scholarly journals Growth Peculiarities and Properties of KR3F10 (R = Y, Tb) Single Crystals

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 285
Author(s):  
Denis N. Karimov ◽  
Irina I. Buchinskaya ◽  
Natalia A. Arkharova ◽  
Anna G. Ivanova ◽  
Alexander G. Savelyev ◽  
...  

Cubic KR3F10 (R = Y, Tb) single crystals have been successfully grown using the Bridgman technique. Growth of crystals of this type is complicated due to the hygroscopicity of potassium fluoride and melt overheating. The solution to the problem of oxygen-incorporated impurities has been demonstrated through the utilization of potassium hydrofluoride as a precursor. In this study, the crystal quality, structure features, and optical, thermal and electrophysical properties of KR3F10 were examined. Data on the temperature dependences of conductivity properties of KTb3F10 crystals were obtained for the first time. These crystals indicated thermal conductivity equal to 1.54 ± 0.05 Wm−1K−1 at room temperature caused by strong phonon scattering in the Tb-based crystal lattice. Ionic conductivities of KY3F10 and KTb3F10 single crystals were 4.9 × 10−8 and 1.2 × 10−10 S/cm at 500 K, respectively, and the observed difference was determined by the activation enthalpy of F− ion migration. Comparison of the physical properties of the grown KR3F10 crystals with the closest crystalline analog from the family of Na0.5−xR0.5+xF2+2x (R = Tb, Y) cubic solid solutions is reported.

2019 ◽  
Vol 7 (36) ◽  
pp. 11085-11089
Author(s):  
Iwona Lazar ◽  
Monika Oboz ◽  
Jerzy Kubacki ◽  
Andrzej Majchrowski ◽  
Julita Piecha ◽  
...  

For the first time, a weak ferromagnetic hysteresis loop at room temperature has been observed in PbZr1−xTixO3 (PZT) single crystals.


1989 ◽  
Vol 03 (04) ◽  
pp. 295-299 ◽  
Author(s):  
G.H. CHEN ◽  
J.H. WANG ◽  
D.N. ZHENG ◽  
Y.F. YAN ◽  
S.L. JIA ◽  
...  

The thermopower in single crystals of the high T c superconductor Bi 2 Sr 2 CaCu 2 O y has been measured in both a-b plane (S ab ) and along c axis (Sc) respectively. The temperature dependences are distinctly anisotropic. S c increases monotonously with temperature and is positive from T c to room temperature, while S ab increases rapidly near T c and then decreases with temperature. The maximum of S ab is at 115 K and S ab changes its sign at 250 K.


2018 ◽  
Vol 32 (01) ◽  
pp. 1750367 ◽  
Author(s):  
G. Ya. Khadzhai ◽  
R. V. Vovk ◽  
N. R. Vovk ◽  
Yu. I. Boiko ◽  
S. N. Kamchatnaya ◽  
...  

The effects of quenching from 600[Formula: see text]C and subsequent room-temperature annealing on the basal-plane electrical resistivity of underdoped HoBa2Cu3O[Formula: see text] single crystals are investigated. Regions with different superconducting transition temperatures, [Formula: see text], have been revealed in the sample after quenching and attributed to a non-uniform distribution of the labile oxygen in the sample volume. Room-temperature annealing has been revealed to lead to an increase of [Formula: see text] of all regions and a decrease of their number, attributed to the coalescence of clusters of oxygen vacancies. The temperature dependence of the resistance in the normal state is characterized by a decrease of the residual resistivity and the phonon scattering coefficient.


CrystEngComm ◽  
2019 ◽  
Vol 21 (4) ◽  
pp. 656-661 ◽  
Author(s):  
Pronoy Nandi ◽  
Chandan Giri ◽  
Diptikanta Swain ◽  
U. Manju ◽  
Dinesh Topwal

Rectangular shaped, high crystalline quality, defect free and colorless 3D perovskite single crystals of CH3NH3PbCl3 were grown using the solvent evaporation method at room temperature for the first time.


1982 ◽  
Vol 35 (1) ◽  
pp. 211 ◽  
Author(s):  
SP Basavaraju ◽  
N Devaraj ◽  
A Indumathy ◽  
KR Sridharan ◽  
J Ramakrishna

Chlorine-35 n.q.r, has been observed for the first time in 6-chloropyridin-2-ol and its temperature dependence has been studied from 77 K to room temperature. The torsional frequencies and their temperature dependences have been calculated by using Bayer's theory with and without Tatsuzaki's modification.


