scholarly journals Recent Advances in Novel Topological Materials

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 94
Author(s):  
Guang Bian ◽  
Tay-Rong Chang

Ever since the experimental discovery of the first 2D and 3D topological insulators, there have been intense emerging worldwide research activities in searching for and identifying new topological phases of condensed matter [...]

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Matthew J. Gilbert

AbstractWithin the broad and deep field of topological materials, there are an ever-increasing number of materials that harbor topological phases. While condensed matter physics continues to probe the exotic physical properties resulting from the existence of topological phases in new materials, there exists a suite of “well-known” topological materials in which the physical properties are well-characterized, such as Bi2Se3 and Bi2Te3. In this context, it is then appropriate to ask if the unique properties of well-explored topological materials may have a role to play in applications that form the basis of a new paradigm in information processing devices and architectures. To accomplish such a transition from physical novelty to application based material, the potential of topological materials must be disseminated beyond the reach of condensed matter to engender interest in diverse areas such as: electrical engineering, materials science, and applied physics. Accordingly, in this review, we assess the state of current electronic device applications and contemplate the future prospects of topological materials from an applied perspective. More specifically, we will review the application of topological materials to the general areas of electronic and magnetic device technologies with the goal of elucidating the potential utility of well-characterized topological materials in future information processing applications.


2013 ◽  
Vol 1 (1) ◽  
pp. 49-59 ◽  
Author(s):  
Shun-Qing Shen

Abstract The discovery of topological insulators and superconductors is an important advance in condensed matter physics. Topological phases reflect global properties of the quantum states in materials, and the boundary states are the characteristic of the materials. Such phases constitute a new branch in condensed matter physics. Here a historic development is briefly introduced, and the known family of phases in condensed matter are summarized.


2013 ◽  
Vol 27 (19) ◽  
pp. 1350107 ◽  
Author(s):  
HAI LIN ◽  
SHING-TUNG YAU

We suggest that exotic sphere fibrations can be mapped to band topologies in condensed matter systems. These fibrations can correspond to geometric phases of two double bands or state vector bases with second Chern numbers m+n and -n, respectively. They can be related to topological insulators, magnetoelectric effects, and photonic crystals with special edge states. We also consider time-reversal symmetry breaking perturbations of topological insulator, and heterostructures of topological insulators with normal insulators and with superconductors. We consider periodic TI/NI/TI/NI′ heterostructures, and periodic TI/SC/TI/SC′ heterostructures. They also give rise to models of Weyl semimetals which have thermal and electrical transports.


Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 680
Author(s):  
Artem V. Pronin

Materials with electronic bands that possess nontrivial topology have remained a focal point of condensed matter physics since 2005, when topological insulators were theoretically discovered by Kane and Mele [...]


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kyungchan Lee ◽  
Gunnar F. Lange ◽  
Lin-Lin Wang ◽  
Brinda Kuthanazhi ◽  
Thaís V. Trevisan ◽  
...  

AbstractTime reversal symmetric (TRS) invariant topological insulators (TIs) fullfil a paradigmatic role in the field of topological materials, standing at the origin of its development. Apart from TRS protected strong TIs, it was realized early on that more confounding weak topological insulators (WTI) exist. WTIs depend on translational symmetry and exhibit topological surface states only in certain directions making it significantly more difficult to match the experimental success of strong TIs. We here report on the discovery of a WTI state in RhBi2 that belongs to the optimal space group P$$\bar{1}$$ 1 ¯ , which is the only space group where symmetry indicated eigenvalues enumerate all possible invariants due to absence of additional constraining crystalline symmetries. Our ARPES, DFT calculations, and effective model reveal topological surface states with saddle points that are located in the vicinity of a Dirac point resulting in a van Hove singularity (VHS) along the (100) direction close to the Fermi energy (EF). Due to the combination of exotic features, this material offers great potential as a material platform for novel quantum effects.


2021 ◽  
Vol 4 (2) ◽  
Author(s):  
Selma Franca ◽  
Fabian Hassler ◽  
Ion Cosma Fulga

We show that scattering from the boundary of static, higher-order topological insulators (HOTIs) can be used to simulate the behavior of (time-periodic) Floquet topological insulators. We consider D-dimensional HOTIs with gapless corner states which are weakly probed by external waves in a scattering setup. We find that the unitary reflection matrix describing back-scattering from the boundary of the HOTI is topologically equivalent to a (D-1)-dimensional nontrivial Floquet operator. To characterize the topology of the reflection matrix, we introduce the concept of `nested' scattering matrices. Our results provide a route to engineer topological Floquet systems in the lab without the need for external driving. As benefit, the topological system does not suffer from decoherence and heating.


2019 ◽  
Vol 48 (9) ◽  
pp. 2861-2871 ◽  
Author(s):  
Lukas Spree ◽  
Alexey A. Popov

Encapsulation of dysprosium ions in fullerenes results in efficient air stable single molecule magnets, which can be used in preparation of various 1D, 2D, and 3D assemblies.


2020 ◽  
Vol 102 (20) ◽  
Author(s):  
Thanh-Mai Thi Tran ◽  
Duc-Anh Le ◽  
Tuan-Minh Pham ◽  
Kim-Thanh Thi Nguyen ◽  
Minh-Tien Tran

Sign in / Sign up

Export Citation Format

Share Document