scholarly journals Combinatorial Materials Design Approach to Investigate Adhesion Layer Chemistry for Optimal Interfacial Adhesion Strength

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 357
Author(s):  
Rachel L. Schoeppner ◽  
Barbara Putz ◽  
Aidan A. Taylor ◽  
Laszlo Pethö ◽  
Keith Thomas ◽  
...  
Keyword(s):  
Failure Load ◽  
General Rule ◽  
Practical Work ◽  
Work Of Adhesion ◽  
Single Element ◽  
Scratch Testing ◽  
Adhesion Layer ◽  
Combinatorial Materials ◽  
Interfacial Adhesion Strength ◽  
Si Wafer

A combinatorial material adhesion study was used to optimize the composition of an adhesion promoting layer for a nanocrystalline diamond (NCD) coating on silicon. Three different adhesion promoting metals, namely W, Cr, and Ta, were selected to fabricate arrays of co-sputtered binary alloy films, with patches of seven different, distinct alloy compositions for each combination, and single element reference films on a single Si wafer (three wafers in total; W–Cr, Cr–Ta, Ta–W). Scratch testing was used to determine the critical failure load and practical work of adhesion for the NCD coatings as a function of adhesion layer chemistry. All tested samples eventually exhibit delamination of the NCD coating, with buckles radiating perpendicularly away from the scratch track. Application of any of the presented adhesion layers yields an increase of the critical failure load for delamination as compared to NCD on Si. While the influence of adhesion layers on the maximum buckle length is less pronounced, shorter buckles are obtained with pure W and Cr–Ta alloy layers. As a general rule, the addition of an adhesion layer showed a 75% improvement in the measured adhesion energies of the NCD films compared to the NCD coating without an adhesion layer, with specific alloys and compositions showing up to 125% increase in calculated practical work of adhesion.

Three-Dimensional Mechanical Modeling of Magnet-Controlled Transfer Printing

2019 ◽  
Vol 11 (05) ◽  
pp. 1950042 ◽  
Author(s):  
Xiaofei Zhang ◽  
Changhong Linghu ◽  
Jizhou Song
Keyword(s):  
Adhesion Strength ◽  
Interfacial Adhesion ◽  
Scaling Law ◽  
Three Dimensional ◽  
Magnetic Pressure ◽  
Work Of Adhesion ◽  
Engineering Systems ◽  
Transfer Printing ◽  
Dimensional Parameters ◽  
Interfacial Adhesion Strength

The recently developed magnet-controlled transfer printing is valuable to develop advanced engineering systems due to its ability to tune the interfacial adhesion strength continuously and rapidly. A three-dimensional analytical model based on the energy method is developed for the magnet-controlled transfer printing. The predicted interfacial adhesion strengths agree well with experiments. A scaling law is established for the normalized interfacial adhesion strength, which depends on only four non-dimensional parameters: the normalized stamp size, the normalized stamp height, the normalized work of adhesion, and the normalized magnetic pressure. The influences of the non-dimensional parameters on the adhesion strength are fully investigated. This study provides a theory to guide the design of stamp and selection of the magnetic pressure to enable a successful magnet-controlled transfer printing.

Practical Work of Adhesion of Polymer Coatings Studied by Laser Induced Delamination

2005 ◽  
Vol 875 ◽  
Author(s):  
A. Fedorov ◽  
J. Th. M. De Hosson ◽  
R. van Tijum ◽  
W.-P. Vellinga
Keyword(s):  
Steel Substrate ◽  
Element Model ◽  
Polymer Coatings ◽  
Practical Work ◽  
Work Of Adhesion ◽  
Elastic Model ◽  
Calculated Stress ◽  
Thin Polymer ◽  
Pet Film ◽  
Work Of Fracture

AbstractLaser Induced Delamination is a novel technique aimed at measuring the practical work of adhesion of thin polymer coatings on metal substrates. In this technique a laser pulse is used to create initial blisters which initiate further delamination of the film under the blister pressure. A simple elastic model is developed to describe the formation of the blisters. The model predicts the values for the blister height and pressure, which are in fair agreement with the experimental results. In order to account for possible plastic deformations, simulations using a finite element model with a mixed mode cohesive zone were carried out. The calculated stress fields are in agreement with those predicted by the elastic model suggesting that the contribution of plastic deformation to the measured work of fracture is rather limited.Measurements are carried out on a number of samples, presenting ECCS steel substrate covered with 35 μm thick polyethylene terephthalate (PET) film. The tensile stresses created in the film at the interface required for delamination are estimated at 7-8 MPa, which corresponds to the practical work of adhesion G = (0.6± 0.1) J/m2.

