scholarly journals Enhancement of Solar Cell Performance of Electrodeposited Ti/n-Cu2O/p-Cu2O/Au Homojunction Solar Cells by Interface and Surface Modification

Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 609 ◽  
Author(s):  
Charith Jayathilaka ◽  
Loku Singgappulige Rosantha Kumara ◽  
Koji Ohara ◽  
Chulho Song ◽  
Shinji Kohara ◽  
...  
Keyword(s):  
Solar Cell ◽  
Current Density ◽  
Photoelectron Spectroscopy ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
High Energy ◽  
Open Circuit ◽  
X Ray Diffraction ◽  
Solar Cell Performance ◽  
X Ray

Cuprous oxide (Cu2O) homojunction thin films on Ti substrates were fabricated by an electrochemical deposition in which a p-Cu2O layer was deposited on an n-Cu2O layer by carefully controlled bath conditions. It was found that the open-circuit voltage of the homojunction solar cell was significantly influenced by the pH of the lactate bath. The variation of the pH was used to achieve the best possible crystal orientation for homojunctions. The crystallinity and morphology of the products were characterized by X-ray diffraction (XRD), high-energy x-ray diffraction (HEXRD), and scanning electron microscopy (SEM). The current density voltage (J-V) analysis showed that the sulfur treatment and annealing enhanced the photocurrent by ten-fold compared to the untreated and unannealed homojunction solar cell. X-ray photoelectron spectroscopy (XPS) studies confirmed that the sulfur treatment eliminated the surface CuO and formed a thin layer of CuS, which was very useful to make the front Ohmic contact. Transient measurements confirmed that the p-type Cu2O layer, which was subjected to sulfur treatment, significantly reduced the recombination, thus enhancing the efficiency of the solar cell. The best sulfur treated annealed Ti/n-Cu2O/p-Cu2O/Au solar cell produced an energy conversion efficiency of 2.64% with an open-circuit voltage of 490 mV and a short circuit current density of 12.8 mA cm−2 under AM 1.5 illumination.

Analysis of Strain Compensation in Quantum Dot Embedded GaAs Solar Cells

2007 ◽  
Vol 1031 ◽  
Author(s):  
Christopher Bailey ◽  
Cory Cress ◽  
Ryne Raffaelle ◽  
Seth Hubbard ◽  
William Maurer ◽  
...  
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
X Ray Diffraction ◽  
Solar Cell Performance ◽  
X Ray ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Strain Compensation

AbstractThe effects of strain within stacked layers of InAs quantum dots (QDs) were investigated. InAs QD test structures with and without strain compensation (SC) were analyzed using atomic force microscopy, transmission electron microscopy, and X-ray diffraction. The affects of strain compensation on test structure morphology and on GaAs-based QD solar cell performance was studied as a function of the thickness of the SC layer. X-ray diffraction analysis of the QD embedded test structures reveals a relationship between the SC thickness and the observed crystalline quality. Air mass zero illuminated current vs. voltage data and spectral responsivity measurements were used for the solar cell comparison. When SC is employed, QD insertion shows a lower open circuit voltage, in reference to a baseline device without QDs, but leads to an enhancement in the short circuit current of the device.

Surface Passivation of p-GaTe Layered Crystals for Improved p-GaTe/n-InSe Heterojunction Solar Cells

2010 ◽  
Vol 1268 ◽  
Author(s):  
Krishna C. Mandal ◽  
Sandip Das ◽  
Ramesh Krishna ◽  
Peter G. Muzykov ◽  
Shuguo Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Short Circuit ◽  
Solar Cell Performance ◽  
X Ray ◽  
Heterojunction Solar Cells

AbstractGaTe and GaTe:In single crystals were grown from high purity Ga (7N) and zone refined Te (>7N) precursor materials. InSe thin films were deposited by thermal evaporation onto the sulfur passivated GaTe:In substrates at various substrate temperatures from 450K-550K to fabricate p-GaTe:In/n-InSe heterojunction solar cells. Scanning electron microscopy (SEM), X-ray diffraction (XRD), electron probe microanalysis (EPMA), and X-ray photoelectron spectroscopy (XPS) were used to characterize GaTe:In crystals and InSe thin film surfaces. The current-voltage characteristics of p-GaTe:In/n-InSe solar cells were measured under dark and under illumination of 75mW/cm2. Dark J-V measurements showed that the reverse saturation current density (J0) decreased from 3.8 x 10-6 A/cm2 to 1.5 x 10-9 A/cm2 and the ideality factor was reduced from 2.04 to 1.15 as a result of surface passivation. Under illumination of 75 mW/cm2, the open-circuit voltage (Voc) increased from 0.54V to 0.68V and short-circuit current density (Jsc) increased from 7.19 mA/cm2 to 8.65 mA/cm2 for solar cells with surface passivated GaTe:In substrates, leading to an increased solar cell efficiency of 5.03%. EPMA measurements revealed that the InSe thin films deposited at 550 K on GaTe:In substrates were near stoichiometric with enhanced grain size contributing also to better solar cell performance.

