scholarly journals Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor

Biosensors ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 119
Author(s):  
Kristina A. Malsagova ◽  
Tatyana O. Pleshakova ◽  
Andrey F. Kozlov ◽  
Rafael A. Galiullin ◽  
Vladimir P. Popov ◽  
...  
Keyword(s):  
Influenza Virus ◽  
Influenza A ◽  
Virus Detection ◽  
Complementary Metal Oxide Semiconductor ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Mode Detection ◽  
Viral Particles ◽  
Detectable Concentration

The detection of influenza A virions with a nanoribbon detector (NR detector) has been demonstrated. Chips for the detector have been fabricated based on silicon-on-insulator nanoribbon structures (SOI nanoribbon chip), using a complementary metal-oxide-semiconductor (CMOS)-compatible technology—by means of gas-phase etching and standard optical photolithography. The surface of the SOI nanoribbon chip contains a matrix of 10 nanoribbon (NR) sensor elements. SOI nanoribbon chips of n-type conductance have been used for this study. For biospecific detection of target particles, antibodies against influenza virus have been covalently immobilized onto NRs. Influenza A virus detection was performed by real-time registration of the source-drain current through the NRs. The detection of the target viral particles was carried out in buffer solutions at the target particles concentration within the range from 107 to 103 viral particles per milliliter (VP/mL). The lowest detectable concentration of the target viral particles was 6 × 10−16 M (corresponding to 104 VP/mL). The use of solutions containing ~109 to 1010 VP/mL resulted in saturation of the sensor surface with the target virions. In the saturation mode, detection was impossible.

A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

2020 ◽  
pp. 1-18
Author(s):  
Florent Torres ◽  
Eric Kerhervé ◽  
Andreia Cathelin ◽  
Magali De Matos
Keyword(s):  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Fully Depleted ◽  
Technology Roadmap ◽  
Wide Range ◽  
28 Nm ◽  
Soi Cmos

Abstract This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

Evaluation of cytokine production by J774.G8 macrophages after treatment with biotherapics

2021 ◽  
Vol 10 (36) ◽  
pp. 167-169
Author(s):  
Camila Siqueira ◽  
Diogo Kuczera ◽  
Eneida Da Lozzo ◽  
Dorly Buchi ◽  
José Nelson Couceiro ◽  
...  
Keyword(s):  
Influenza Virus ◽  
Viral Infection ◽  
Influenza A ◽  
Control Groups ◽  
Viral Particles ◽  
Significant Difference ◽  
Infected Cells ◽  
H3n2 Influenza ◽  
Aseptic Conditions ◽  
H3n2 Influenza Virus

Introduction: Strains of macrophages, such as murine J774.G8 macrophages, are susceptible to influenza A infection [1]. One of the responses to viral infection involves the production of various types of immunostimulatory cytokines by infected cells [2]. Methods: In the present study, the macrophage strain J774.G8, maintained in RPMI medium, was submitted to treatment with 10% V/V of two different biotherapics prepared from influenza H3N2, both at 30x. Additionally, two control groups were analyzed: macrophages stimulated with water 30x and macrophages without any treatment. Biotherapics were prepared from intact H3N2 influenza virus and H3N2 inactivated by alcohol 70%. The compounding of both biotherapics followed this procedure: one part of viral particles was diluted in 9 parts of sterile distilled water. The 1:10 sample was submitted to 100 mechanical succussions using Autic® Brazilian machine, originating the first dilution, named decimal (1x). 1 ml of this solution was diluted in 9 ml of solvent and was submitted to 100 succussions, generating biotherapic 2x. This procedure was successively repeated, according to Brazilian Homeopathic Pharmacopoeia, to obtain the biotherapic 30x. By the same technique, water vehicle was prepared in the potency of 30x to be used as control. All samples were prepared under sterile and aseptic conditions, using laminar flow cabinet, class II, and were stored in the refrigerator (8ºC), to avoid microbiological contamination. J774.G8 macrophages were stimulated for 2 days, in a total of six stimuli. Immediately before infection with 25 µl of H3N2 influenza virus, the supernatants were collected and frozen at -20 ºC for later analysis. Next, 24 hours after the virus infection, the supernatants were aliquoted and frozen under the same conditions. Three independent experiments were done in triplicate. Analysis of supernatants was performed by flow cytometry using the Mouse Inflammation Kit. The cytokines detected in this experiment were IL-10, IL 12, TNF-α and MCP1. Results: In all cases, there were no significant differences compared to control groups. However, the production of TNF-α detected in macrophages treated by intact and inactivated biotherapics presented a tendency to increase after infection. In fact, similar results were previously detected in other experiments conducted only with the intact biotherapic [3]. The release of the cytokine MCP1 in all experimental situations presented a tendency to decrease after the viral infection when compared to untreated macrophages. No statistically significant difference was detected in the production of IL 12 and IL 10. These experiments will be repeated to confirm the data obtained.