1992 ◽  
Vol 242 ◽  
Author(s):  
Mitsugu Yamanaka ◽  
Keiko Ikoma

ABSTRACT3C-SiC layers were grown on Si(111) substrates by chemical vapor deposition (CVD) using SiH4-CH3CI-H2 gas mixture. 3C-SiC(111) heteroepitaxial layers were obtained with smooth surfaces and reduced warpage. All the epilayers were n- type, and the carrier density and Hall mobility were 2.1×1016∼2.8×1017 cm-3 and 120∼180 cm2/Vs at room temperature, respectively. Temperature dependences of the electrical properties of the self-supported 3C-SiC(111) epilayers were measured between 15 and 300 K for the first time. 3C-SiC(111) epilayers showed a similar temperature dependence of carrier density to 3C-SiC(001) heteroepitaxial layer. Hall mobility was maximum (∼360 cm2/Vs) around 100 K.


1992 ◽  
Vol 06 (03) ◽  
pp. 177-181 ◽  
Author(s):  
BORIS V. ANDREEV ◽  
VLADIMIR N. EFIMOV

The study of radiation paramagnetic centres (RPC) arising in flux-grown KTiOPO 4 (KTP) single crystals at X-ray-irradiation at 300 K was conducted by the ESR-method in the temperature range of 3.7÷300 K . For the first time in X-ray-irradiated KTP there were found electron and hole RPC stable at room temperature and related to Ti 3+ and Al 3+ impurity, respectively.


1967 ◽  
Vol 45 (2) ◽  
pp. 1101-1120 ◽  
Author(s):  
A. S. Keh ◽  
Y. Nakada

Results accumulated in the past four years on the plastic deformation of iron single crystals are summarized.The work-hardening behavior of iron single crystals depends very much on orientation and temperature. At room temperature, three-stage hardening was observed for single-slip orientations. The work-hardening rates in stages I and II were correlated with the extent of localized secondary slip.Latent hardening was observed in iron crystals. The latent-hardening ratio is about 1.3 and is relatively independent of temperature and choice of latent system.The yield stress of iron single crystals is very dependent on temperature and is also sensitive to orientation at low temperatures and to interstitial content at all temperatures. By adding interstitials to purified crystals, the athermal portion of the flow stress of iron is raised, but its temperature dependence is not altered. Crystals oriented for single slip on the (101) and (112) planes have different temperature dependences of the proportional limit. Similar but small differences in this temperature dependence of proportional limits were observed in crystals oriented for single, double, and multiple slip on {112} planes. These results are explained on the basis of a Peierls mechanism.


IUCrData ◽  
2019 ◽  
Vol 4 (12) ◽  
Author(s):  
Benedict N. Leidecker ◽  
Christoph Kubis ◽  
Anke Spannenberg ◽  
Robert Franke ◽  
Armin Börner

The crystal structure of the benzene monosolvate of the well known organic diphosphite ligand BIPHEPHOS, C46H44O8P2·C6H6, is reported for the first time. Single crystals of BIPHEPHOS were obtained from a benzene solution after layering with n-heptane at room temperature. One specific property of this type of diphosphite structure is the twisting of the biphenyl units. In the crystal, C—H...π contacts and π–π stacking interactions [centroid-to-centroid distance = 3.8941 (15) Å] are observed.


2021 ◽  
Vol 2 (4) ◽  
pp. 511-526
Author(s):  
Nikolay Sidorenko ◽  
Yaakov Unigovski ◽  
Zinovi Dashevsky ◽  
Roni Shneck

A unique method was developed to significantly improve the strength of Bi(1−x)Sbx single crystals, the most effective thermoelectric (TE) materials in the temperature range from 100 to 200 K due to their plastic deformation by extrusion. After plastic deformation at room temperature under all-round hydrostatic compression in a liquid medium, n-type Bi–Sb polycrystalline solid solutions show a significant increase in mechanical strength compared to Bi–Sb single crystals in the temperature range from 300 to 80 K. The significantly higher strength of extruded alloys in comparison with Bi–Sb single crystals is associated with the development of numerous grains with a high boundary surface as well as structural defects, such as dislocations, that accumulate at grain boundaries. Significant stability of the structure of extruded samples is achieved due to the uniformity of crystal plastic deformation under all-round hydrostatic compression and the formation of the polycrystalline structure consisting of grains with the orientation of the main crystallographic directions close to the original single crystal. The strengthening of Bi–Sb single crystals after plastic deformation allows for the first time to create workable TE devices that cannot be created on the basis of single crystals that have excellent TE properties, but low strength.


Sign in / Sign up

Export Citation Format

Share Document