scholarly journals Numerical Modeling of an Organic Electrochemical Transistor

Biosensors ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 103 ◽  
Author(s):  
Anna Shirinskaya ◽  
Gilles Horowitz ◽  
Jonathan Rivnay ◽  
George Malliaras ◽  
Yvan Bonnassieux
Keyword(s):  
Electrical Potential ◽  
Final State ◽  
Density Profiles ◽  
Polymer Interface ◽  
Current Voltage ◽  
Electrochemical Transistor ◽  
Voltage Dependent ◽  
Current Voltage Characteristics ◽  
Moving Front ◽  
Source Electrode

We develop a numerical model for the current-voltage characteristics of organic electrochemical transistors (OECTs) based on steady-state Poisson’s, Nernst’s and Nernst–Planck’s equations. The model starts with the doping–dedoping process depicted as a moving front, when the process at the electrolyte–polymer interface and gradually moves across the film. When the polymer reaches its final state, the electrical potential and charge density profiles largely depend on the way the cations behave during the process. One case is when cations are trapped at the polymer site where dedoping occurs. In this case, the moving front stops at a point that depends on the applied voltage; the higher the voltage, the closer the stopping point to the source electrode. Alternatively, when the cations are assumed to move freely in the polymer, the moving front eventually reaches the source electrode in all cases. In this second case, cations tend to accumulate near the source electrode, and most of the polymer is uniformly doped. The variation of the conductivity of the polymer film is then calculated by integrating the density of holes all over the film. Output and transfer curves of the OECT are obtained by integrating the gate voltage-dependent conductivity from source to drain.

scholarly journals Monazomycin-induced single channels. I. Characterization of the elementary conductance events.

1982 ◽  
Vol 80 (3) ◽  
pp. 403-426 ◽  
Author(s):  
O S Andersen ◽  
R U Muller
Keyword(s):  
Lipid Bilayer ◽  
Single Channels ◽  
Lipid Bilayer Membranes ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Conductance Changes ◽  
Current Voltage Characteristics ◽  
The Individual ◽  
Positively Charged

Monazomycin (a positively charged, polyene-like antibiotic) induces voltage-dependent conductance changes in lipid bilayer membranes when added to one of the bathing solutions. These conductance changes have generally been attributed to the existence of channels spanning the membrane. In this article we characterize the behavior of the individual conductance events observed when adding small amounts of monazomycin to one side of a lipid bilayer. We find that there are several apparent channel types with one or sometimes two amplitudes predominating. We find further that these fairly similar amplitudes represent two different states of the same fundamental channel entity, presumed to be the monazomycin channel. The current-voltage characteristics of these channels are weakly hyperbolic functions of applied potential. The average lifetimes are essentially voltage independent (between 50 and 400 mV). The average channel intervals, on the other hand, can be strongly voltage dependent, and we can show that the time-averaged conductance of a membrane is proportional to the average channel frequency.

Development of Porous Silicon Based Visible Light Photodetectors

2013 ◽  
Vol 538 ◽  
pp. 341-344 ◽  
Author(s):  
Yuan Ming Huang ◽  
Qing Lan Ma ◽  
Bao Gai Zhai
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Silicon Film ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Current Voltage Characteristics ◽  
Silicon Based ◽  
Scanning Electron ◽  
Tungsten Lamp

Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating aluminum contact onto the top surface of porous silicon films to form metal-semiconductor-metal Schottky junctions. The spongy nanostructures of the porous silicon film were characterized with the scanning electron microscopy. The current-voltage characteristics, the biased voltage dependent photocurrents and the illumination intensity dependent photocurrents were measured for the Al/porous silicon/Si visible light photodetectors. It is found that the photocurrents as large as 4 mA/cm2 can be achieved for the porous silicon based visible light photodetectors under the normal illumination of one 500 W tungsten lamp

Investigations of Electrostatic and Ionized Fields Analysis for Dual-Electrode System

2016 ◽  
Vol 3 (1) ◽  
pp. 80
Author(s):  
Mohamed A. Abouelatta ◽  
Abdelhadi R. Salama ◽  
A. M. Omar ◽  
S. A. Ward
Keyword(s):  
Electric Field ◽  
Electrostatic Field ◽  
Simulation Method ◽  
Electrode System ◽  
Charge Simulation Method ◽  
Density Profiles ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ion Current Density ◽  
Good Agreement

<p>The paper presents the computation and measurement of electric field, in both electrostatic as well as ionized case, for dual electrode system intended for electrostatic applications. The dual electrode system consists of an ionizing and non-ionizing electrode have the same voltage and facing a grounded collecting plate. The charge simulation method (CSM) coupled with genetic algorithms (GAs) and method of characteristic (MOC) is applied to compute the electrostatic field and the ionized field respectively. The influence of dual system parameters such as ionized wire diameter and inter electrode distances on the profile of the electrostatic field on the collecting plate and on the surface of the ionizing wire has been studied. The measurements of the ionized electric field, current-voltage characteristics and ion current density profiles are implemented using the technique of the linear biased probe. An experimental setup is constructed to model the present electrode arrangement. The measurements are carried out for ionized wire of diameter 0.25 and 0.5mm. The computed results are found to be in good agreement with experiments.</p>

Extracting the Device Parameters from Organic Thin Film Transistors

2006 ◽  
Vol 965 ◽  
Author(s):  
Eung Seok Park ◽  
Pil Soo Kang ◽  
Gyu Tae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Mathematical Expressions ◽  
Current Voltage ◽  
Fitting Procedures ◽  
Voltage Dependent ◽  
Current Voltage Characteristics ◽  
Hydrogenated Amorphous

ABSTRACTOrganic thin film transistors(OTFTs) were simulated by a SPICE model adopted in hydrogenated amorphous TFTs(a-Si:H). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs originating from the distribution of trap sites for the hopping conduction.

scholarly journals Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

2013 ◽  
Vol 2013 ◽  
pp. 1-10 ◽  
Author(s):  
A. Karsenty ◽  
A. Chelly
Keyword(s):  
Room Temperature ◽  
Series Resistance ◽  
Electrical Characteristics ◽  
Saturation Current ◽  
Mobility Degradation ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Channel Thickness ◽  
Current Voltage Characteristics ◽  
First Time

Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46 nm and lower than 5 nm, respectively, were fabricated using a selective “gate-recessed” process on the same silicon wafer. Their current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a huge series resistance and found that the last one seems more coherent. Then the electrical characteristics of the NSB can be analytically derived by integrating a gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance is reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation current with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other nanodevices in which series resistance and/or mobility degradation is of a great concern.

Analysis of the Bias Dependent Spectral Response of a-SiC:H p-i-n Photodiode

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Louro ◽  
A. Fantoni ◽  
Yu. Vygranenko ◽  
M. Fernandes ◽  
M. Vieira
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Spectral Response ◽  
Surface Recombination ◽  
Electrical Field ◽  
Field Reversal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
And Inversion ◽  
Device Operation

AbstractThe bias voltage dependent spectral response (with and without steady state bias light) and the current voltage dependence has been simulated and compared to experimentally obtained values. Results show that in the heterostructures the bias voltage influences differently the field and the diffusion part of the photocurrent. The interchange between primary and secondary photocurrent (i. e. between generator and load device operation) is explained by the interaction of the field and the diffusion components of the photocurrent. A field reversal that depends on the light bias conditions (wavelength and intensity) explains the photocurrent reversal. The field reversal leads to the collapse of the diode regime (primary photocurrent) launches surface recombination at the p-i and i-n interfaces which is responsible for a double-injection regime (secondary photocurrent). Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response.

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