scholarly journals Atomic Layer Deposition of Nanolayered Carbon Films

2021 ◽  
Vol 7 (4) ◽  
pp. 67
Author(s):  
Zhigang Xiao ◽  
Kim Kisslinger ◽  
Rebhadevi Monikandan
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Film ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Carbon Films ◽  
Transmission Electron Micrograph ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Defective Sites

In this paper, carbon thin films were grown using the plasma-enhanced atomic layer deposition (PE-ALD). Methane (CH4) was used as the carbon precursor to grow the carbon thin film. The grown film was analyzed by the high-resolution transmission electron micrograph (TEM), X-ray photoelectron spectroscopy (XPS) analysis, and Raman spectrum analysis. The analyses show that the PE-ALD-grown carbon film has an amorphous structure. It was found that the existence of defective sites (nanoscale holes or cracks) on the substrate of copper foil could facilitate the formation of nanolayered carbon films. The mechanism for the formation of nanolayered carbon film in the nanoscale holes was discussed. This finding could be used for the controlled growth of nanolayered carbon films or other two-dimensional nanomaterials while combining with modern nanopatterning techniques.

Atomic Layer Deposition on Quantities of Multiwalled Carbon Nanotubes

2007 ◽  
Vol 1054 ◽  
Author(s):  
Andrew S. Cavanagh ◽  
Christopher A. Wilson ◽  
Alan W. Weimer ◽  
Steven M. George
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Multiwalled Carbon Nanotubes ◽  
Photoelectron Spectroscopy ◽  
High Surface ◽  
High Surface Area ◽  
Atomic Layer ◽  
Multiwalled Carbon ◽  
Transmission Electron ◽  
Layer Deposition

ABSTRACTAtomic layer deposition (ALD) was performed on quantities of multiwalled carbon nanotubes (MWCNTs) in a rotary reactor. Because of nucleation difficulties, Al2O3 ALD grew as nanospheres on the MWCNTs. After a NO2 nucleation treatment, Al2O3 ALD films grew conformally and noncovalently functionalized the surface of the MWCNT. This Al2O3 ALD film served as a platform for the growth of W ALD metal. The uncoated and ALD-coated MWCNTs were characterized with transmission electron microscopy and x-ray photoelectron spectroscopy. This study demonstrates that ALD can be performed on quantities of very high surface area MWCNT substrates.

scholarly journals Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition

2012 ◽  
Vol 1408 ◽  
Author(s):  
Cagla Ozgit ◽  
Fatma Kayaci ◽  
Inci Donmez ◽  
Engin Cagatay ◽  
Tamer Uyar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Layer Deposition ◽  
High Resolution Tem ◽  
Uniform Wall

ABSTRACTAl2O3 and AlN nanotubes were fabricated by depositing conformal thin films via atomic layer deposition (ALD) on electrospun nylon 66 (PA66) nanofiber templates. Depositions were carried out at 200°C, using trimethylaluminum (TMAl), water (H2O), and ammonia (NH3) as the aluminum, oxygen, and nitrogen precursors, respectively. Deposition rates of Al2O3 and AlN at this temperature were ∼1.05 and 0.86 Å/cycle. After the depositions, Al2O3- and AlN-coated nanofibers were calcinated at 500°C for 2 h in order to remove organic components. Nanotubes were characterized by using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). AlN nanotubes were polycrystalline as determined by high resolution TEM (HR-TEM) and selected area electron diffraction (SAED). TEM images of all the samples reported in this study indicated uniform wall thicknesses.

Properties of High-Quality LaAlO3 Film Deposited by In Situ Plasma-Enhanced-Atomic-Layer-Deposition

2013 ◽  
Vol 721 ◽  
pp. 24-28 ◽  
Author(s):  
Duo Cao ◽  
Xin Hong Cheng ◽  
Ting Ting Jia ◽  
Da Wei Xu ◽  
Li Zheng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Valence Band Offset ◽  
Xps Spectra ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Interfacial States ◽  
Current Densities

Plasma enhanced atomic layer deposition (PEALD) method can decrease film growing temperature, and allow in-situ plasma treatment. LaAlO3 films were deposited with PEALD at 180°C. High resolution transmission electron microscopy (HRTEM) results exhibited amorphous microstructure of both films even after rapid thermal annealing (RTA) at 800°C. X-ray photoelectron spectroscopy (XPS) spectra suggested that the valence-band offset between the LaAlO3 film and the substrate was 3.3 eV. The electrical experimental results indicated that the leakage current densities were 0.10mA/cm2 and 0.03mA/cm2 respectively at a gate bias of |Vg-Vfb|=1V and the equivalent oxide thicknesses (EOT) of them were 1.2 nm and 1.4 nm, respectively. The densities of interfacial states were calculated to be 1.70×1012eV-1cm-2 and 1.09×1012eV-1cm-2, respectively.

