film type in four substrates of the black matrix (BM), red, green, and blue color filters. Between the photomask and substrate, the depth of field (DOF) is normally 300 μm for the proximity-type aligner; we select the four substrates to evaluate the detectability in the task. The experiment is capable of detecting measurements of 300 μm, and measurements even lower than 100 μm can be assessed successfully. The maximum error of the measurement is within 6% among the four samples. Furthermore, the uncertainty analysis of three standard deviations is conducted. Thus, the method is cost-effective to prevent damage for valuable photomasks in the flat-panel display industry.

scholarly journals Optical Detection of Protrusive Defects on Thin-film Transistor

2018 ◽  
Author(s):  
Fu-Ming Tzu ◽  
Jung-Hua Chou
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Cost Effective ◽  
Liquid Crystal Displays ◽  
Maximum Error ◽  
Color Filter ◽  
Depth Of Field ◽  
Fast Method ◽  
Flat Panel Display ◽  
Flat Panel

Protrusive defects on the color filter of thin-film transistor (TFT) liquid crystal displays (LCDs) frequently damage the valuable photomask. An fast method using side-view illuminations associated with digital charge-couple devices (CCDs) to detect the protrusive defect in the four substrates, which are the black matrix (BM), red, green, and blue. Between the photomask and substrate, the depth of field (DOF) is normally 300 μm for the proximity-type aligner; we select the four substrates to evaluate the detectability in the task. The experiment is capable of detecting measurements of 300 μm and even lower than 100 μm can be assessed successfully. The maximum error of the measurement is within 6% among the four samples. Furthermore, the uncertainty analysis of three standard deviations is conducted. Thus, the method is cost-effective to prevent damage for valuable photomasks in the flat panel display industry.

Illumination Effect on Electrical Characteristics of Poly(3-hexylthiophene): TIPS-Pentacene Blend Thin-Film Transistor

2021 ◽  
Vol 21 (7) ◽  
pp. 3829-3834
Author(s):  
Hyunji Shin ◽  
Jaehoon Park ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Incident Light ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Light Spectrum ◽  
Absorption Properties ◽  
Threshold Voltages ◽  
Component Material ◽  
Color Filters

Organic phototransistors capable of absorbing in the visible light spectrum without color filters are the best alternatives to conventional inorganic phototransistors. In this study, the effect of illumination on the electrical characteristics of a solution-processed poly(3-hexylthiophene): 6,13-bis(triisopropylsilylethynyl) pentacene-blend thin-film transistor (TFT) was investigated. The wavelengths of the irradiated light were determined from the absorbance spectrum of the blended film and changes in the transistor’s electrical characteristics were explained in relation to the electrical and light absorption properties of each component material. The photosensitivity and absorbing properties of the blended TFT were enhanced at 515 and 450 nm and exhibited positively shifted threshold voltages under incident light. The results indicated that the photo-generated exci-ton pair characteristics matched the absorbance properties of the blended material and that the absorption and photocurrent characteristics of the respective components could be combined. This process for the heterogeneous blending of organic semiconductors has the potential to improve phototransistor performance and contribute to the development of broadband absorbing phototransistors.

scholarly journals An electrical characterisation system for the real-time acquisition of multiple independent sensing parameters from organic thin film transistors

2015 ◽  
Vol 4 (1) ◽  
pp. 169-177 ◽  
Author(s):  
A. Dragoneas ◽  
L. Hague ◽  
M. Grell
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Thin Film Transistor ◽  
Cost Effective ◽  
Charge Carrier Mobility ◽  
Low Noise ◽  
Measurement Technology ◽  
Organic Thin Film ◽  
Multiple Parameters ◽  
Transfer Characteristics

