scholarly journals Electrodeposition of ZnO/Cu2O Heterojunctions on Ni-Mo-P Electroless Coating

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 935
Author(s):  
Nelly Maria Rosas-Laverde ◽  
Alina Iuliana Pruna ◽  
Jesus Cembrero ◽  
David Busquets-Mataix

Electroless Ni-Mo-P coatings were deposited onto ceramic tiles in order to be employed as electrodes for the electrodeposition of ZnO and Cu2O heterojunction layers. Varying conditions, such as duration, annealing of the electroless coating and applied potential, and duration for ZnO electrodeposition were studied in order to optimize the properties of the ZnO/Cu2O heterojunctions toward improved photoelectrical performance. The coatings were evaluated in terms of morphology, crystalline structure, and by electrochemical and photoelectrical means. The obtained results indicated that a prolonged annealing treatment at low temperature is beneficial to improve the roughness and electrical conductivity of the Ni-Mo-P coating to further enhance the electrodeposition of ZnO. The morphology analysis revealed continuous and homogeneous Ni-Mo-P coatings. The formation of cube-like Cu2O crystals with larger grain size was induced by increasing the deposition duration of ZnO. The properties of ZnO layer are much improved when a higher cathodic potential is applied (−0.8 V) for 1 h, resulting in optimum photoelectric parameters as 1.44 mA·cm−2 for the JSC and 760.23 µV for the VOC value, respectively, for the corresponding heterojunction solar cell.

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 356
Author(s):  
Tingjun Wu ◽  
Jae-Hong Lim ◽  
Kyu-Hwan Lee ◽  
Jiwon Kim ◽  
Nosang V. Myung

The Te-embedded PbTe nanocrystallline thick films (i.e., 50 µm) were electrodeposited, where the fraction and average grain size of PbTe and Te phases were tuned by adjusting the applied potential followed by post thermal treatment. The crystal grain boundary and Te nano-inclusion in the films played critical roles in their thermoelectric properties. The Te-embedded PbTe thick film with the average grain size of around 100 nm showed lower energy barrier height (EB = 0.023 eV) than thick films with the average grain size of a few tens of nm (EB = 0.11). Although decrease in the energy barrier reduced the Seebeck coefficient, however, it enhanced the electrical conductivity, which resulted in an increase in power factor (PF). The highest power factor was 183 μw K−2 cm−1, achieved at the energy barrier of 0.023 eV.


2021 ◽  
Vol 21 (9) ◽  
pp. 4897-4901
Author(s):  
Hyo-Sang Yoo ◽  
Yong-Ho Kim ◽  
Hyeon-Taek Son

In this study, changes in the microstructure, mechanical properties, and electrical conductivity of cast and extruded Al–Zn–Cu–Mg based alloys with the addition of Li (0, 0.5 and 1.0 wt.%) were investigated. The Al–Zn–Cu–Mg–xLi alloys were cast and homogenized at 570 °C for 4 hours. The billets were hot extruded into rod that were 12 mm in diameter with a reduction ratio of 38:1 at 550 °C. As the amount of Li added increased from 0 to 1.0 wt.%, the average grain size of the extruded Al alloy increased from 259.2 to 383.0 µm, and the high-angle grain boundaries (HGBs) fraction decreased from 64.0 to 52.1%. As the Li content increased from 0 to 1.0 wt.%, the elongation was not significantly different from 27.8 to 27.4% and the ultimate tensile strength (UTS) was improved from 146.7 to 160.6 MPa. As Li was added, spherical particles bonded to each other, forming an irregular particles. It is thought that these irregular particles contribute to the strength improvement.


2012 ◽  
Vol 45 (1) ◽  
pp. 19-24 ◽  
Author(s):  
G. Gregori ◽  
P. Lupetin ◽  
J. Maier

2004 ◽  
Vol 36 (4) ◽  
pp. 2057 ◽  
Author(s):  
Φ. Πλιάκας ◽  
I. Διαμαντής ◽  
A. Καλλιώρας ◽  
Χ. Πεταλάς

This paper investigates the progress of seawater intrusion within the plain area of Xylagani - Imeros, in SW part of Rhodope Prefecture, as well as the suitability of groundwater for several purposes, after qualitative valuation of groundwater samples from selective wells of the study area. The conclusions also include some managerial suggestions for the confrontation of seawater intrusion. The investigation in question took place between 1994-1997 and 2002-2003, and involves the installation of piezometric wells, geoelectric sounding measurements, grain size analyses, monitoring of the groundwater level fluctuations in selective wells, specific electrical conductivity measurements and chemical analyses of water samples from selective wells of the study area.