Continuous microscratch measurements of the practical and true works of adhesion for metal/ceramic systems

1996 ◽  
Vol 11 (12) ◽  
pp. 3133-3145 ◽  
Author(s):  
S. Venkataraman ◽  
D. L. Kohlstedt ◽  
W. W. Gerberich
Keyword(s):  
Thin Film ◽  
Energy Dissipation ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Plastic Work ◽  
Practical Work ◽  
Work Of Adhesion ◽  
Plastic Energy ◽  
Annealing Conditions ◽  
Metal Ceramic

Using a continuous microscratch technique, the adhesion strengths of Pt, Cr, Ti, and Ta2N metallizations to NiO and Al2O3 substrates have been characterized. The practical work of adhesion was determined as a function of both thickness and annealing conditions. For all except the Ta2N films, the practical work of adhesion increases nonlinearly from a few tenths of a J/m2 to several J/m2 as the thickness of the thin film is increased, indicating that a greater amount of plastic work is expended in delaminating thicker films. Further, the practical work of adhesion also increases with increasing annealing temperature, indicating stronger bonding at the interface. In the limit that the film thickness tends to zero, the plastic energy dissipation in the film tends to zero. As a result, the extrapolation to zero thickness yields the true work of adhesion for that system.

scholarly journals Influence of Adhesion Layers on the Surface Morphology of Platinum-based Bottom Electrodes for Pb(Zr,Ti)O3 Thin Films

2010 ◽  
Vol 20 (1) ◽  
pp. 51
Author(s):  
Nguyen Thanh Huy ◽  
Vu Ngoc Hung
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Tio2 Layer ◽  
Si Substrate ◽  
Post Deposition Annealing ◽  
Adhesion Layer ◽  
Pt Electrode ◽  
Hillock Formation ◽  
Post Deposition ◽  
Si Wafer

A thin adhesion layer is required to glue Pt bottom electrodes of ferroelectric Pb(Zr,Ti)O3 thin films to a SiO2/Si wafer. Here we report the effect of adhesion layers, Ti and TiO2, on the crystalline structure and surface properties of Pt electrode. The results show the hillock formation is observed for the case of Ti glue layer, while the surface of Pt layer is flat and uniform with TiO2 layer used instead. The crystallization in PZT thin films on Pt/TiO2/SiO3/Si substrate is investigated during post-deposition annealing. The perovskite phase is completely formed in the film annealed at 650oC for one hour.

Adhesion Quantification of Post-CMP Copper to Amorphous SiN Passivation by NanoIndentation

2000 ◽  
Vol 649 ◽  
Author(s):  
J. B. Vella ◽  
S. M. Smith ◽  
A. A. Volinsky ◽  
I. S. Adhihetty
Keyword(s):  
Silicon Nitride ◽  
Copper Film ◽  
Copper Surface ◽  
Nitrogen Plasma ◽  
Practical Work ◽  
Work Of Adhesion ◽  
Passivation Film ◽  
Point Bend ◽  
Sputter Deposited ◽  
Tip Radius

ABSTRACTIn this study, film interfacial fracture is induced by nanoindentation to quantify the practical work of adhesion of a post-CMP copper film to an amorphous silicon nitride passivation film. Poor adhesion of electrodeposited copper to SiN passivation is observed following CMP due to copper oxide growth prior to plasma enhanced silicon nitride deposition. Four point bend testing has shown that failure by brittle fracture of test structures occurs at the Cu/CuO interface. Hydrogen, ammonia, and nitrogen plasma treatments of the post-CMP copper surface can be used to remove the oxide, shown by auger electron spectroscopy, and to increase the surface roughness of copper, shown by atomic force microscopy. Both effects can be used to improve the Cu/SiN adhesion. Nanoindentation with a conical indenter (1.59 μm tip radius) was used to induce SiN film delaminations from Cu, the sizes of which were measured and correlated with the practical work of adhesion.[1,2] In order to more reliably and repeatably produce these delaminations a TiW (10wt% Ti) superlayer was sputter deposited on to the test structures.[2,3] Mechanical properties, including elastic modulus and hardness of SiN, electrodeposited copper, and TiW measured by nanoindentation are also reported here.

Cracking Mechanisms of Fine Lines by Microwedge Scratch Testing

1994 ◽  
Vol 338 ◽  
Author(s):  
M. P. dE Boer ◽  
H. Huang ◽  
J. C. Nelson ◽  
E. T. Lilleodden ◽  
W. W. Gerberich
Keyword(s):  
Thin Film ◽  
Silicon Oxide ◽  
Interfacial Crack ◽  
Work Of Adhesion ◽  
Scratch Testing ◽  
A Value ◽  
Cracking Mechanisms ◽  
Maximum Crack ◽  
Tensile Strains ◽  
The Difference

ABSTRACTThree types of cracks associated with interfacial failure of a tungsten fine line on silicon oxide (SiO2) have been observed in microwedge scratch testing (MWST) of fine lines. They were identified by carefully controlling scratch conditions in a continuous microindenter system1, in conjunction with SEM micrographs. The first type is a hinge crack, which is responsible for nucleating an interfacial crack. The driving force for the hinge crack is the difference in stress conditions in the middle on theline (plane strain) and the outside of the line (plane stress). The second type is the interfacial crack, which is driven by the movement of the microwedge. This crack is modelled by the finite element method (FEM) to obtain an interfacial work of adhesion value. The third type of crack is a spallation crack, and is driven by tensile strains associated with buckling of the thin film once the interfacial crack becomes sufficiently long. Tensile strains in the film at the maximum crack length are calculated by FEM in order to arrive at a value of thin film fracture strength. A brittle failure mechanism has beenconfirmed by a micrograph of a spalled piece exhibiting no perceptible plastic deformation.

