scholarly journals Crystalline Silicon (c-Si) Solar Cell Interconnect Damage Prediction Function Based on Effect of Temperature Ramps and Dwells on Creep Damage under Field Thermal Cycling

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 633
Author(s):  
Frank Kwabena Afriyie Nyarko ◽  
Gabriel Takyi ◽  
Anthony Agyei Agyemang ◽  
Charles Kofi Kafui Sekyere
Keyword(s):  
Solar Cell ◽  
Energy Density ◽  
Thermal Cycle ◽  
Crystalline Silicon ◽  
Creep Damage ◽  
Sub Saharan Africa ◽  
Lead Free ◽  
Thermal Cycles ◽  
Damage Functions ◽  
Si Solar Cell

c-Si solar cell interconnection damages from thermal cycles emanate from cumulative damage contributions from the various load steps in a typical thermal cycle. In general, a typical thermal cycle involves five thermal load steps, namely: 1st cold dwell, ramp-up, hot dwell, ramp-down, and 2nd cold dwell. To predict the contributions of each of these load steps to creep damage in soldered interconnections, each of the respective load steps needs to be profiled to accurately fit a function capable of predicting the damage contributions from a given number of thermal cycles. In this study, a field thermal cycle profile generated from in situ thermal cyclings at a test site in Kumasi, a hot humid region of sub-Saharan Africa, is used to predict damage in solar cell interconnections from accumulated creep energy density using finite element analysis (FEA). The damage was assessed for two different solder formulations, namely: Pb60Sn40 and Sn3.8Ag0.7Cu (lead-free). The results from the FEA simulations show that the cooling (ramp-down) load steps accounted for the highest accumulated creep energy density (ACED) damage in solder interconnections. The ramp-up load steps followed this closely. The cumulative contributions of the two load steps accounted for 78% and 88% of the total damage per cycle in the Pb60Sn40 and Sn3.8Ag0.7Cu solder interconnections, respectively. Furthermore, a study of the damage profiles from each of the five load steps revealed that each of the damage functions from the various load steps is a step function involving the first two thermal cycles, on one hand, and the remaining 10 thermal cycles on the other hand. The damage from the first two thermal cycles can be predicted from a logarithmic function, whereas the damage from the remaining 10 thermal cycles is predicted using six-order polynomial functions. The ACED results computed from the damage functions are in close agreement with the results from the FEA simulation. The functions generated provide useful relations for the prediction of the life (number of cycles to failure) of solder interconnections in solar cells. The systematic approach used in this study can be repeated for other test sites to generate damage functions for the prediction of the life of c-Si PV cells with SnPb and lead-free solder interconnections.

scholarly journals Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Incident Light ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

Study on Multi-Crystalline Silicon Textured by Ultrasound

2011 ◽  
Vol 130-134 ◽  
pp. 50-53
Author(s):  
Yan Chao ◽  
Li Qun Wu ◽  
Xiao Lu Luo
Keyword(s):  
Electron Microscope ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Incident Light ◽  
Surface Texturing ◽  
Distributed Morphology ◽  
Acid Etching ◽  
Si Solar Cell ◽  
Scanning Electron

Surface texturing of silicon can reduce the reflectance of incident light and increase the conversion efficiency of solar cells. Many approaches have been present in texturing silicon solar cell. In this paper, ultrasound is introduced into acid solution to texture the surface of multicrystalline silicon (mc-Si) solar cell. The morphology images are obtained by scanning electron microscope (SEM), more holes and regular distributed morphology for the presented method can be observed. Antireflectance of the mc-Si surface is measured by spectrophotometer, and the reflectance of 10.2% is obtained for the presented method, which is much less than that of acid etching.

scholarly journals Hybrid(Luminescent and Fresnel ) Concentrators to Improve Solar Panel Conversion Efficiency

2011 ◽  
Vol 8 (2) ◽  
pp. 577-580 ◽  
Author(s):  
Baghdad Science Journal
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Silicon Solar Cells ◽  
The Sun ◽  
Crystalline Silicon Solar Cells ◽  
Si Solar Cell ◽  
Irradiance Spectrum

