scholarly journals The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2

Crystals ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 115 ◽  
Author(s):  
Luojun Du ◽  
Hua Yu ◽  
Li Xie ◽  
Shuang Wu ◽  
Shuopei Wang ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Transport Properties ◽  
Electrical Transport ◽  
Monolayer Mos2 ◽  
Electrical Transport Properties

Grain boundary effect on the β-boron electrical transport properties at high pressure

2010 ◽  
Vol 97 (17) ◽  
pp. 174101 ◽  
Author(s):  
Ming Li ◽  
Jie Yang ◽  
Karim Snoussi ◽  
Lixin Li ◽  
Huixin Wang ◽  
...  
Keyword(s):  
High Pressure ◽  
Grain Boundary ◽  
Transport Properties ◽  
Electrical Transport ◽  
Boundary Effect ◽  
Electrical Transport Properties ◽  
Grain Boundary Effect

Grain Boundary Effect on Electrical Transport Properties of Graphene

2014 ◽  
Vol 118 (5) ◽  
pp. 2338-2343 ◽  
Author(s):  
Hengji Zhang ◽  
Geunsik Lee ◽  
Cheng Gong ◽  
Luigi Colombo ◽  
Kyeongjae Cho
Keyword(s):  
Grain Boundary ◽  
Transport Properties ◽  
Electrical Transport ◽  
Boundary Effect ◽  
Electrical Transport Properties ◽  
Grain Boundary Effect

Electrical transport properties of Bi2223 [] tilt grain boundary junctions

2002 ◽  
Vol 372-376 ◽  
pp. 649-651 ◽  
Author(s):  
A. Attenberger ◽  
J. Hänisch ◽  
B. Holzapfel ◽  
L. Schultz
Keyword(s):  
Grain Boundary ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Tilt Grain Boundary

Electrical transport properties of AlAs under compression: reversible boundary effect

2015 ◽  
Vol 17 (39) ◽  
pp. 26277-26282 ◽  
Author(s):  
Jiejuan Yan ◽  
Feng Ke ◽  
Cailong Liu ◽  
Qinglin Wang ◽  
Junkai Zhang ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Transport Properties ◽  
Electrical Transport ◽  
Boundary Effect ◽  
Electrical Transport Properties ◽  
Grain Boundary Effect ◽  
Resistance Difference

The grain boundary effect can be modulated by compression and plays positive roles on performance of devices such as increasing the resistance difference between two states.

scholarly journals Author Correction: Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
João Resende ◽  
Van-Son Nguyen ◽  
Claudia Fleischmann ◽  
Lorenzo Bottiglieri ◽  
Stéphane Brochen ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Transport Properties ◽  
Cuprous Oxide ◽  
Electrical Transport ◽  
Boundary Segregation ◽  
Grain Boundary Segregation ◽  
Electrical Transport Properties

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

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