scholarly journals Specific Structural Disorder in an Anion Layer and Its Influence on Conducting Properties of New Crystals of the (BEDT-TTF)4A+[M3+(ox)3]G Family, Where G Is 2-Halopyridine; M Is Cr, Ga; A+ Is [K0.8(H3O)0.2]+

Crystals ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 92 ◽  
Author(s):  
Tatiana Prokhorova ◽  
Eduard Yagubskii ◽  
Leokadiya Zorina ◽  
Sergey Simonov ◽  
Vladimir Zverev ◽  
...  
Keyword(s):  
Structural Disorder ◽  
Anion Layer

Measurement and Reduction of Radiation Damage in Frozen Hydrated Crystalline Specimens

1978 ◽  
Vol 36 (3) ◽  
pp. 70-77 ◽  
Author(s):  
R.M. Glaeser ◽  
S.B. Hayward
Keyword(s):  
Diffraction Pattern ◽  
Structural Information ◽  
Structural Disorder ◽  
Structural Features ◽  
Biological Macromolecules ◽  
Diffraction Intensity ◽  
Object Structure ◽  
Specimen Material ◽  
Unit Cells ◽  
Identical Unit

Highly ordered or crystalline biological macromolecules become severely damaged and structurally disordered after a brief electron exposure. Evidence that damage and structural disorder are occurring is clearly given by the fading and eventual disappearance of the specimen's electron diffraction pattern. The fading and disappearance of sharp diffraction spots implies a corresponding disappearance of periodic structural features in the specimen. By the same token, there is a oneto- one correspondence between the disappearance of the crystalline diffraction pattern and the disappearance of reproducible structural information that can be observed in the images of identical unit cells of the object structure. The electron exposures that result in a significant decrease in the diffraction intensity will depend somewhat upon the resolution (Bragg spacing) involved, and can vary considerably with the chemical makeup and composition of the specimen material.

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

scholarly journals Effect of structural disorder on the Kitaev magnet Ag3LiIr2O6

2021 ◽  
Vol 103 (9) ◽  
Author(s):  
Faranak Bahrami ◽  
Eric M. Kenney ◽  
Chennan Wang ◽  
Adam Berlie ◽  
Oleg I. Lebedev ◽  
...  
Keyword(s):  
Structural Disorder

Mere Anarchy is Loosed: Structural Disorder in Cu2Zn1–xCdxSnS4

2021 ◽  
Author(s):  
Amit Bhattacharya ◽  
Dylan G. Tkachuk ◽  
Arthur Mar ◽  
Vladimir K. Michaelis
Keyword(s):  
Structural Disorder

Experimental and Theoretical Insights into the Structural Disorder and Gas Sensing Properties of ZnO

2021 ◽  
Vol 3 (3) ◽  
pp. 1447-1457
Author(s):  
Bruno Sanches de Lima ◽  
Paulina R. Martínez-Alanis ◽  
Frank Güell ◽  
Weverton Alison dos Santos Silva ◽  
Maria I.B. Bernardi ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Structural Disorder ◽  
Sensing Properties ◽  
Gas Sensing Properties

scholarly journals Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 988
Author(s):  
Chrysa Aivalioti ◽  
Alexandros Papadakis ◽  
Emmanouil Manidakis ◽  
Maria Kayambaki ◽  
Maria Androulidaki ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Phase ◽  
Structural Disorder ◽  
Energy Band Gap ◽  
Nitrogen Doped ◽  
Nio Thin Film ◽  
Direct Band ◽  
Output Characteristics ◽  
Indirect Band Gap ◽  
P Type

Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.

scholarly journals Electrical transport properties and Kondo effect in La1−xPrxNiO3−δ thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Van Hien-Hoang ◽  
Nak-Kwan Chung ◽  
Heon-Jung Kim
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Kondo Effect ◽  
Magnetic Moments ◽  
Structural Disorder ◽  
Strongly Correlated ◽  
Electrical Transport Properties ◽  
Strongly Correlated Electron ◽  
Correlated Electron Systems ◽  
Correlated Electron

AbstractThe Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1−xPrxNiO3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.

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