Abstract. The presence of multiple independent sensing parameters in a single device is the key conceptual advantage of sensor devices based on an organic thin film transistor (OTFT) over simple organic chemiresistors. Practically, however, these multiple parameters must first be extracted from the electrical characteristics of the OTFTs and, thus, they are not immediately apparent. To exploit the advantage of OTFT sensors, we require a measurement technology to extract these parameters in real time. Here, we introduce an efficient, cost-effective system that is a faster and more compact alternative to the expensive and cumbersome laboratory-based instruments currently available. The characterisation system presented here records the electric behaviour of OTFTs in the form of its "saturated transfer characteristics" multiple times per second for virtually unlimited periods of time, with the option to multiplex up to 20 devices in parallel. By applying a bespoke algorithm to the measured transfer characteristics, the system then extracts, in real time, several underlying transistor parameters (on- and off-current, threshold voltage, and charge carrier mobility). Tests were conducted on the example of a poly(thieno[3,2-b]thiophene) (PBTTT) OTFT exposed to ethanol vapour. The system extracts the underlying OTFT parameters with very low noise without introducing apparent correlations between independent parameters as an artefact.

Bistable Technology in Flat Panel Display: Principle and Progress

2010 ◽  
Vol 428-429 ◽  
pp. 206-211 ◽  
Author(s):  
Zi Qiang Huang
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Liquid Crystals ◽  
Thin Film Transistor ◽  
Manufacturing Cost ◽  
High Grade ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Display Devices ◽  
Light Interference

Active matrices often related with high grade display devices, due to application of the storage elements, typically thin film transistor (TFT). Because of the complex procedures in the manufacturing TFT, investment of the high value manufacturing equipments and clarification plants is necessary, hence increasing the manufacturing cost of the flat panel, and more importantly, causing the pollution of water and air. As the contribution of TFT array merely exists in supplying storage function for the pixels of the display panel, large efforts have been made to find suitable cells that have bistable effect, so as to substitute the effect of TFT. As the bistable cell is just the storage pixel, one could construct a bistable cell to skip the needs of TFT active matrices. The paper is to introduce currently available bistable display devices in the following field: liquid crystal bistable displays with cholesteric liquid crystals, which is an example to introduce the bistable technology; iMod display devices based on mechanic induced bistable and light interference, which shows the possibility to construct bistable display; and the display based on solid powder movement in air or in vacuum, so called liquid powder displays, which shows how to improve the existed display.

scholarly journals Non-Contact Optical Detection of Foreign Materials Adhered to Color Filter and Thin-Film Transistor

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 101
Author(s):  
Fu-Ming Tzu ◽  
Shih-Hsien Hsu ◽  
Jung-Shun Chen
Keyword(s):  
Thin Film ◽  
Uncertainty Analysis ◽  
Thin Film Transistor ◽  
Optical Detection ◽  
Optical Methods ◽  
Color Filter ◽  
Side View ◽  
Laser Sensors ◽  
Successful Design ◽  
Foreign Materials

This paper describes the non-contact optical detection of debris material that adheres to the substrates of color filters (CFs) and thin-film transistors (TFTs) by area charge-coupled devices (CCDs) and laser sensors. One of the optical detections is a side-view illumination by an area CCD that emits a coherency light to detect debris on the CF. In contrast to the height of the debris material, the image is acquired by transforming the geometric shape from a square to a circle. As a result, the side-view illumination from the area CCD identified the height of the debris adhered to the black matrix (BM) as well as the red, green, and blue of a CF with 95, 97, 98, and 99% accuracy compared to the golden sample. The uncertainty analysis was at 5% for the BM, 3% for the red, 2% for the green, and 1% for the blue. The other optical detection, a laser optical interception with a horizontal alignment, inspected the material foreign to the TFT. At the same time, laser sensors intercepted the debris on the TFT at a voltage of 3.5 V, which the five sets of laser optics make scanning the sample. Consequently, the scanning rate reached over 98% accuracy, and the uncertainty analysis was within 5%. Thus, both non-contact optical methods can detect debris at a 50 μm height or lower. The experiment presents a successful design for the efficient prevention of a valuable component malfunction.

scholarly journals Performance Evaluation of GaN based Thin Film Transistor using TCAD Simulation

