scholarly journals Grating Coupler Design for Vertical Light Coupling in Silicon Thin Films on Lithium Niobate

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 850
Author(s):  
Huangpu Han ◽  
Bingxi Xiang
Keyword(s):  
Lithium Niobate ◽  
High Efficiency ◽  
Grating Period ◽  
Grating Coupler ◽  
Silicon Thin Film ◽  
Cladding Layer ◽  
Silicon Thin Films ◽  
Light Coupling ◽  
Mismatch Loss ◽  
Fiber Position

In this paper we provide a design for a vertical grating coupler for a silicon thin film on lithium niobate. The parameters-such as the cladding layer thickness of lithium niobate, fiber position, fiber angle, grating period, and duty cycle are analyzed and optimized to reduce the mode mismatch loss and the internal reflections. The alignment tolerances, for the grating coupler parameters, are also simulated and evaluated. We determine that our simulated grating coupler exhibits high efficiency, enhanced light coupling, and high alignment tolerance.

scholarly journals Wide Bandwidth Silicon Nitride Strip-Loaded Grating Coupler on Lithium Niobate Thin Film

Crystals ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 70
Author(s):  
Fan Yang ◽  
Hong Fang ◽  
Huangpu Han ◽  
Bingxi Xiang
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Lithium Niobate ◽  
Duty Cycle ◽  
Coupling Efficiency ◽  
Grating Period ◽  
Grating Coupler ◽  
Cladding Layer ◽  
Fiber Angle ◽  
Fiber Position

In this research, a vertical silicon nitride strip-loaded grating coupler on lithium niobate thin film was proposed, designed, and simulated. In order to improve the coupling efficiency and bandwidth, the parameters such as the SiO2 cladding layer thickness, grating period, duty cycle, fiber position, and fiber angle were optimized and analyzed. The alignment tolerances of the grating coupler parameters were also calculated. The maximum coupling efficiency and the −3 dB bandwidth were optimized to 33.5% and 113 nm, respectively. In addition, the grating coupler exhibited a high alignment tolerance.

scholarly journals An Ultra-High-Q Lithium Niobate Microresonator Integrated with a Silicon Nitride Waveguide in the Vertical Configuration for Evanescent Light Coupling

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 235
Author(s):  
Jianhao Zhang ◽  
Rongbo Wu ◽  
Min Wang ◽  
Youting Liang ◽  
Junxia Zhou ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Lithium Niobate ◽  
Focused Ion Beam ◽  
Ring Resonator ◽  
Ion Beam ◽  
Fused Silica ◽  
Microring Resonator ◽  
Cladding Layer ◽  
Light Coupling ◽  
Integrated Device

We demonstrate the hybrid integration of a lithium niobate microring resonator with a silicon nitride waveguide in the vertical configuration to achieve efficient light coupling. The microring resonator is fabricated on a lithium niobate on insulator (LNOI) substrate using photolithography assisted chemo-mechanical etching (PLACE). A fused silica cladding layer is deposited on the LNOI ring resonator. The silicon nitride waveguide is further produced on the fused silica cladding layer by first fabricating a trench in the fused silica while using focused ion beam (FIB) etching for facilitating the evanescent coupling, followed by the formation of the silicon nitride waveguide on the bottom of the trench. The FIB etching ensures the required high positioning accuracy between the waveguide and ring resonator. We achieve Q-factors as high as 1.4 × 107 with the vertically integrated device.

scholarly journals An Ultra-high-Q lithium Niobate Microresonator Integrated with a Silicon Nitride Waveguide in the Vertical Configuration for Evanescent Light Coupling

2020 ◽  
Author(s):  
Jianhao Zhang ◽  
Rongbo Wu ◽  
Min Wang ◽  
Youting Liang ◽  
Junxia Zhou ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Lithium Niobate ◽  
Focused Ion Beam ◽  
Ring Resonator ◽  
Ion Beam ◽  
Fused Silica ◽  
Microring Resonator ◽  
Cladding Layer ◽  
Light Coupling ◽  
Integrated Device

We demonstrate hybrid integration of a lithium niobate microring resonator with a silicon nitride waveguide in the vertical configuration to achieve efficient light coupling. The microring resonator is fabricated on a lithium niobate on insulator (LNOI) substrate using photolithography assisted chemo-mechanical etching (PLACE). A fused silica cladding layer is deposited on the LNOI ring resonator. The silicon nitride waveguide is further produced on the fused silica cladding layer by first fabricating a trench in the fused silica using focused ion beam (FIB) etching for facilitating the evanescent coupling, followed by formation of the silicon nitride waveguide on the bottom of the trench. The FIB etching ensures the required high positioning accuracy between the waveguide and the ring resonator. We achieve Q-factors as high as 1.4*10^7 with the vertically integrated device.

Advanced silicon thin films for high-efficiency silicon heterojunction-based solar cells

2017 ◽  
Author(s):  
A. Descoeudres ◽  
J. Geissbiihler ◽  
J. Horzel ◽  
A. Lachowicz ◽  
J. Levrat ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
High Efficiency ◽  
Silicon Thin Films

High efficiency blazed fiber-chip grating coupler with interleaved trenches

2015 ◽  
Author(s):  
C. Alonso-Ramos ◽  
D. Benedikovic ◽  
P, Cheben ◽  
S, Wang ◽  
R, Halir ◽  
...  
Keyword(s):  
High Efficiency ◽  
Grating Coupler

Computational design of high-efficiency grating coupler based on deep learning

2019 ◽  
Author(s):  
Y. Miyatake ◽  
N. Sekine ◽  
K. Toprasertpong ◽  
S. Takagi ◽  
M. Takenaka
Keyword(s):  
Deep Learning ◽  
High Efficiency ◽  
Computational Design ◽  
Grating Coupler

scholarly journals High-efficiency diffraction grating coupler for multimode optical interconnect

2006 ◽  
Author(s):  
Janyce Franc ◽  
Nathalie Destouches ◽  
Danièle Blanc ◽  
Jean-Claude Pommier ◽  
Svetlen Tonchev ◽  
...  
Keyword(s):  
Diffraction Grating ◽  
High Efficiency ◽  
Optical Interconnect ◽  
Grating Coupler

Effect of Hydrogen Coverage on Silicon Thin Film Growth: Molecular Dynamics Investigation

1999 ◽  
Vol 584 ◽  
Author(s):  
Shinya Muramatsu ◽  
Masatoshi Shimada ◽  
Masahiko Hirao
Keyword(s):  
Molecular Dynamics ◽  
Film Growth ◽  
Surface Reactions ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Reaction Conditions ◽  
Silicon Thin Films ◽  
Modified Surfaces ◽  
Elementary Surface ◽  
Dynamics Simulations

AbstractSilicon thin films grown by CVD processes take various structures depending on the reaction conditions. In the case of low-temperature CVD, hydrogen coverage on the silicon substrate affects the growth as well. In order to analyze the effect of hydrogen coverage on elementary surface reactions, we performed molecular dynamics simulations in which gasphase radicals, H and SiH3, fell onto a hydrogen-terminated silicon surface. We prepared monohydride and dihydride Si(100) surfaces and modified their hydrogen coverage in a certain area in the range from 0.5 to 2.0 monolayers so as to describe the growing surface. As a result of our simulation, H radicals mainly caused H adsorption and H abstraction reactions and altered the hydrogen coverage of the surface. While reactions of SiH3 radicals with monohydride or dihydride surfaces rarely occurred, these radicals reacted more frequently with the modified surfaces. These results indicate that the change in the local hydrogen coverage caused by H radicals may induce subsequent surface reactions

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