scholarly journals Growth of Lu2O3 and HfO2 Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma

Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 619
Author(s):  
Kyoung Jin Kim ◽  
Kei Kamada ◽  
Rikito Murakami ◽  
Takahiko Horiai ◽  
Shiori Ishikawa ◽  
...  
Keyword(s):  
Single Crystals ◽  
Arc Plasma ◽  
High Melting ◽  
High Melting Point ◽  
Rocking Curve ◽  
Heating Method ◽  
Growth Method ◽  
Transfer State ◽  
Better Than ◽  
Indirect Heating

A novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu2O3, Lu0.388Hf0.612O1.806, and Lu0.18Hf0.82O1.91, with melting points of 2460, 2900, and 2840 °C, respectively, were grown by an indirect heating method using arc plasma. We refer to this indirect heating growth method as the core heating (CH) method. The CH-grown Yb1%-doped Lu2O3 sample showed a full width at half maximum of 286 arcsec in the X-ray rocking curve. This value is better than the 393 arcsec obtained for the crystal grown by the micro-pulling-down (μ-PD) method. The Yb charge transfer state (CTS) emission was observed at 350 nm in the Yb1%-doped Lu2O3 and Lu0.18Hf0.82O1.91. In the case of the μ-PD method, using a rhenium (Re) crucible, absorption due to Re contamination and a resulting reduction in the Yb CTS emission were confirmed. However, contamination did not influence the properties observed in the crystals grown by the CH method.

Crystallinity of YBa2Cu3O7−x single crystals grown by the pulling method

1996 ◽  
Vol 11 (4) ◽  
pp. 804-812 ◽  
Author(s):  
Y. Namikawa ◽  
M. Egami ◽  
S. Koyama ◽  
Y. Shiohara ◽  
H. Kutami
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Growth Direction ◽  
Annealed Sample ◽  
Seed Crystal ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Crystal Seed ◽  
Better Than

Large YBa2Cu3O7−x (Y123) single crystals (larger than 13 mm cubed) have been grown along the c-axis reproducibly by the modified pulling method. The crystallinity of Y123 single crystal was investigated by x-ray diffraction and x-ray topography. Crystals grown from an MgO single crystal seed had some low angle subgrain boundaries which tilted 0.1–0.8° from each other. These grain boundaries originated from the seed crystal, and the subgrains were extended along the growth direction from the seed crystal. Y123 single crystals with no marked subgrains in the whole area were obtained by using Y123 single subgrain crystal seeds. FWHM of the x-ray rocking curve for the crystal so produced was about 0.14°, which was much better than the spectrum consisting of several separated peaks obtained from the previous crystals. Tc onset of the annealed sample was about 93.6 K, and the transition width was about 0.9 K. The low angle subgrain boundaries did not seem to be effective pinning centers for the magnetic flux.

Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds

2013 ◽  
Vol 740-742 ◽  
pp. 99-102 ◽  
Author(s):  
Rajappan Radhakrishnan Sumathi ◽  
Matthias Paun
Keyword(s):  
Single Crystals ◽  
Spiral Growth ◽  
Misfit Dislocations ◽  
Experimental Conditions ◽  
Bottom Part ◽  
Misfit Stress ◽  
Rocking Curve ◽  
Epma Analysis ◽  
Growth Method ◽  
Abrupt Interface

Growth of AlN single crystals using carbon-polar surface of SiC substrate by PVT growth method has been attempted. AlN growth on the carbon-face was dominated by spiral growth mode under the applied experimental conditions and further, an abrupt interface was observed between AlN layer and the substrate. Broad XRD rocking curve of the sample, taken from bottom part of the crystal, indicates a high density of misfit dislocations near the interface and further a shift of E2(high) phonon mode in the Raman measurements shows a significant misfit stress. The XRD-RC FWHM values of symmetric 002 and asymmetric 102 reflections (top part of the crystal) are 380 and 300 arcsec respectively, whereas the Raman E2(high) peak FWHM value is about 23 cm-1. Decreasing intensity of silicon and carbon LVM peaks with increasing distance from the interface represents the reduction of their incorporation along the crystal length. EPMA analysis confirms the presence of low silicon concentration of 2 wt% in these crystals grown hetero-epitaxially on SiC.