2017 ◽  
Vol 7 (1) ◽  
pp. 144 ◽  
Author(s):  
Shashi Kant Dargar ◽  
J K Srivastava ◽  
Santosh Bharti ◽  
Abha Nyati
Keyword(s):  
Thin Film ◽  
Gallium Nitride ◽  
High Speed ◽  
Thin Film Transistor ◽  
High Electron Mobility Transistors ◽  
Electrical Performance ◽  
High Electron ◽  
Flat Panel Display ◽  
Electron Mobility Transistors ◽  
Research Activities

<p>As reported in past decades, gallium nitride as one of the most capable compound semiconductor, GaN-based high-electron mobility transistors are the focus of intense research activities in the area of high power, high-speed, and high-temperature transistors. In this paper we present a design and simulation of the GaN based thin film transistor using sentaurus TCAD for the extracting the electrical performance. The resulting GaN TFTs exhibits good electrical performance in the simulated results, including, a threshold voltage of 12-15 V, an on/off current ratio of 6.5×10<sup>7 </sup>~8.3×10<sup>8</sup>, and a sub-threshold slope of 0.44V/dec. Sentaurus TCAD simulations is the tool  which offers study of comprehensive behavior of semiconductor structures with ease. The simulation results of the TFT structure based on gallium nitride active channel have great prospective in the next-generation flat-panel display applications.</p>

Electrically active organic and polymeric materials for thin-film-transistor technologies

1996 ◽  
Vol 11 (6) ◽  
pp. 1581-1592 ◽  
Author(s):  
Andrew J. Lovinger ◽  
Lewis J. Rothberg
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Polymeric Materials ◽  
Drain Current ◽  
Current Status ◽  
Flat Panel Display ◽  
Semiconducting Materials ◽  
Flat Panel ◽  
Technological Potential ◽  
Potential Alternative

Organic and polymeric materzials have seen a tremendous growth in research in the last five years as potential electroactive elements in thin-film-transistor (TFT) applications. These are driven by the increasing interest in flat-panel-display applications, for which organic and polymeric materials offer strong promise in terms of properties, processability, cost, and compatibility with eventual lightweight, flexible plastic displays. In this review we summarize the current status of our knowledge on the science of these organic and polymeric semiconducting materials. Most of these are based on linear thiophenes, especially a-hexathienyl, which has elicited by far the most attention. Mobility values in the 10−2–10−1 cm2/Vs and especially source-drain current on/off ratios of up to 106 make this a highly promising potential alternative to amorphous silicon. Other thienyl compounds are also discussed, as are polymeric analogues. A brief discussion of technological potential, limitations, and problems that need to be overcome is given at the end.

scholarly journals Fluorescence Enhanced Optical Resonator Constituted of Quantum Dots and Thin Film Resonant Cavity for High-Efficiency Reflective Color Filter

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2813
Author(s):  
Xiaochuan Chen ◽  
Pengxia Liang ◽  
Qian Wu ◽  
Qiaofeng Tan ◽  
Xue Dong
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
High Efficiency ◽  
Resonant Cavity ◽  
Optical Resonator ◽  
Utilization Efficiency ◽  
Color Filter ◽  
Application Potential ◽  
Low Efficiency ◽  
Color Filters

Conventional color filters selectively absorb a part of the backlight while reflecting or transmitting other light, resulting in the problem of low efficiency and energy wasting. For this problem, a new concept of fluorescence enhanced optical resonator was proposed and verified in this paper. The new structure consists of structural color filter and light-conversion material. Specially, a thin film resonant cavity was designed, and InP/ZnSe/ZnS quantum dots were inserted inside the resonator. When illuminated by sunlight, the novel fluorescence enhanced optical resonator could not only reflect the specific light, but also convert absorbed energy into desired light, leading to the utilization efficiency improvement of solar energy. An all-dielectric red fluorescence enhanced optical resonator was fabricated, with peak equivalent reflectance up to 105%. Compared with a thin film resonator, the enhancement coefficient of the as-proposed structure is about 124%. The new optical structure can utilize solar source efficiently, showing application potential as the next generation of reflective color filters for display.

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