scholarly journals Inhomogeneity and Segregation Effect in the Surface Layer of Fe-Doped SrTiO3 Single Crystals

Crystals ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 33 ◽  
Author(s):  
Marcin Wojtyniak ◽  
Katarzyna Balin ◽  
Jacek Szade ◽  
Krzysztof Szot

The effect of Fe doping on SrTiO3 single crystals was investigated in terms of crystal and electronic structure over a wide temperature range in both oxidizing and reducing conditions. The electrical properties were thoroughly studied with a special focus on the resistive switching phenomenon. Contrary to the undoped SrTiO3 crystals, where isolated filaments are responsible for resistive switching, the iron-doped crystals showed stripe-like conducting regions at the nanoscale. The results showed a non-uniform Fe distribution of as-received crystals and the formation of new phases in the surface layer of reduced/oxidized samples. The oxidation procedure led to a separation of Ti(Fe) and Sr, while the reduction resulted in the tendency of Fe to agglomerate and migrate away from the surface as seen from the time of flight mass spectroscopy measurements. Moreover, a clear presence of Fe-rich nano-filament in the reduced sample was found.

2004 ◽  
Vol 566-568 ◽  
pp. 105-110 ◽  
Author(s):  
Anissa Gunhold ◽  
Karsten Gömann ◽  
Lars Beuermann ◽  
Volker Kempter ◽  
Günter Borchardt ◽  
...  

Polyhedron ◽  
2006 ◽  
Vol 25 (13) ◽  
pp. 2519-2524 ◽  
Author(s):  
J.G. Małecki ◽  
M. Jaworska ◽  
R. Kruszynski

2018 ◽  
Vol 11 (02) ◽  
pp. 1850038 ◽  
Author(s):  
Shuangsuo Mao ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Bing Li ◽  
Shouhui Zhu ◽  
...  

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)[Formula: see text]/SCO/Ti ([Formula: see text], 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti ([Formula: see text]) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti ([Formula: see text]) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.


1991 ◽  
Vol 185-189 ◽  
pp. 2019-2020 ◽  
Author(s):  
N. Terada ◽  
G. Zouganelis ◽  
M. Jo ◽  
M. Hirabayashi ◽  
K. Kaneko ◽  
...  

Polyhedron ◽  
2005 ◽  
Vol 24 (2) ◽  
pp. 359-368 ◽  
Author(s):  
J.G. Małecki ◽  
M. Jaworska ◽  
R. Kruszynski

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