scholarly journals Multiple Electronic Components and Lifshitz Transitions by Oxygen Wires Formation in Layered Cuprates and Nickelates

2019 ◽  
Vol 4 (1) ◽  
pp. 15 ◽  
Author(s):  
Thomas Jarlborg ◽  
Antonio Bianconi

There is growing compelling experimental evidence that a quantum complex matter scenario made of multiple electronic components and competing quantum phases is needed to grab the key physics of high critical temperature ( T c ) superconductivity in layered cuprates. While it is known that defect self-organization controls T c , the mechanism remains an open issue. Here we focus on the theoretical prediction of the multiband electronic structure and the formation of broken Fermi surfaces generated by the self-organization of oxygen interstitials O i atomic wires in the spacer layers in HgBa 2 CuO 4 ± δ , La 2 CuO 4 ± δ and La 2 NiO 4 ± δ , by means of self-consistent Linear Muffin-Tin Orbital (LMTO) calculations. The electronic structure of a first phase of ordered O i atomic wires and of a second glassy phase made of disordered O i impurities have been studied through supercell calculations. We show the common features of the influence of O i wires in the electronic structure in three types of materials. The ordering of O i into wires leads to a separation of the electronic states between the O i ensemble and the rest of the bulk. The wire formation first produces quantum confined localized states near the wire, which coexist with, Second, delocalized states in the Fermi surface (FS) of doped cuprates. A new scenario emerges for high T c superconductivity, where Kitaev wires with Majorana bound states are proximity-coupled to a 2D d-wave superconductor.

2021 ◽  
Vol 1 ◽  

We theoretically show that the nodal structures in topological semimetals, including Weyl points and nodal lines, can be switched by magnetic orders, accompanied by localized states at magnetic domain walls.


2012 ◽  
Vol 86 (11) ◽  
Author(s):  
Ryo Nakanishi ◽  
Ryo Kitaura ◽  
Paola Ayala ◽  
Hidetsugu Shiozawa ◽  
Kathrin de Blauwe ◽  
...  

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo

AbstractThe electronic structure of amorphous silicon layers has been calculated within the empirical tight binding approximation using the Wooten-Winer-Weaire atomic structure model. We predict an important blue shift due to the confinement for layer thickness below 3 nm and we compare with crystalline silicon layers. The radiative recombination rate is enhanced by the disorder and the confinement but remains quite small. The comparison of our results with experimental results shows that the density of defects and localized states in the studied samples must be quite small.


2006 ◽  
Vol 18 (10) ◽  
pp. 2897-2903 ◽  
Author(s):  
M C Hickey ◽  
A Husmann ◽  
S N Holmes ◽  
G A C Jones

1969 ◽  
Vol 24 (8) ◽  
pp. 1258-1265 ◽  
Author(s):  
M Mahnig ◽  
E Wicke

AbstractThe isomer shifts of 57Fe and 119Sn in Pd/Fe and Pd/Sn alloys of different compositions have been studied as functions of hydrogen content. In both systems the isomer shifts start to increase steeply at hydrogen contents which bring up the electron concentration in the alloy to 0.55 additional electrons per metal atom (compared to pure Pd). In accordance with results from other experimental methods each Fe atom has been found to donate 3 and each Sn atom 3.5 electrons to the bands of the alloy. The increase of the isomer shift is shown to follow the rise of the Fermi level when the bands are filled up gradually. It can be correlated to Friedel's model of virtual bound states. The results obtained confirm the connections developed earlier between the absorption of hydro-gen and the electronic structure of Pd and its alloys. They agree with conclusions drawn from magnetic behaviour and from electronic specific heats at low temperatures. They do not verify, how-ever, a direct relation to the lattice constants in these systems. It is not yet obvious how to correlate our results with the value of 0.36 d-holes in pure Pd obtained recently from measurements of the de Haas-van Alphen effect; possible deviations from the rigid-band model are discussed.


2019 ◽  
Vol 32 (2) ◽  
pp. 025504
Author(s):  
Run Cheng ◽  
Yong-Long Wang ◽  
Hao-Xuan Gao ◽  
Hao Zhao ◽  
Jia-Qi Wang ◽  
...  

1994 ◽  
Vol 50 (8) ◽  
pp. 5147-5154 ◽  
Author(s):  
R. Ahuja ◽  
S. Auluck ◽  
B. Johansson ◽  
M. S. S. Brooks

1999 ◽  
Vol 121 (2) ◽  
pp. 127-134 ◽  
Author(s):  
H. Chai ◽  
Y. Zohar

Wire sweep has been recognized as one of the major defects in encapsulation of electronic components by transfer molding. The phenomenon is very complicated as it is sensitive to a large number of parameters. In this experimental work, where a 160L QFP package used as the test vehicle, the detailed time-dependent wire displacement is measured for the following two different flow initial conditions: (i) the wire is immersed in the liquid and is displaced due to the acceleration of the flow from rest to the steady-state velocity, and (ii) the wire is surrounded by the ambient air and is displaced first due to the passage of the liquid front and then due to the hydrodynamic load. Significant differences have been observed between the two cases, with important implications for analytical and numerical studies of wire sweep.


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