The spectral response of the Si solar cell does not coincidence with the sun irradiance spectrum, so the efficiency of the Si solar cell is not high. To improve the Si solar cell one try to make use of most region of the sun spectrum by using dyes which absorb un useful wavelengths and radiate at useful region of spectrum (by stock shift). Fluorescence's dye is used as luminescent concentrator to increase the efficiency of the solar cell. The results show that the performance efficiency and out power for crystalline silicon solar cells are improved.

scholarly journals Four-terminal perovskite-silicon tandem solar cells for low light applications

2021 ◽  
Vol 2103 (1) ◽  
pp. 012191
Author(s):  
A B Nikolskaia ◽  
S S Kozlov ◽  
M F Vildanova ◽  
O K Karyagina ◽  
O I Shevaleevskiy
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Perovskite Solar Cells ◽  
Tandem Solar Cell ◽  
Low Light ◽  
Tandem Solar Cells ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
High Efficient

Abstract Here novel high efficient semi-transparent perovskite solar cells (PSCs) based on ZrO2 photoelectrodes were fabricated and were used as top elements in tandem systems with crystalline silicon (c-Si) solar cells in four-terminal configuration. The comparative analysis of photovoltaic parameters measured for PSCs, c-Si solar cells and PSC/c-Si tandem solar cells demonstrated that the use of ZrO2 photoelectrodes allows to improve the PSC performance and to achieve efficiencies for PSC/c-Si tandem solar cell higher than for a standalone c-Si solar cell under varying illumination conditions.

INVESTIGATION OF NEAR-SURFACE DEFECTS INDUCED BY SPIKE RAPID THERMAL ANNEALING IN c-SILICON SOLAR CELLS

2016 ◽  
Vol 23 (02) ◽  
pp. 1550107
Author(s):  
GUODONG LIU ◽  
PAN REN ◽  
DAYONG ZHANG ◽  
WEIPING WANG ◽  
JIANFENG LI
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Surface Defects ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Near Surface ◽  
Si Solar Cell ◽  
Dislocation Defects

The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100[Formula: see text]C. Photo J–V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above [Formula: see text][Formula: see text]cm[Formula: see text].

scholarly journals Study on Creep Damage in Sn60Pb40 and Sn3.8Ag0.7Cu (Lead-Free) Solders in c-Si Solar PV Cell Interconnections under In-Situ Thermal Cycling in Ghana

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 441
Author(s):  
Frank Kwabena Afriyie Nyarko ◽  
Gabriel Takyi ◽  
Francis Boafo Effah
Keyword(s):  
Energy Density ◽  
Creep Strain ◽  
Thermal Cycle ◽  
Creep Damage ◽  
Temperature Cycle ◽  
Solder Interconnection ◽  
Snpb Solder ◽  
Pv Modules ◽  
Free Solder ◽  
Density Methods

A numerical study on the creep damage in soldered interconnects in c-Si solar photovoltaic cells has been conducted using equivalent creep strain, accumulated creep strain and accumulated creep energy density methods. The study used data from outdoor weathering of photovoltaic (PV) modules over a three-year period (2012–2014) to produce temperature cycle profiles that served as thermal loads and boundary conditions for the investigation of the soldered interconnects’ thermo-mechanical response when exposed to real-world conditions. A test region average (TRA) temperature cycle determined in a previous study for the 2012–2014 data was also used. The appropriate constitutive models of constituent materials forming a typical solar cell were utilized to generate accurate material responses to evaluate the damage from the thermal cycles. This study modeled two forms of soldered interconnections: Sn60Pb40 (SnPb) and Sn3.8Ag0.7Cu (Pb-free). The results of the damage analysis of the interconnections generated from the thermal cycle loads using accumulated creep strain method showed that the Pb-free solder interconnection recorded greater damage than that of the SnPb-solder interconnection for the TRA, 2012, 2013 and 2014 temperature cycles. The percentage changes from SnPb to Pb-free were 57.96%, 43.61%, 44.87% and 45.43%, respectively. This shows significant damage to the Pb-free solder under the TRA conditions. Results from the accumulated creep energy density (ACED) method showed a percentage change of 71.4% (from 1.3573 × 105 J/mm3 to 2.3275 × 105 J/mm3) in accumulated creep energy density by replacing SnPb-solder with Pb-free solder interconnection during the TRA thermal cycle. At the KNUST test site in Kumasi, Ghana, the findings show that Sn60Pb40 solder interconnections are likely to be more reliable than Pb-free solder interconnections. The systematic technique employed in this study would be useful to the thermo-mechanical reliability research community. The study also provides useful information to PV design and manufacturing engineers for the design of robust PV modules.

