scholarly journals Optical Properties and Band Gap of Ternary PSN-PMN-PT Single Crystals

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 955
Author(s):  
Wei Long ◽  
Xing Fan ◽  
Pinyang Fang ◽  
Xiaojuan Li ◽  
Zengzhe Xi

This study investigated the optical properties and the interband transition of a ternary [100]-oriented 6PSN-61PMN-33PT relaxor ferroelectric single crystal. Compared with the binary [100]-oriented PMN-32PT crystal, the [100]-oriented 6PSN-61PMN-33PT crystal exhibited excellent optical properties, including high transmittance, low refractive index, weak frequency dispersion, and low reflection and absorption coefficients. All these differences can be attributed to the structural changes of the 6PSN-61PMN-33PT crystal, such as its large lattice size and increased band gap. The crystal’s transmittance was significantly improved after alternating current electric field poling due to the increased domain size and the order domain structure. The largest transmittance for the 6PSN-61PMN-33PT crystal was up to 66%. Our experimental results indicate that the ternary 6PSN-61PMN-33PT ferroelectric single crystal has great application potential in the optical field.

2013 ◽  
Vol 46 (24) ◽  
pp. 245104 ◽  
Author(s):  
Chongjun He ◽  
Yungang Zhang ◽  
Liang Sun ◽  
Jiming Wang ◽  
Tong Wu ◽  
...  

2019 ◽  
Vol 20 (3) ◽  
pp. 264-268
Author(s):  
P.O. Gentsar ◽  
M.V. Vuichyk ◽  
M.V. Isaev ◽  
P.O. Lischuk

In this paper the reflectance spectra and transmission spectra of p-Si (100) porous silicon (PS) and silicon wires in the spectral range of 200 ÷ 1800 nm were investigated. Pore size of PS was 5 μm (lpor Si layer) and 50 μm (lpor Si layer) with porosity of 45 %, 55 % and 65 %. The length of silicon wires varies from 5.5 μm, to 50 μm with a porosity of 60 %. The decrease in the band gap of p-Si (100) porous silicon and silicon wires which grown on both sides of p-Si (100) as compared to the single crystal p-Si (100) is explained by the quantum-sized effect that occurs in the investigated objects.


Crystals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 237 ◽  
Author(s):  
Enrico Bandiello ◽  
Josu Sánchez-Martín ◽  
Daniel Errandonea ◽  
Marco Bettinelli

We report on optical spectroscopic measurements in pure NdVO4 crystals at pressures up to 12 GPa. The influence of pressure on the fundamental absorption band gap and Nd3+ absorption bands has been correlated with structural changes in the crystal. The experiments indicate that a phase transition takes place between 4.7 and 5.4 GPa. We have also determined the pressure dependence of the band-gap and discussed the behavior of the Nd3+ absorption lines under compression. Important changes in the optical properties of NdVO4 occur at the phase transition, which, according to Raman measurements, corresponds to a zircon to monazite phase change. In particular, in these conditions a collapse of the band gap occurs, changing the color of the crystal. The changes are not reversible. The results are analyzed in comparison with those deriving from previous studies on NdVO4 and related vanadates.


2004 ◽  
Vol 848 ◽  
Author(s):  
S.W.H. Eijt ◽  
van Huis ◽  
P.E. Mijnarends ◽  
B.J. Kooi ◽  
M. Nanu

ABSTRACTWe present a study of CdSe nanocrystals synthesized in MgO by precipitation of Cd and Se supersaturated solid solutions, created in MgO single crystals by ion implantation, in the temperature range between 300 °C and 1100 °C. For high-dose ion implantation, optical absorption spectroscopy revealed the presence of the ∼1.8 eV CdSe semiconductor band-edge. Small sized nanocrystals adopt the rocksalt instead of the wurtzite structure because the former fits better in the MgO matrix and results in lower interface energies. A better understanding of these structural changes and optical properties is obtained from ab-initio total energy calculations on wurtzite, zincblende and rocksalt CdSe using the VASP pseudopotential code. The calculated electronic band structures are compared of zincblende CdSe, a direct band-gap semiconductor, and rocksalt CdSe, which has an indirect optical band-gap.


1997 ◽  
Vol 500 ◽  
Author(s):  
Ming Dong ◽  
Rosario A. Gerhardt

ABSTRACTThe dielectric properties of a c-oriented ferroelectric Li0.982Ta1.004O3 single crystal have been investigated. The frequency and the temperature dependence of the dielectric properties have been measured from 500 to 650°C at frequencies ranging from 5 to 106 Hz. Both blocking and non-blocking electrodes were used for separating the electrode effect from the crystal bulk dielectric response. A low-frequency dispersion was identified to be due to the contribution of Li+ ionic carriers. Based on the electrical measurement data and complex nonlinear least squares fitting, an equivalent circuit is proposed to represent the dielectric properties of the single crystal.


2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
S. Asha ◽  
Y. Sangappa ◽  
Sanjeev Ganesh

TheBombyx morisilk fibroin (SF) films were prepared by solution casting method and effects of electron beam on the optical properties and optical constants of the films have been studied by using UV-Visible spectrophotometer. Optical properties like optical band gapEg, refractive indexn, extinction coefficientk, optical conductivityσopt, and dielectric constantsε∗of virgin and electron irradiated films were determined by using UV-Visible absorption and transmission spectra. It was found that the reduction in optical band gap and increase in refractive index with increasing radiation dosage was observed. It is also observed from results that there is increase in dielectric constants with increasing photon energy. The observed optical changes have been tried to be correlated with the structural changes, revealed through FT-IR spectroscopy. The present study is quite important for tailoring the optical responses of SF films as per specific requirements.


Author(s):  
Gary Cicirello ◽  
Kui Wu ◽  
Bingbing Zhang ◽  
Jian Wang

La4Ge3S12 was structurally characterized in 1974 without any optical or nonlinear optical properties reported. Herein we report that the The acentric crystal structure of La4Ge3S12 has been confirmed by single-crystal...


2006 ◽  
Vol 100 (1) ◽  
pp. 013112 ◽  
Author(s):  
Chongjun He ◽  
Laihui Luo ◽  
Xiangyong Zhao ◽  
Haiqing Xu ◽  
Xuehua Zhang ◽  
...  

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