3-[(Diphenylphosphinothioyl)oxy]-N-methylpropan-1-aminium diphenylphosphanylthioate

2014 ◽  
Vol 70 (3) ◽  
pp. 320-322
Author(s):  
Merve Karaman ◽  
Sevil İrişli ◽  
Orhan Büyükgüngör
Keyword(s):  
Hydrogen Bond ◽  
Melting Point ◽  
Hydrogen Bonds ◽  
Single Crystals ◽  
Spectroscopic Methods ◽  
High Melting ◽  
Asymmetric Unit ◽  
Slow Evaporation ◽  
High Melting Point ◽  
X Ray

The title salt, C16H21NOPS+·C12H10OPS, was synthesized from the reaction between 3-(methylamino)propan-1-ol and PPh2(S)Cl in the presence of Et3N. Its structure has been identified using spectroscopic methods and X-ray analysis. Single crystals were obtained from ethanol by slow evaporation. In the asymmetric unit, a cation–anion pair is formed through an intermolecular N—H...O [N...O = 2.6974 (18) Å] hydrogen bond. The molecules are packed through N—H...O and N—H...S hydrogen bonds in the crystal and these hydrogen bonds are responsible for the high melting point. The P atoms of the anion and cation both have distorted tetrahedral environments.

scholarly journals 3,3′-Dimethyl-1,1′-methylenediimidazolium tetrabromidocobaltate(II)

IUCrData ◽  
2018 ◽  
Vol 3 (8) ◽  
Author(s):  
Tim Peppel ◽  
Anke Spannenberg
Keyword(s):  
Melting Point ◽  
Single Crystals ◽  
Dihedral Angle ◽  
Title Compound ◽  
Complex Anion ◽  
High Melting ◽  
Ambient Conditions ◽  
High Melting Point ◽  
Light Blue ◽  
Compound C

The title compound, (C9H14N4)[CoBr4], was obtained as single crystals directly in very low yield as a side product in the reaction of 1,1′-bis(1-methylimidazolium)acetate bromide and CoBr2. The title compound consists of an imidazolium-based dication and a tetrabromidocobaltate(II) complex anion, which are connected via C—H...Br interactions in the crystal. The dihedral angle between the imidazolium rings in the cation is 72.89 (16)°. The CoII ion in the anion is coordinated tetrahedrally by four bromide ligands [Co—Br = 2.4025 (5)–2.4091 (5) Å and Br—Co—Br = 106.224 (17)–113.893 (17)°]. The compound exhibits a high melting point (>300°C) and is a light-blue solid under ambient conditions.

CRM MOLYBDENUM-50 RHENIUM

Alloy Digest ◽  
1970 ◽  
Vol 19 (12) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Powder Metallurgy ◽  
Melting Point ◽  
Physical Properties ◽  
Heat Treating ◽  
Electrical Contacts ◽  
High Melting ◽  
High Melting Point ◽  
Temperature Performance

Abstract CRM MOLYBDENUM-50 RHENIUM is a high-melting-point alloy for applications such as electronics tube components, electrical contacts, thermionic converters, thermocouples, heating elements and rocket thrusters. All products are produced by powder metallurgy. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Mo-11. Producer or source: Chase Brass & Copper Company Inc..

CRM RHENIUM

Alloy Digest ◽  
1970 ◽  
Vol 19 (8) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Powder Metallurgy ◽  
Melting Point ◽  
Heat Treating ◽  
Electrical Contacts ◽  
High Melting ◽  
High Melting Point ◽  
Temperature Performance ◽  
Commercially Pure

Abstract CRM RHENIUM is a commercially pure, high-melting-point metal for applications such as electronics tube components, electrical contacts, thermionic converters, thermocouples, heating elements and rocket thrusters. All products are produced by powder metallurgy. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Re-1. Producer or source: Chase Brass & Copper Company Inc..

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