scholarly journals 1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance

Crystals ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 980
Author(s):  
Xia-Yida MaXueer ◽  
Yi-Ming He ◽  
Zun-Ren Lv ◽  
Zhong-Kai Zhang ◽  
Hong-Yu Chai ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Speed ◽  
Optical Feedback ◽  
Maximum Output Power ◽  
Threshold Current ◽  
Maximum Output ◽  
Large Signal ◽  
Direct Modulation ◽  
Modulation Rate ◽  
Gaas Quantum Dot

Aiming to realize high-speed optical transmitters for isolator-free telecommunication systems, 1.3 μm p-modulation doped InGaAs/GaAs quantum dot (QD) lasers with a 400 μm long cavity have been reported. Compared with the un-doped QD laser as a reference, the p-doped QD laser emits at ground state, with an ultra-low threshold current and a high maximum output power. The p-doped QD laser also shows enhanced dynamic characteristics, with a 10 Gb/s large-signal direct modulation rate and a 7.8 GHz 3dB-bandwidth. In addition, the p-doped QD laser exhibits a strong coherent optical feedback resistance, which might be beyond −9 dB.

Temperature-Stable 25-Gbps Direct-Modulation in 1.3-μm InAs/GaAs Quantum Dot Lasers

2012 ◽  
Author(s):  
Mitsuru Ishida ◽  
Manabu Matsuda ◽  
Yu Tanaka ◽  
Kan Takada ◽  
Mitsuru Ekawa ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Direct Modulation ◽  
Gaas Quantum Dot

scholarly journals Optimized High Performance Characteristics of a designed 450 nm InGaN/AlGaN True Blue Laser Considering Different Injection Current

2020 ◽  
Vol 16 (2) ◽  
Author(s):  
Sayed Muhammod Baker ◽  
Rinku Basak
Keyword(s):  
High Performance ◽  
Maximum Output Power ◽  
Threshold Current ◽  
Injection Current ◽  
Blue Laser ◽  
Performance Characteristics ◽  
Maximum Output ◽  
Modulation Bandwidth ◽  
True Blue ◽  
Material Gain

In this work, the effects on the performance characteristics of a In0.1558Ga0.8442N / Al0.0416Ga0.9584N 3QW separate confinement heterostrcture 450 nm true blue edgeemitting laser are presented by considering different injection current. At the temperature of 300 K, the threshold current of the laser is 11 mA. The peak material gain for the designed laser is obtained as 1106 cm-1 and further used for the analysis of the performance characteristics of the designed doubleheterostructure laser for the variation of injection current. The injection current can be applied to the device is at around 12 to 15 times of the threshold current. At the value of injection current 152 mA, the maximum output power of the laser is 256.4 mW, the maximum resonance frequency is 14.5 GHz and the corresponding modulation bandwidth is 25.3 GHz at the temperature of 300 K.

scholarly journals Analytical and Simulation Fair Comparison of Three Level Si IGBT Based NPC Topologies and Two Level SiC MOSFET Based Topology for High Speed Drives

Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4571 ◽  
Author(s):  
Jelena Loncarski ◽  
Vito Giuseppe Monopoli ◽  
Riccardo Leuzzi ◽  
Leposava Ristic ◽  
Francesco Cupertino
Keyword(s):  
Output Power ◽  
Heat Sink ◽  
High Speed ◽  
Dynamic Models ◽  
Maximum Output Power ◽  
Life Time ◽  
Experimental Tests ◽  
Oxide Semiconductor ◽  
Maximum Output ◽  
Fair Comparison

Wide bandgap (WBG) power devices such as silicon carbide (SiC) can viably supply high speed electrical drives, due to their capability to increase efficiency and reduce the size of the power converters. On the other hand, high frequency operation of the SiC devices emphasizes the effect of parasitics, which generates reflected wave transient overvoltage on motor terminals, reducing the life time and the reliability of electric drives. In this paper, a SiC metal-oxide-semiconductor field-effect transistor (MOSFET) based two level (2L) inverter is systematically studied and compared to the performance of Si insulated-gate bipolar transistor (IGBT) based three level (3L) neutral point clamped (NPC) inverter topologies, for high speed AC motor loads, in terms of efficiency, overvoltages, heat sink design, and cost. A fair comparison was introduced for the first time, having the same output voltage capabilities, output current total harmonic distortion (THD), and overvoltages for the three systems. The analysis indicated the convenience of using the SiC MOSFET based 2L inverter for lower output power. In the case of the maximum output power, the heat sink volume was found to be 20% higher for the 2L SiC based inverter when compared to 3L NPC topologies. Simulations were carried out by realistic dynamic models of power switch modules obtained from the manufacturer’s experimental tests and verified both in the LTspice and PLECS simulation packages.

High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Razeghi ◽  
J. Diaz ◽  
H. J. Yi ◽  
D. Wu ◽  
B. Lane ◽  
...  
Keyword(s):  
Active Region ◽  
Energy Gap ◽  
Maximum Output Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Double Heterostructure

ABSTRACTWe report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

scholarly journals High-Speed and High-Power 940 nm Flip-Chip VCSEL Array for LiDAR Application

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1237
Author(s):  
Kuo-Bin Hong ◽  
Wei-Ta Huang ◽  
Hsin-Chan Chung ◽  
Guan-Hao Chang ◽  
Dong Yang ◽  
...  
Keyword(s):  
High Power ◽  
High Speed ◽  
Flip Chip ◽  
Maximum Output Power ◽  
Thermal Characteristics ◽  
Cavity Surface ◽  
Maximum Output ◽  
Two Samples ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser

In this paper, we demonstrate the design and fabrication of a high-power, high-speed flip-chip vertical cavity surface emitting laser (VCSEL) for light detection and ranging (LiDAR) systems. The optoelectronic characteristics and modulation speeds of vertical and flip-chip VCSELs were investigated numerically and experimentally. The thermal transport properties of the two samples were also numerically investigated. The measured maximum output power, slope efficiency (SE) and power conversion efficiency (PCE) of a fabricated flip-chip VCSEL array operated at room-temperature were 6.2 W, 1.11 W/A and 46.1%, respectively. The measured L-I-V curves demonstrated that the flip-chip architecture offers better thermal characteristics than the conventional vertical structure, especially for high-temperature operation. The rise time of the flip-chip VCSEL array was 218.5 ps, and the architecture of the flip-chip VCSEL with tunnel junction was chosen to accommodate the application of long-range LiDAR. The calculated PCE of such a flip-chip VCSEL was further improved from 51% to 57.8%. The device design concept and forecasting laser characteristics are suitable for LiDAR systems.

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