scholarly journals Investigation of Si Dendrites by Electron-Beam-Induced Current

Crystals ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 317 ◽  
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Shun Ito ◽  
Koji Nakazato ◽  
Takashi Kimura ◽  
...  
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Charge Carriers ◽  
Induced Current ◽  
Carrier Recombination ◽  
Impurity Contamination ◽  
Electron Beam Induced Current ◽  
Recombination Centers ◽  
The Difference

This paper reports on electron-beam-induced current (EBIC) characterization of special multicrystalline Si ingot by dendritic growth under high undercooling. Grain boundaries (GBs), dislocations, and their interaction with carbon related precipitates were investigated. The difference between grains from dendrite and non-dendrite growth was compared. In dendrite grains, parallel twins were frequently found. In non-dendrite grains, irregular GBs of various characters co-existed. Both parallel twins and irregular GBs exhibited dark EBIC contrast at room temperature, indicating the presence of minority carrier recombination centers due to impurity contamination. However, sometimes in non-dendrite grains GBs were visualized with bright EBIC contrast with enhanced collection of charge carriers. The origin of the abnormal bright EBIC contrast was explored and it turned out to be SiC related precipitates, which made GBs conduction channels for electron transport.

Characterization of 4H-SiC pn Structures with Unstable Excess Current

2015 ◽  
Vol 821-823 ◽  
pp. 648-651
Author(s):  
Anatoly M. Strel'chuk ◽  
Eugene B. Yakimov ◽  
Alexander A. Lavrent’ev ◽  
Evgenia V. Kalinina ◽  
Alexander A. Lebedev
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
Induced Current ◽  
Excess Current ◽  
Forward Current ◽  
Electron Beam Induced Current

4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)Ÿ1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.

Recombination Processes in 4H-SiC pn Structures

2016 ◽  
Vol 858 ◽  
pp. 345-348 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Baptiste Berenguier ◽  
Eugene B. Yakimov ◽  
Laurent Ottaviani
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Diffusion Length ◽  
Induced Current ◽  
Donor Concentration ◽  
Reverse Voltage ◽  
Recombination Processes ◽  
Electron Beam Induced Current ◽  
Switching Characteristics ◽  
Hole Diffusion Length

Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

Characterization of GaAs wafers and epilayers with electron‐beam‐induced current, etching, and reflected light

1987 ◽  
Vol 62 (10) ◽  
pp. 4248-4254 ◽  
Author(s):  
L. D. Partain ◽  
S. M. Dean ◽  
B. L. Berard ◽  
P. S. McLeod ◽  
L. M. Fraas ◽  
...  
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Reflected Light ◽  
Electron Beam Induced Current
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