Growth of HfSixOy/ HfO2 Thin Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Techniques

MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 311-316
Author(s):  
Hiroki Ishizaki
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Remote Plasma ◽  
Equivalent Thickness ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Layer Deposition

ABSTRACTIn this paper, we will report on the formation of HfSixOy layer on an HF-last Si(100) substrate by atomic layer deposition from tetrakis(dimethylamido)hafnium (TDMAH) and atomic oxygen generated by a microwave remote plasma. Transmission electron microscopy observations of HfSixOy /Si structures deposited at 100 and 300℃ revealed that 3∼5-nm-thick amorphous HfSixOy layers were unintentionally formed preceded the growth of crystalline Hf-rich HfSixOy layers. To understand the mechanism of this unintentional growth of HfSixOy, the depth profiles of Hf, O and Si elements were measured by X-ray photoelectron spectroscopy. It was found that Hf atoms deeply diffused into the Si substrate. From these results, suppression of Hf in diffusion to the Si substrate must be important to reduce the capacitance equivalent thickness of the metal-oxide-semiconductor capacitors. The roles of TDMAH and plasma-generated oxygen radical on the enhanced diffusion of Hf will be discussed in detail.

scholarly journals 3D-nanoarchitectured Pd/Ni catalysts prepared by atomic layer deposition for the electrooxidation of formic acid

2014 ◽  
Vol 5 ◽  
pp. 162-172 ◽  
Author(s):  
Loïc Assaud ◽  
Evans Monyoncho ◽  
Kristina Pitzschel ◽  
Anis Allagui ◽  
Matthieu Petit ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Formic Acid ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Ni Catalysts ◽  
X Ray ◽  
Ni Substrate ◽  
Layer Deposition ◽  
Deposition Processes

Three-dimensionally (3D) nanoarchitectured palladium/nickel (Pd/Ni) catalysts, which were prepared by atomic layer deposition (ALD) on high-aspect-ratio nanoporous alumina templates are investigated with regard to the electrooxidation of formic acid in an acidic medium (0.5 M H2SO4). Both deposition processes, Ni and Pd, with various mass content ratios have been continuously monitored by using a quartz crystal microbalance. The morphology of the Pd/Ni systems has been studied by electron microscopy and shows a homogeneous deposition of granularly structured Pd onto the Ni substrate. X-ray diffraction analysis performed on Ni and NiO substrates revealed an amorphous structure, while the Pd coating crystallized into a fcc lattice with a preferential orientation along the [220]-direction. Surface chemistry analysis by X-ray photoelectron spectroscopy showed both metallic and oxide contributions for the Ni and Pd deposits. Cyclic voltammetry of the Pd/Ni nanocatalysts revealed that the electrooxidation of HCOOH proceeds through the direct dehydrogenation mechanism with the formation of active intermediates. High catalytic activities are measured for low masses of Pd coatings that were generated by a low number of ALD cycles, probably because of the cluster size effect, electronic interactions between Pd and Ni, or diffusion effects.

Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

2018 ◽  
Vol 32 (19) ◽  
pp. 1840074 ◽  
Author(s):  
Viral Barhate ◽  
Khushabu Agrawal ◽  
Vilas Patil ◽  
Sumit Patil ◽  
Ashok Mahajan
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition

The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

scholarly journals Scalable nanoporous carbon films allow line-of-sight 3D atomic layer deposition of Pt: towards a new generation catalyst layer for PEM fuel cells

2021 ◽  
Author(s):  
Marwa Atwa ◽  
Xiaoan Li ◽  
Zhaoxuan Wang ◽  
Samuel Dull ◽  
Shicheng Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Pt Nanoparticles ◽  
Catalyst Layer ◽  
Atomic Layer ◽  
Pem Fuel Cells ◽  
Nanoporous Carbon ◽  
Carbon Films ◽  
Layer Deposition ◽  
Binder Free ◽  
New Generation

A self-supported, binder-free and scalable nanoporous carbon scaffold serves as an excellent host for the efficient and uniform atomic layer deposition of Pt nanoparticles, showing exemplary performance as a cathode catalyst layer in a PEM fuel cell.

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

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