Efficiency Enhancement by Insertion of ZnO Recombination Barrier Layer in CdS Quantum Dot-Sensitized Solar Cells

2021 ◽  
Vol 21 (7) ◽  
pp. 3800-3805
Author(s):  
Abdul Razzaq ◽  
Muhammad Zafar ◽  
Tahir Saif ◽  
Jun Young Lee ◽  
Jung Ki Park ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Barrier Layer ◽  
Open Circuit ◽  
X Ray Diffraction ◽  
Solar Cell Performance ◽  
X Ray ◽  
Cds Quantum Dot ◽  
Back Transfer ◽  
Photovoltaic Characteristics

In this investigation we report the formation of thin ZnO recombination barrier layer at TiO2/CdS interface aimed for the improvement in performance of CdS sensitized solar cell. The film was deposited upon nanocrystalline mesoporous TiO2 surface by following a simple chemical process and characterized, using UV-Visible spectroscopy, X-ray diffraction and electron dispersive X-ray measurements. The insertion of ZnO thin layer enhances the QDSC (Quantum dot sensitized solar cell) performance, contributed mainly by an increase in open circuit voltage (Voc) due to reduced electron back transfer from TiO2 conduction band. Moreover, the analysis of photovoltaic characteristics upon increasing the thickness of the ZnO film reveals that the ZnO recombination barrier layer with optimum thickness at porous TiO2/CdS interface proved to be an effective potential barrier for minimizing electron back recombination.

Effect of Assets of Silicon Film Passivation Layer on the Performance of Silicon Nanowire Solar Cells

2014 ◽  
Vol 633-634 ◽  
pp. 509-512
Author(s):  
Ping Yang ◽  
Xiang Bo Zeng ◽  
Xiao Dong Zhang ◽  
Zhan Guo Wang
Keyword(s):  
Solar Cell ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Silicon Film ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Passivation Layer ◽  
Hydrogen Dilution

Silicon film as a surface passivation layer is reported to reduce surface recombination on silicon nanowires (SiNWs) and thus enable to improve SiNW solar cell (SC) performance. A question yet to be answered regards the link between the silicon film assets and the solar cell performances. We investigated the effect of the properties of silicon films on the SiNWs SC performances by adjusting hydrogen dilution. Our results showed that the open-circuit voltage (Voc) and short-circuit current density (Jsc) of SiNWs SC increase until hydrogen dilution 10 and then decrease. An open-circuit voltage of 0.397 V and short-circuit current density of 18.42 mA/cm2 are achieved at optimized hydrogen dilution. Based on the analysis of silicon film properties we proposed that the increase of defect density with hydrogen dilution was the main cause for the deterioration of SiNWs SC performance.

An Investigation on Dye-Sensitized Solar Cell Performance Influenced by Radiant Intensity and Illuminated Area in Concentrating Photovoltaic System

2014 ◽  
Vol 1070-1072 ◽  
pp. 616-619
Author(s):  
Wen Bo Xiao ◽  
Jin Dai ◽  
Guo Hua Tu ◽  
Hua Ming Wu
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Photovoltaic System ◽  
Dye Sensitized Solar Cell ◽  
Solar Cell Performance ◽  
Radiant Intensity ◽  
Dye Sensitized

The dye-sensitized solar cell performances influenced by radiant intensity and illuminated area in concentrating photovoltaic system are investigated experimentally and discussed theoretically. The results show that, under the same irradiated cells area, the short-circuit current is linearly increasing with the radiant intensity and the open-circuit voltage follows a logarithmic function of the radiant intensity. And, it is turned out that the short-circuit current and open-circuit voltage are obviously enhanced by increasing the illuminated cells surface area at the same radiant intensity. However, that growth trends will decline with an increase of the illuminated area. The reason is more defects involved in the process of increasing illumination area. All results can be interpreted using an equivalent circuit of a single diode model. A good agreement can be observed from the fitting curves. It is of great significance for current photovoltaic research.

