scholarly journals Carbon Nanotube (CNT)-Based Biosensors

Biosensors ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 486
Author(s):  
David C. Ferrier ◽  
Kevin C. Honeychurch

This review focuses on recent advances in the application of carbon nanotubes (CNTs) for the development of sensors and biosensors. The paper discusses various configurations of these devices, including their integration in analytical devices. Carbon nanotube-based sensors have been developed for a broad range of applications including electrochemical sensors for food safety, optical sensors for heavy metal detection, and field-effect devices for virus detection. However, as yet there are only a few examples of carbon nanotube-based sensors that have reached the marketplace. Challenges still hamper the real-world application of carbon nanotube-based sensors, primarily, the integration of carbon nanotube sensing elements into analytical devices and fabrication on an industrial scale.

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.


2006 ◽  
Vol 45 (4B) ◽  
pp. 3680-3685 ◽  
Author(s):  
Bae-Horng Chen ◽  
Jeng-Hua Wei ◽  
Po-Yuan Lo ◽  
Zing-Way Pei ◽  
Tien-Sheng Chao ◽  
...  

2020 ◽  
Vol 11 ◽  
Author(s):  
Arshak Poghossian ◽  
Melanie Jablonski ◽  
Denise Molinnus ◽  
Christina Wege ◽  
Michael J. Schöning

Coronavirus disease 2019 (COVID-19) is a novel human infectious disease provoked by severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2). Currently, no specific vaccines or drugs against COVID-19 are available. Therefore, early diagnosis and treatment are essential in order to slow the virus spread and to contain the disease outbreak. Hence, new diagnostic tests and devices for virus detection in clinical samples that are faster, more accurate and reliable, easier and cost-efficient than existing ones are needed. Due to the small sizes, fast response time, label-free operation without the need for expensive and time-consuming labeling steps, the possibility of real-time and multiplexed measurements, robustness and portability (point-of-care and on-site testing), biosensors based on semiconductor field-effect devices (FEDs) are one of the most attractive platforms for an electrical detection of charged biomolecules and bioparticles by their intrinsic charge. In this review, recent advances and key developments in the field of label-free detection of viruses (including plant viruses) with various types of FEDs are presented. In recent years, however, certain plant viruses have also attracted additional interest for biosensor layouts: Their repetitive protein subunits arranged at nanometric spacing can be employed for coupling functional molecules. If used as adapters on sensor chip surfaces, they allow an efficient immobilization of analyte-specific recognition and detector elements such as antibodies and enzymes at highest surface densities. The display on plant viral bionanoparticles may also lead to long-time stabilization of sensor molecules upon repeated uses and has the potential to increase sensor performance substantially, compared to conventional layouts. This has been demonstrated in different proof-of-concept biosensor devices. Therefore, richly available plant viral particles, non-pathogenic for animals or humans, might gain novel importance if applied in receptor layers of FEDs. These perspectives are explained and discussed with regard to future detection strategies for COVID-19 and related viral diseases.


2006 ◽  
Vol 89 (13) ◽  
pp. 132118 ◽  
Author(s):  
Swastik Kar ◽  
Aravind Vijayaraghavan ◽  
Caterina Soldano ◽  
Saikat Talapatra ◽  
Robert Vajtai ◽  
...  

Author(s):  
J Prasek ◽  
J Hubalek ◽  
M Adamek ◽  
O Jasek ◽  
L Zajickova

This paper deals with the problem of the replacement of mercury drop electrodes with solid electrodes in standard polarography. The screen-printed thick-film sensor with a three-electrode system was prepared. A working electrode was modified with nanopatterned nanostructures. Vertically aligned carbon nanotubes (CNTs) were grown on the working electrode. The process of the nanotubes growing was tested to create a homogeneous (CNTs) and high density CNT layer directly on the thick-film silver (Ag) layer. Thereby, the modified electrode is presented to be very perspective in heavy metal detection using electrochemical methods because of improvement of detection properties. The authors were able to determine the concentration of cadmium ions in units of µmol/L.


2007 ◽  
Vol 1057 ◽  
Author(s):  
Himani Sharma ◽  
Zhigang Xiao

ABSTRACTCarbon nanotube field-effect transistors (CNTFETs) were fabricated with metal material (gold) and semiconductor material (bismuth telluride) as the source and drain materials. Highly-purified HiPCO-grown single-walled carbon nanotubes (CNTs) from Carbon Nanotechnologies, Inc. (CNI) were used for the fabrication of CNTFETs. The single-walled carbon nanotubes were ultrasonically dispersed in toluene and dimethylformamide (DMF) with trifluoroacetic acid (TFA), as co-solvent. Dielectrophoresis (DEP) method was used to deposit, align, and assemble carbon nanotubes (CNTs) to bridge the gap between the source and drain of CNTFETs to form the channel. The structure of CNTFET is similar to a conventional field-effect transistor with substrate acting as a back-side gate. Electron-beam evaporation was used to deposit gold and bismuth telluride thin films. Microfabrication techniques such as photolithography, e-beam lithography, and lift-off process were used to define and fabricate the source, drain, and gate of CNTFETs. The gap between the source and drain varied from 800 nm to 3 µm. The drain-source current (IDS) of the fabricated CNTFETs versus the drain-source voltage (VDS) and the gate voltage (VG) was characterized. It was found that in the case of gold (Au) electrodes, the IV curves of CNTFETs clearly show behavior of the CNT (metallic or semiconducting) aligned across the source and drain of CNTFETs, while in the case of bismuth telluride (Bi2Te3) electrodes, the I-V curves are less dependent on the type of CNTs (metallic or semiconducting). The developed carbon nanotube field-effect transistors (CNTFETs) can be a good candidate for the application of nanoelectronics and integrated circuits with a high mobility and fast switching.


2001 ◽  
Vol 34 (6) ◽  
pp. 813-824 ◽  
Author(s):  
Ilaria Palchetti ◽  
Giovanna Marrazza ◽  
Marco Mascini

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