scholarly journals In Silico Study of the Influence of Various Substrates on the Electronic Properties and Electrical Conductivity of Mono- and Bilayer Films of Armchair Single-Walled Carbon Nanotubes

2021 ◽  
Vol 5 (3) ◽  
pp. 48
Author(s):  
Michael M. Slepchenkov ◽  
Alexander А. Petrunin ◽  
Olga E. Glukhova
Keyword(s):  
Electrical Conductivity ◽  
Electronic Properties ◽  
Crystalline Silicon ◽  
Mutual Influence ◽  
Transmission Function ◽  
Surface Topology ◽  
Bilayer Film ◽  
Current Transfer ◽  
Electron Transmission ◽  
Single Walled Carbon

We investigate electronic and electro-physical properties of mono- and bilayer armchair single-walled carbon nanotube (SWCNT) films located on substrates of different types, including substrates in the form of crystalline silicon dioxide (SiO2) films with P42/mnm and P3121 space symmetry groups. The SWCNT films interact with substrate only by van der Waals forces. The densities of electronic states (DOS) and the electron transmission functions are calculated for SWCNT films with various substrates. The electrical conductivity of SWCNT films is calculated based on the electron transmission function. It is found that the substrate plays an important role in the formation of DOS of the SWCNT films, and the surface topology determines the degree and nature of the mutual influence of the nanotube and the substrate. It is shown that the substrate affects the electronic properties of monolayer films, changing the electrical resistance value from 2% to 17%. However, the substrate has practically no effect on the electrical conductivity and resistance of the bilayer film in both directions of current transfer. In this case, the values of the resistances of the bilayer film in both directions of current transfer approach the value of ~6.4 kΩ, which is the lowest for individual SWCNT.

scholarly journals Влияние подложки из оксида кремния на электронные свойства и электропроводность моно- и бислойных пленок из одностенных углеродных нанотрубок типа кресло: квантово-механическое исследование

2021 ◽  
Vol 63 (10) ◽  
pp. 1668
Author(s):  
О.Е. Глухова ◽  
А.А. Петрунин
Keyword(s):  
Electronic Properties ◽  
Silicon Oxide ◽  
Large Degree ◽  
Bilayer Film ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Armchair Nanotubes ◽  
Crystal Film ◽  
Oxide Substrates ◽  
Walled Carbon Nanotubes

We investigate electrical properties of mono- and bilayer single-walled carbon nanotube (SWCNT) films located on silicon oxide substrates. The substrate is a silicon dioxide crystal film characterized by a P42/mnm space group with (100) surface. The single-walled carbon nanotubes are armchair nanotubes of subnanometer diameter (4,4) and nanometer diameter (7,7). It is found that the diameter of the nanotubes is of great importance and determines the electronic properties of the film on the substrate in a large degree. Thin tubes (4,4) formed in a bilayer film (with a reciprocally perpendicular orientation relative to each other) have the least resistance. The substrate has insignificant influence on the electronic properties of such a film. Films with larger diameter tubes are characterized by a higher resistance value. It is found that the important role is played by the contact surface of the SWCNT–substrate.

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Kumar ◽  
P.I. Widenborg ◽  
H. Hidayat ◽  
Qiu Zixuan ◽  
A.G. Aberle
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Dopant Activation ◽  
Hall Effect Measurements ◽  
Probe Measurements

ABSTRACTThe effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

scholarly journals Post-Annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells

2021 ◽  
Author(s):  
Yuanwei Jiang ◽  
Shuangying Cao ◽  
Linfeng Lu ◽  
Guanlin Du ◽  
Yinyue Lin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Electronic Properties ◽  
Crystalline Silicon ◽  
Annealing Treatment ◽  
Crystalline Silicon Solar Cells ◽  
Post Annealing ◽  
Si Solar Cells ◽  
Optical And Electronic Properties ◽  
Large Work

Abstract Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100oC shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX’s hole selectivity and passivation ability.

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