scholarly journals Properties of N-Type GaN Thin Film with Si-Ti Codoping on a Glass Substrate

Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 582
Author(s):  
Wei-Sheng Liu ◽  
Yu-Lin Chang ◽  
Chun-Yuan Tan ◽  
Cheng-Ting Tsai ◽  
Hsing-Chun Kuo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystal Growth ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
High Electron ◽  
X Ray ◽  
Glass Substrates ◽  
Tauc Plot ◽  
Measurement Results

In this study, n-type gallium nitride (GaN) films were fabricated by a silicon–titanium (Si-Ti) codoping sputtering technique with a zinc oxide (ZnO) buffer layer on amorphous glass substrates with different post-growth annealing temperatures for optimizing the GaN crystal quality. Si-Ti-codoped n-type GaN films that were thermally annealed at 400 °C had a low thin-film resistivity of 2.6 × 10−1 Ω-cm and a high electron concentration of 6.65 × 1019 cm−3, as determined through Hall measurement. X-ray diffraction (XRD) results revealed a high (002) XRD intensity with a narrow spectral line and a full width at half maximum (FWHM) value that indicated the superior crystal growth of a hexagonal structure of the GaN thin films. In addition, photoluminescence measurement results demonstrated a near-band-edge emission at 365 nm, indicating the crystal growth of GaN thin films on glass substrates. The Burstein–Moss effect was observed in the Tauc plot results, indicating that the Fermi level inside the conduction band moves upward and thus improves the n-type properties of the GaN thin film. X-ray photoelectron spectroscopy measurement results revealed that all atoms doped into the GaN film are present and that both Si and Ti atoms bond with N atoms.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

Chemically Deposited Silver Antimony Selenide Thin Films for Photovoltaic Applications

2009 ◽  
Vol 1165 ◽  
Author(s):  
Jorge G. Garza ◽  
Sadasivan Shaji ◽  
Ana Maria Arato Tovar ◽  
Eduardo Perez Tijerina ◽  
Alan Castillo Roderiguez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Close Contact ◽  
Optical Transmittance ◽  
Halogen Lamp ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Antimony Selenide

AbstractSilver antimony selenide (AgSbSe2) thin films were prepared by heating sequentially deposited antimony sulphide (Sb2S3), silver selenide (Ag2Se) and Ag thin films in close contact with a selenium thin film. Sb2S3 thin film was prepared from chemical bath containing SbCl3 and Na2S2O3, Ag2Se from the bath containing AgNO3 and Na2SeSO3 and Se thin films from an acidified solution of Na2SeSO3, at room temperature on cleaned glass substrates. Ag thin film was deposited by vacuum thermal evaporation. The annealing temperature was varied from 300-390°C in vacuum (∼10−3 Torr) for 1 h. X-ray diffraction analysis showed the films formed at 350 °C was polycrystalline AgSb(S,Se)2 or AgSbSe2 depending on selenium thin film thickness. Morphology of these films was analyzed using Atomic Force Microscopy and Scanning Electron Microscopy. The elemental analysis was done using Energy Dispersive X-ray technique. Optical characterization of the thin films was done by optical transmittance spectra. The electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: Glass/ITO/CdS/AgSbSe2/Ag was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this PV structure showed Voc=370 mV and Jsc=0.5 mA/cm2 under illumination using a tungsten halogen lamp.

Investigation of crystal growth on (111) InSb thin films to produce high performance Hall elements

1999 ◽  
Vol 14 (1) ◽  
pp. 39-43 ◽  
Author(s):  
Toshiaki Fukunaka ◽  
Takek Matsui ◽  
Shin-ya Matsuno
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
High Performance ◽  
Flux Ratio ◽  
High Electron ◽  
High Electron Mobility ◽  
X Ray ◽  
Insb Thin Films ◽  
Electromagnetic Characteristics ◽  
Hall Elements

The crystal growth of InSb thin films on mica substrates was investigated by conventional three temperature vacuum evaporation with varied Sb/In flux ratios and temperature programming for the substrate. The Sb/In flux ratio was varied from higher than 1.0 (about 2.0 is optimum), to less than 1.0 (about 0.7 is optimum), to again much higher than 1.0 during the stages of evaporation. The electromagnetic characteristics were investigated and x-ray analysis of the films at various stages was undertaken. The films obtained contained no excess In and they were (111) highly oriented in x-ray analysis, showing high electron mobility. These films were used to prepare high performance Hall elements.

Preparation of TiFe thin Films by Pulsed Ion Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulse Width ◽  
Ion Beam ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
A Current

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.

Compositional Determination of Sputtered Tantalum—Aluminum Thin Films

1971 ◽  
Vol 25 (4) ◽  
pp. 489-493
Author(s):  
James D. Nohe ◽  
David A. Green
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Absorption ◽  
Unit Area ◽  
X Ray ◽  
Glass Substrates ◽  
Fluorescence Measurements ◽  
Before And After ◽  
Film Weight

Tantalum–aluminum thin film composition has been determined destructively by atomic absorption and nondestructively by x-ray fluorescence spectroscopy. Samples representing several compositions (20–80 at.% aluminum) and thicknesses (500–6000 Å) were sputtered on glass, graphite, and platinum substrates. The films were dissolved from the platinum substrates for the determination of aluminum by atomic absorption. The weights of tantalum per unit area obtained by difference using this destructive technique were applied to the same samples on glass substrates for correlation with nondestructive x-ray fluorescence measurements. A linear curve, which is free from enhancement and absorption effects, is obtained for tantalum. This curve relates the nondestructive fluorescence intensities to film weights (µg/cm2) of tantalum. The composition of the film is determined nondestructively by utilizing this curve and the total film weight which is obtained by weighing the substrate before and after sputtering. Alternately, composition may be determined destructively by atomic absorption utilizing films dissolved from platinum substrates

scholarly journals Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
C. C. Huang ◽  
B. Gholipour ◽  
K. Knight ◽  
J. Y. Ou ◽  
D. W. Hewak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Chemical Vapour ◽  
Memory Device ◽  
X Ray ◽  
Glass Substrates ◽  
Xrd Techniques ◽  
Change Memory

Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875°C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase-change switching demonstrated electrically, with a threshold voltage of 2.2–2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.

scholarly journals Production of ZnO and CdO-ZnO thin Films by Extraction–Pyrolytic Method

2016 ◽  
Vol 53 (3) ◽  
pp. 57-66
Author(s):  
A. Cvetkovs ◽  
O. Kiselova ◽  
U. Rogulis ◽  
V. Serga ◽  
R. Ignatans
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Quartz Glass ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Average Size

Abstract The extraction-pyrolytic method has been applied to produce the ZnO and CdO-ZnO thin films on glass and quartz glass substrates. According to X-ray diffraction measurements, the ZnO and CdO phases have been produced with an average size of crystallites about 8–42 nm in the films. The thickness of the layers measured by a profilometer has been up to 150 nm. The surface morphology measurements show that the surface of the films may be rough and non-continuous. The SEM results confirm the dependence between the preparation procedure and the quality of the thin film.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Quantifying Multiple Crystallite Orientations and Crystal Heterogeneities in Complex Thin Film Materials

2019 ◽  
Author(s):  
Jonathan Ogle ◽  
Daniel Powell ◽  
Eric Amerling ◽  
Detlef Matthias Smilgies ◽  
Luisa Whittaker-Brooks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Design ◽  
Grazing Incidence ◽  
Crystallite Orientation ◽  
Miller Index ◽  
X Ray ◽  
X Ray Scattering ◽  
Orientation Distributions ◽  
Orientation Information

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>

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