2012 ◽  
Vol 501 ◽  
pp. 319-323
Author(s):  
Hasan A. Alwi ◽  
Lay S. Ewe ◽  
Zahari Ibrahim ◽  
Noor B. Ibrahim ◽  
Roslan Abd-Shukor

We report the room temperature thermal conductivity κ and thermal diffusivity α of polycrystalline La0.7Ca0.3-xSrxMnO3 for x = 0 to 0.1. The samples were prepared by heating at 1220 and 1320oC. The insulator-metal transition temperature, TIM and thermal diffusivity increased with Sr content. Phonon was the dominant contributor to thermal conductivity and the electronic contribution was less than 1%. Enhancement of electrical conductivity σ and thermal diffusivity for x ≥ 0.08 was observed in both series of samples. The grain size of the samples (28 to 46 µm) does not show any affect on the thermal and electrical properties.


2019 ◽  
Vol 2019 ◽  
pp. 1-7 ◽  
Author(s):  
Pornsiri Wanarattikan ◽  
Piya Jitthammapirom ◽  
Rachsak Sakdanuphab ◽  
Aparporn Sakulkalavek

In this work, stoichiometric Sb2Te3 thin films with various thicknesses were deposited on a flexible substrate using RF magnetron sputtering. The grain size and thickness effects on the thermoelectric properties, such as the Seebeck coefficient (S), electrical conductivity (σ), power factor (PF), and thermal conductivity (k), were investigated. The results show that the grain size was directly related to film thickness. As the film thickness increased, the grain size also increased. The Seebeck coefficient and electrical conductivity corresponded to the grain size of the films. The mean free path of carriers increases as the grain size increases, resulting in a decrease in the Seebeck coefficient and increase in electrical conductivity. Electrical conductivity strongly affects the temperature dependence of PF which results in the highest value of 7.5 × 10−4 W/m·K2 at 250°C for film thickness thicker than 1 µm. In the thermal conductivity mechanism, film thickness affects the dominance of phonons or carriers. For film thicknesses less than 1 µm, the behaviour of the phonons is dominant, while both are dominant for film thicknesses greater than 1 µm. Control of the grain size and film thickness is thus critical for controlling the performance of Sb2Te3 thin films.


Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 339 ◽  
Author(s):  
Yong Wang ◽  
Jinguo Wang ◽  
Haohao Zou ◽  
Yutong Wang ◽  
Xu Ran

Cu-2.4 wt.%V nanocomposite has been prepared by mechanical alloy and vacuum hot-pressed sintering technology. The composites were sintered at 800 °C, 850 °C, 900 °C, and 950 °C respectively. The microstructure and properties of composites were investigated. The results show that the Cu-2.4 wt.%V composite presents high strength and high electrical conductivity. The composite sintered at 900 °C has a microhardness of 205 HV, a yield strength of 404.41 MPa, and an electrical conductivity of 79.5% International Annealed Copper Standard (IACS); the microhardness and yield strength reduce gradually with the increasing consolidation temperature, which is mainly due to the growth of copper grain size. After sintering, copper grain size and V nanoparticle both maintain in nanoscale; the strengthening mechanism is related to grain boundary strengthening and dispersion strengthening, while the grain boundary strengthening mechanism plays the most important role. This study indicates that the addition of small amounts of V element could enhance the copper matrix markedly with the little sacrifice of electrical conductivity.


1971 ◽  
Vol 26 (7) ◽  
pp. 1198-1201
Author(s):  
C. Weyrich

Abstract Grain Growth of Pure and Doped Poly crystalline Selenium Samples of vitreous high-purity selenium as well as vitreous chlorine-and thallium-doped selenium have been brought into the polycrystalline form by annealing. The dependence of grain size on annealing time tu was measured. In high-purity selenium and in chlorine-doped selenium the mean grain diameter increases essentially ~ tu1/2 , in thallium-doped selenium ~ tu1/2 , as is expected from the laws of grain growth. The proportionality between electrical conductivity and specific grain surface reported by other authors could not be verified.


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