scholarly journals On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis

Crystals ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 34
Author(s):  
Chun-An Chen ◽  
Yu-Ting Hsu ◽  
Wen-How Lan ◽  
Kai-Feng Huang ◽  
Kuo-Jen Chang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Nitrogen Content ◽  
Spray Pyrolysis ◽  
Film Surface ◽  
Magnesium Nitrate ◽  
Injection Current ◽  
Light Spectrum ◽  
High Concentration ◽  
Magnesium Zinc Oxide ◽  
Optimal Injection

Diodes with an erbium and nitrogen codoped magnesium zinc oxide (MgZnO:Er,N) active layer were fabricated by spray pyrolysis on Si substrate with aqueous solutions including magnesium nitrate, zinc acetate, erbium acetate, ammonium acetate, and indium nitrate precursors. Diodes with different nitrogen content in their precursor were prepared and their properties were investigated. With scanning electron microscopy, film surface with mixed hexagonal flakes and tiny blocks was characterized for all samples. Certain morphologies varied for samples with different N contents. In the photoluminescence analyses, the intensity of the oxygen-related defects peak increased with the increasing of nitrogen content. The diodes were fabricated with an Au and In deposition on the top and backside. The diode current–voltage as well as capacitance–voltage characteristics were examined. An ununiformed n-type concentration distribution with high concentration near the interface in the MgZnO:Er,N layer was characterized for all samples. Diodes with high nitrogen content exhibit reduced breakdown voltage and higher interface concentration characteristics. Under reversed bias conditions with an injection current of 50 mA, a light spectrum with two distinct green emissions around wavelengths 532 and 553 nm was observed. A small spectrum variation was characterized for diodes prepared from different nitrogen content. The diode luminescence characteristics were examined and the diode prepared from N/Zn=1 in the precursor showed an optimal injection current-to-luminescence property. The current and luminescence properties of the diode were characterized and discussed.

scholarly journals Thickness Study of Er-Doped Magnesium Zinc Oxide Diode by Spray Pyrolysis

Crystals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 454 ◽  
Author(s):  
Yu-Ting Hsu ◽  
Che-Chi Lee ◽  
Wen-How Lan ◽  
Kai-Feng Huang ◽  
Kuo-Jen Chang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Light Intensity ◽  
Surface Morphology ◽  
Spray Pyrolysis ◽  
Green Light ◽  
Oxide Thickness ◽  
Magnesium Nitrate ◽  
Light Spectrum ◽  
Magnesium Zinc Oxide ◽  
Erbium Doped

Erbium-doped magnesium zinc oxides were prepared through spray pyrolysis deposition at 450 °C with an aqueous solution containing magnesium nitrate, zinc acetate, erbium acetate, and indium nitrate precursors. Diodes with different erbium-doped magnesium zinc oxide thicknesses were fabricated. The effect of erbium-doped magnesium zinc oxide was investigated. The crystalline structure and surface morphology were analyzed using X-ray diffraction and scanning electron microscopy. The films exhibited a zinc oxide structure, with (002), (101), and (102) planes and tiny rods in a mixed hexagonal flakes surface morphology. With the photoluminescence analyses, defect states were identified. The diodes were fabricated via a metallization process in which the top contact was Au and the bottom contact was In. The current–voltage characteristics of these diodes were characterized. The structure resistance increased with the increase in erbium-doped magnesium zinc oxide thickness. With a reverse bias in excess of 8 V, the light spectrum, with two distinct green light emissions at wavelengths of 532 nm and 553 nm, was observed. The light intensity that resulted when using a different operation current of the diodes was investigated. The diode with an erbium-doped magnesium zinc oxide thickness of 230 nm shows high light intensity with an operational current of 80 mA. The emission spectrum with different injection currents for the diodes was characterized and the mechanism is discussed.

Electrical study of indium doped magnesium zinc oxide by spray pyrolysis

2015 ◽  
Author(s):  
TzuYang Lin ◽  
WeiHsuan Hsu ◽  
ChunYi Lee ◽  
ShengChung Huang ◽  
YuXuan Ding ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Magnesium Zinc Oxide ◽  
Electrical Study

Conductivity Study of Nitrogen-Doped Magnesium Zinc Oxide Prepared by Spray Pyrolysis

2015 ◽  
Vol 4 (3) ◽  
pp. 223-226 ◽  
Author(s):  
Tzu-Yang Lin ◽  
Yu-Ting Hsu ◽  
Lung-Chien Chen ◽  
Mu-Chun Wang ◽  
Wei-Hsuan Hsu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Magnesium Zinc Oxide ◽  
Nitrogen Doped

Piezoelectric zinc oxide by electrostatic spray pyrolysis

2006 ◽  
Vol 37 (11) ◽  
pp. 1276-1279 ◽  
Author(s):  
D. Zaouk ◽  
Y. Zaatar ◽  
R. Asmar ◽  
J. Jabbour
Keyword(s):  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Electrostatic Spray Pyrolysis ◽  
Electrostatic Spray

Morphological, Structural, Electrical and Optical Properties of Copper-Doped Zinc Oxide Films Deposited by Spray Pyrolysis

2018 ◽  
Vol 930 ◽  
pp. 79-84
Author(s):  
Juliana Simões Chagas Licurgo ◽  
Herval Ramos Paes Junior
Keyword(s):  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Electrical Characterization ◽  
Xrd Analysis ◽  
Band Gap Energy ◽  
Hexagonal Structure ◽  
Material Behavior ◽  
Glass Substrates ◽  
Zinc Oxide Films

In this work, copper-doped zinc oxide films (ZnO:Cu) were deposited by spray pyrolysis on glass substrates. The influence of doping concentration (0-10 at.%) on morphological, structural, optical and electrical properties of the ZnO:Cu films was investigated. Electrical characterization consisted in measuring the variation of electrical conductivity with temperature; they presented a typical semiconductor material behavior. Based on x-ray diffraction (XRD) analysis, it was able to confirm that the films are polycrystalline having a wurtzite hexagonal structure, preferentially oriented in the c-axis (002), and the crystallite size ranged from 41.60 to 50.70 nm. The optical characterization revealed that ZnO:Cu films present band gap energy between 3.18 and 3.27 eV. The films were homogeneous with good adhesion to the substrate. The results indicate the viability of using them in optoelectronic devices.

scholarly journals Structural and Optical Properties of Cobalt-Doped Zinc Oxide Thin Films Prepared By Spray Pyrolysis Technique

2010 ◽  
Vol 7 (1) ◽  
pp. 69-75
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Texture Coefficient ◽  
Hexagonal Structure ◽  
Structural And Optical Properties ◽  
Lattice Constants ◽  
Glass Substrates

Undoped and Co-doped zinc oxide (CZO) thin films have been prepared by spray pyrolysis technique using solution of zinc acetate and cobalt chloride. The effect of Co dopants on structural and optical properties has been investigated. The films were found to exhibit maximum transmittance (~90%) and low absorbance. The structural properties of the deposited films were examined by x-ray diffraction (XRD). These films, deposited on glass substrates at (400? C), have a polycrystalline texture with a wurtzite hexagonal structure, and the grain size was decreased with increasing Co concentration, and no change was observed in lattice constants while the optical band gap decreased from (3.18-3.02) eV for direct allowed transition. Other parameters such as Texture Coefficient (Tc), dislocation density (?) and number of crystals (M) were also calculated .

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