scholarly journals A Programmable Impedance Tuner with a High Resolution Using a 0.18-um CMOS SOI Process for Improved Linearity

Electronics ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 7
Author(s):  
Younghwan Bae ◽  
Heesauk Jhon ◽  
Junghyun Kim
Keyword(s):  
Field Effect Transistors ◽  
Complementary Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Impedance Variation ◽  
Measurement Results ◽  
Power Handling Capability ◽  
Impedance Tuners ◽  
Step Over ◽  
Load Pull

In this paper, a novel coupler/reflection-type programmable electronic impedance tuner combined with switches that were fabricated by a 0.18-um complementary metal–oxide–semiconductor (CMOS) silicon-on-insulator (SOI) process is proposed for replacement of the conventional mechanical tuner in power amplifier (PA) load-pull test. By employing the multi-stacked field-effect transistors (FETs) as a single-branch switch, the proposed tuner has the advantage of precise impedance variation with systematic and magnitude and phase adjustment. Additionally, it led to high standing wave ratio (SWR) coverage and a good impedance resolution with a high power handling capability. Furthermore, the double-branch based on multi-stacked FET was applied to switches for additional enhancement of the intermodulation distortion (IMD) performance through the mitigated drain-source voltage of the single-FET. Drawing upon the measurement results, we demonstrated that SWR changed from 2 to 6 sequentially with a 12–15° phase angle step over a mid/high-band range of a 1.5–2.1 GHz band for 3G/4G handset application. In addition, the PA load-pull measurement results obtained using the proposed tuners verified their practicality and competitive performance with mechanical tuners. Finally, the measured linearity using the double-branch switch demonstrated the good IMD3 performance of −78 dBc, and this result is noteworthy when compared with conventional electronic impedance tuners.

scholarly journals 100 Gb/s Silicon Photonic WDM Transmitter with Misalignment-Tolerant Surface-Normal Optical Interfaces

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 336 ◽  
Author(s):  
Beiju Huang ◽  
Zanyun Zhang ◽  
Zan Zhang ◽  
Chuantong Cheng ◽  
Huang Zhang ◽  
...  
Keyword(s):  
Wavelength Division Multiplex ◽  
Complementary Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Optical Modulator ◽  
Grating Coupler ◽  
Coupling Loss ◽  
Wavelength Division ◽  
Silicon Photonic ◽  
Fiber Misalignment

A 4 × 25 Gb/s ultrawide misalignment tolerance wavelength-division-multiplex (WDM) transmitter based on novel bidirectional vertical grating coupler has been demonstrated on complementary metal-oxide-semiconductor (CMOS)-compatible silicon-on-insulator (SOI) platform. Simulations indicate the bidirectional grating coupler (BGC) is widely misalignment tolerant, with an excess coupling loss of only 0.55 dB within ±3 μm fiber misalignment range. Measurement shows the excess coupling loss of the BGC is only 0.7 dB within a ±2 μm fiber misalignment range. The bidirectional grating structure not only functions as an optical coupler, but also acts as a beam splitter. By using the bidirectional grating coupler, the silicon optical modulator shows low insertion loss and large misalignment tolerance. The eye diagrams of the modulator at 25 Gb/s don’t show any obvious deterioration within the waveguide-direction fiber misalignment ranger of ±2 μm, and still open clearly when the misalignment offset is as large as ±4 μm.

Ethanol Sensor Based on Microring Resonator

2013 ◽  
Vol 655-657 ◽  
pp. 669-672
Author(s):  
Yao Chen ◽  
Yu Li Ding ◽  
Zheng Yu Li
Keyword(s):  
Chemical Sensors ◽  
Environmental Control ◽  
Low Cost ◽  
Virus Detection ◽  
Complementary Metal Oxide Semiconductor ◽  
Medical Diagnostics ◽  
Ethanol Solution ◽  
Microring Resonator ◽  
Oxide Semiconductor ◽  
Detection Mechanism

Chemical sensors is gaining long-standing interests due to their applications in many areas such as bacterial and virus detection, medical diagnostics, drug development, food safety and environmental control. Among the existing chemical sensors, optical planar sensors show promising and attempt to beat their commercialized competitors because of their robustness, lable-free detection mechanism, mature complementary metal oxide semiconductor (coms) fabrication technology and naturally low cost. Silicon nitride microring resonators were demonstrated as chemical sensors. Using the technique of coms technology, the microring devices were fabricated with 200 µm in radius. Performance of the devices was measured, which showed the quality factor (q) was up to 25,000. Sensitivity of 108.9336 nm per reflective index unit (nm/riu) and detection limit of 1.836×10-4 riu were demonstrated by using various concentrations of ethanol solution as analytes.

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