An atom chip for the manipulation of ultracold atoms

2009 ◽  
Vol 87 (6) ◽  
pp. 633-638 ◽  
Author(s):  
O. Cherry ◽  
J. D. Carter ◽  
J. D.D. Martin
Keyword(s):  
Magnetic Field ◽  
Ultracold Atoms ◽  
Cold Atoms ◽  
Atom Chip ◽  
Adhesion Layer ◽  
Field Gradients ◽  
Magnetic Field Gradients ◽  
Lift Off ◽  
20 Nm ◽  
Si Wafer

We have fabricated an atom chip that magnetically traps laser cooled 87Rb by generating high magnetic-field gradients using micrometre scale current-carrying wires. The wires are fabricated on a Si wafer (with a 40 nm SiO2 layer) using 1.2 μm thick Au and a 20 nm thick adhesion layer, and are patterned with lift-off photolithography. We characterize the number and temperature of the cold atoms trapped by the chip.

Adhesion in Metal-Ceramic Systems

1993 ◽  
Vol 308 ◽  
Author(s):  
Shankar K. Venkataraman ◽  
William W. Gerberich ◽  
David L. Kohlstedt
Keyword(s):  
Film Thickness ◽  
Practical Work ◽  
Work Of Adhesion ◽  
Order Estimate ◽  
First Order ◽  
A Value ◽  
Diamond Indenter ◽  
Metal Ceramic ◽  
Sputter Deposited ◽  
Versus Film

ABSTRACTThe adhesion of Pt thin films to NiO substrates has been studied using the continuous microscratch technique. Films of Pt ranging from 65 to 1080 nm in thickness were sputter deposited onto single crystals of NiO. Continuous microscratch experiments were performed by driving a conical diamond indenter, with a nominal radius of 5 μm, simultaneously into and across the film until a load drop was observed indicating that the film had delaminated. The practical work of adhesion was calculated using a theoretical model developed for metal-ceramic systems. The practical work of adhesion increases from 0.03 to 4.7 J/m2 as the film thickness increases from 65 to 1080 nm. The practical work of adhesion includes the true work of adhesion — the energy to produce two new surfaces — and terms involving the plastic deformation of the film and substrate. Extrapolation of the practical work of adhesion versus film thickness data to zero thickness yields a first order estimate of the true work of adhesion. The true work of adhesion for the as-sputtered Pt/NiO system is determined to be 0.025 J/m2, a value of the same order as the Van der Waal’s energy.

INFLUENCE OF ADHESION LAYERS ON THE SURFACE MORPHOLOGY OF PLATINUM-BASED BOTTOM ELECTRODES FOR Pb(Zr,Ti)O3 THIN FILMS

2011 ◽  
Vol 18 (01n02) ◽  
pp. 47-51 ◽  
Author(s):  
NGUYEN THANH HUY ◽  
VU NGOC HUNG
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Si Substrate ◽  
Post Deposition Annealing ◽  
Adhesion Layer ◽  
Pt Electrode ◽  
Pzt Thin Films ◽  
Hillock Formation ◽  
Post Deposition ◽  
Si Wafer

A thin adhesion layer is required to glue Pt bottom electrodes of ferroelectric Pb(Zr,Ti)O 3 thin films to a SiO 2/ Si wafer. Here we report the effect of adhesion layers, Ti and TiO 2, on the crystalline structure and surface properties of Pt electrode. The results show that the hillock formation is observed for the case of Ti glue layer, while the surface of Pt layer is flat and uniform with TiO 2 layer used instead. The crystallization in PZT thin films on Pt / TiO 2/ SiO 2/ Si substrate is investigated during post-deposition annealing. The perovskite phase is completely formed in the film annealed at 650°C for one hour.

A standard for transmission electron spectroscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 530-531 ◽  
Author(s):  
Dennis Maher ◽  
David Joy ◽  
Peggy Mochel
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Host Lattice ◽  
Single Element ◽  
Multicomponent Systems ◽  
Transmission Electron ◽  
Major Interest ◽  
Standard Specimens ◽  
Forms Of Carbon ◽  
Electron Energy Loss

A variety of standard specimens is needed in order to systematically investigate the instrumentation, specimen, data reduction and quantitation variables in electron energy-loss spectroscopy (EELS). Pure single element specimens (e.g. various forms of carbon) have received considerable attention to date but certain elements of interest cannot be prepared directly as thin films. Since studies of the first and second row elements in two- or multicomponent systems will be of considerable importance in microanalysis using EELS, there is a need for convenient standards containing these species. For many investigations a standard should contain the desired element, or elements, homogeneously dispersed through a suitable matrix and at an accurately known concentration. These conditions may be met by the technique of implantation.Silicon was chosen as the host lattice since its principal ionization energies, EL23 = 98 eV and Ek = 1843 eV, are well removed from the K-edges of most elements of major interest such as boron (Ek = 188 eV), carbon (Ek = 283 eV), nitrogen (Ek = 400 eV) and oxygen (Ek = 532 eV).

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