Fabrication of TiO2 Nanotubes Array by Anodization for DSSC

2013 ◽  
Vol 743-744 ◽  
pp. 920-925
Author(s):  
Hong Zhou Yan ◽  
Jun You Yang ◽  
Shuang Long Feng ◽  
Ming Liu ◽  
Jiang Ying Peng ◽  
...  
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray

TiO2 nanotubes array was fabricated by anodization. Effect of reaction duration on the morphology of TiO2 nanotube arrays was studied detailedly. The structure and morphology of the prepared nanotubes array was characterized by X-ray diffraction and scanning electron microscopy, respectively. The fabricated TiO2 arrays were peeled off and adhered to FTO glass with adhesive (mixture of tetrabutyl titanate and polyethylene glycol), then they were sintered at 450 for photoanode of DSSC. The photovoltaic performance of the prepared sample as the DSSC anode was investigated. An open circuit voltage of 0.69V and a short circuit current density of 7.78mA/cm2 were obtained, and the fill factor and the convert efficiency were 0.517 and 2.78%, respectively.

scholarly journals Dependence of material properties and photovoltaic performance of triple cation tin perovskites on the iodide to bromide ratio

2019 ◽  
Vol 150 (11) ◽  
pp. 1921-1927 ◽  
Author(s):  
Stefan Weber ◽  
Thomas Rath ◽  
Birgit Kunert ◽  
Roland Resel ◽  
Theodoros Dimopoulos ◽  
...  
Keyword(s):  
Material Properties ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
X Ray Diffraction ◽  
X Ray

Abstract In this work, the influence of a partial introduction of bromide (x = 0–0.33) into MA0.75FA0.15PEA0.1Sn(BrxI1−x)3 (MA: methylammonium, FA: formamidinium, PEA: phenylethylammonium) triple cation tin perovskite on the material properties and photovoltaic performance is investigated and characterized. The introduction of bromide shifts the optical band gap of the perovskite films from 1.29 eV for the iodide-based perovskite to 1.50 eV for the perovskite with a bromide content of x = 0.33. X-ray diffraction measurements reveal that the size of the unit cell is also gradually reduced based on the incorporation of bromide. Regarding the photovoltaic performance of the perovskite films, it is shown that already small amounts of bromide (x = 0.08) in the perovskite system increase the open circuit voltage, short circuit current density and fill factor. The maximum power conversion efficiency of 4.63% was obtained with a bromide content of x = 0.25, which can be ascribed to the formation of homogeneous thin films in combination with higher values of the open circuit voltage. Upon introduction of a higher amount of bromide (x = 0.33), the perovskite absorber layers form pinholes, thus reducing the overall device performance. Graphic abstract

A Heterojunction Film Solar Cell of Glass/ITO/CdS/PbS/Al

2012 ◽  
Vol 569 ◽  
pp. 176-179
Author(s):  
Peng Wang ◽  
Li Bo Fan ◽  
Li Juan Sun ◽  
Zhen Hua Zhang ◽  
Xin Bing Zhu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Near Infrared ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
High Energy ◽  
Open Circuit ◽  
Special Treatment ◽  
Cds Film

A film solar cell was made with a structure of Glass/ITO/CdS/PbS/Al. CdS film was obtained by thermal evaporation. PbS film was prepared by a simple solid-solid reaction. The solar cells are photosensitive in a large spectral range (extending from near infrared to high energy side regions). The cell with the area of 0.15 cm2 without any special treatment has shown the values of open-circuit voltage (Voc) of 138 mV and short circuit current (Jsc) of 0.01 mA/cm2 with the efficiency of 0.33 % and the fill factor (FF) is 0.26 under illumination intensity of 100 mW/cm2.

Porous Silicon Antireflection Coating for Solar Cells Using Chemical Etching in HF-FeCl3-H2O

2016 ◽  
Vol 22 ◽  
pp. 1-6 ◽  
Author(s):  
Rachid Chaoui ◽  
Bedra Mahmoudi ◽  
Yasmine Si Ahmed
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Relative Improvement ◽  
Cell Conversion

Stain etching of silicon solar cells in HF-FeCl3-H2O solutions as a last step in the processing sequence is reported. The etching was carried out without protecting the screen printed contacts. Following optimization of the solution composition and using very short etching times to alleviate the contact degradation problem, the solar cell weighted reflectance (Rw) between 400 and 1100 nm could be reduced from 38.23% to 11.54%. For the best small area cell (~20 cm2), the PS antireflective layer led to a relative improvement of 62.74% in the short-circuit current density, the FF was enhanced by 5.5% absolute, the open-circuit voltage was increased by 1.2 mV and the cell conversion efficiency was raised by 4.1% absolute from 5.4% to 9.5%. The best large area cell (~78 cm2) shows the following changes after porous layer formation: a relative improvement of 45.43% in the short-circuit current density, an improvement in the FF of 7.4% absolute, an increase in the open-circuit voltage by 7.5 mV and an enhancement in the cell efficiency by 4.0% absolute from 6.2% to 10.2%. This method shows a great potential for the cost-effective reduction of reflectance losses in industrial silicon solar cell manufacturing.

scholarly journals Photocurrent density and electrical properties of Bi0.5Na0.5TiO3-BaNi0.5Nb0.5O3 ceramics

2021 ◽  
Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Light Conditions ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.

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