A More Than 18% Efficiency Hit Structure a-Si/c-Si Solar Cell Using Artificially Constructed Junction (ACJ)

1992 ◽  
Vol 258 ◽  
Author(s):  
Y. Kuwano ◽  
S. Nakano ◽  
M. Tanaka ◽  
T. Takahama ◽  
T. Matsuyama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Layer Structure ◽  
Type A ◽  
Interface Layer ◽  
Material Technology ◽  
Si Solar Cell

ABSTRACTWe have obtained the world's highest total area conversion efficiency of 11.1% for a 100cm2 integrated-type single-junction a-Si solar cell submodule. This was achieved by the development of various advanced technologies, such as a new ultra-thin i/n interface layer and a new laser patterning method using an ablation phenomenon.To acheive further improvement in the conversion efficiency of a-Si based solar cells, we focus on polycrystalline silicon (poly-Si) thin-film for a-Si/poly-Si tandem solar cells. As far as material technology is concerned, we have used a new solid phase crystallization (SPC) method from amorphous silicon (a-Si) films deposited by plasma-CVD. The maximum mobility of 623 cm2/V.s was achieved on textured substrates at a carrier concentration of 3.0 × 1015 cm-3. This film has been applied to the active layer of poly-Si solar cells on metal substrates and a conversion efficiency of 6.2% has been obtained with poly-Si film of 12 μm thickness made by SPC at 600°C.In the field of device technology, we have developed new artificially constructed junction (ACJ) solar cells using p-type a-Si/i-type a-Si/n-type crystalline silicon (c-Si). We call this a HIT (Heterojunction with Intrinsic Ihin-layer) structure, and we have achieved a conversion efficiency of 18.1% for this type of solar cells. This is the highest reported value for a cell with a junction fabricated at low temperature (∼ 120°C).

Transparent ZnO-nanowire-based device for UV light detection and ethanol gas sensing on c-Si solar cell

RSC Advances ◽  
2016 ◽  
Vol 6 (14) ◽  
pp. 11146-11150 ◽  
Author(s):  
Chih-hung Lin ◽  
Shoou-Jinn Chang ◽  
Wei-Shou Chen ◽  
Ting-Jen Hsueh
Keyword(s):  
Solar Cell ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Gas Sensing ◽  
Crystalline Silicon ◽  
Uv Light ◽  
Uv Detection ◽  
Zno Nanowire ◽  
Light Detection ◽  
Si Solar Cell

In this study, a transparent ZnO nanowire (NW)-based device for ethanol gas sensing and ultraviolet (UV) detection was fabricated and deposited onto an indium tin oxide/crystalline silicon (c-Si) solar cell.

The Measurements of Spectral Reflectance Spatial Distribution on Mc-Si Solar Cell Surface

2012 ◽  
Vol 241-244 ◽  
pp. 2184-2187
Author(s):  
Xiao Dong Zheng ◽  
Yan Zhong Ye ◽  
Lin Fang Shen
Keyword(s):  
Spatial Distribution ◽  
Solar Cell ◽  
Spectral Reflectance ◽  
Crystalline Silicon ◽  
Optical Measurement ◽  
Sampling Interval ◽  
Crystalline Silicon Solar Cells ◽  
Si Solar Cell ◽  
Measurement Results ◽  
Reflectance Meter

Measurement results of spectral reflectance spatial distribution on multi-crystalline silicon solar cells surface are presented. The optical measurement apparatus employs a specific designed micro-spectral reflectance meter. It is suitable for working in visible wavelength range; measurable sample size can be as small as 0.06mm. Results of reflectance distribution on mc-Si solar cell are presented as a spatial sampling interval of 0.1 mm. The peak values of spectral reflectance appear about 400nm wavelength and vary from 10% to 30% with the spatial position on solar cell.

Sign in / Sign up

Export Citation Format

Share Document