scholarly journals Tailorable and Broadband On-Chip Optical Power Splitter

2019 ◽  
Vol 9 (20) ◽  
pp. 4239 ◽  
Author(s):  
Hyeongpin Kim ◽  
Heedeuk Shin
Keyword(s):  
Integrated Circuits ◽  
Insertion Loss ◽  
Optical Power ◽  
Power Splitting ◽  
Power Ratio ◽  
Power Splitter ◽  
Splitting Ratio ◽  
Low Insertion Loss ◽  
On Chip ◽  
Tapered Waveguides

An on-chip optical power splitter is a key component of photonic signal processing and quantum integrated circuits and requires compactness, wideband, low insertion loss, and variable splitting ratio. However, designing an on-chip splitter with both customizable splitting ratio and wavelength independence is a big challenge. Here, we propose a tailorable and broadband optical power splitter over 100 nm with low insertion loss less than 0.3%, as well as a compact footprint, based on 1×2 interleaved tapered waveguides. The proposed scheme can design the output power ratio of transverse electric modes, lithographically, and a selection equation of a power splitting ratio is extracted to obtain the desired power ratio. Our splitter scheme is close to an impeccable on-chip optical power splitter for classical and quantum integrated photonic circuits.

Optical Power Splitter Integrated Chip with Large Tunable Range of Power Splitting Ratio

2021 ◽  
Vol 41 (6) ◽  
pp. 0623001
Author(s):  
廖莎莎 Liao Shasha ◽  
廖柯 Liao Ke ◽  
包航 Bao Hang ◽  
张甜甜 Zhang Tiantian ◽  
刘继伟 Liu Jiwei ◽  
...  
Keyword(s):  
Optical Power ◽  
Power Splitting ◽  
Power Splitter ◽  
Tunable Range ◽  
Splitting Ratio

scholarly journals Polarization-Insensitive and Broadband Optical Power Splitter With a Tunable Power Splitting Ratio

2017 ◽  
Vol 9 (3) ◽  
pp. 1-9 ◽  
Author(s):  
Xiuling Deng ◽  
Lianshan Yan ◽  
Hengyun Jiang ◽  
Wei Pan ◽  
Bin Luo ◽  
...  
Keyword(s):  
Optical Power ◽  
Power Splitting ◽  
Power Splitter ◽  
Splitting Ratio ◽  
Polarization Insensitive

MODELING AND DESIGN OF REALISTIC Si3N4-BASED INTEGRATED OPTICAL PROGRAMMABLE POWER SPLITTER

2010 ◽  
Vol 19 (02) ◽  
pp. 255-268
Author(s):  
H. P. URANUS ◽  
H. J. W. M. HOEKSTRA ◽  
R. STOFFER
Keyword(s):  
Phase Shift ◽  
Directional Coupler ◽  
Phase Shifter ◽  
Optical Power ◽  
Power Splitting ◽  
Device Structure ◽  
Power Splitter ◽  
Splitting Ratio ◽  
Integrated Optical ◽  
Mode Solver

Controllable splitting of optical power with a large splitting ratio range is often required in an integrated optical chip, e.g. for the readout of phase-shift in a slow-light sensor. In this work, we report the modeling and design of an integrated optical programmable power splitter consisting of a Y-junction with a programmable phase-shifter cascaded to a directional coupler. We used a vectorial mode solver, and a combination of a transfer matrix method with a 3D vectorial coupled-mode theory (CMT) to compute the power transfer ratio of a realistic device structure made of Si 3 N 4, TEOS, and SiO 2 grown on a Si substrate. In the simulations, waveguide attenuation values derived from the measured attenuation of a prefabricated test wafer, have been taken into account. Vectorial modal fields of individual waveguides, as computed by a mode solver, were used as the basis for the CMT computation. In the simulation, an operational wavelength around 632.8 nm was assumed. Our simulations reveal that maximum power splitting ratio can be achieved when the directional coupler is operated as a 3-dB coupler with the phase-shifter set to produce a 90° phase-shift. The required coupler length for such desired operating condition is highly-dependent on the gap size. On the other hand, the inclusion of the waveguide loss and the non-parallel section of the directional coupler into the model only slightly affect the results.

An Optical Power Splitter With Variable Power Splitting Ratio

2011 ◽  
Vol 23 (14) ◽  
pp. 1004-1006 ◽  
Author(s):  
Shaohua Tao ◽  
Bingchu Yang ◽  
Hui Xia ◽  
Hua Wang ◽  
Guo-Qiang Lo
Keyword(s):  
Optical Power ◽  
Power Splitting ◽  
Power Splitter ◽  
Splitting Ratio ◽  
Variable Power

scholarly journals Integrated Optical Power Splitter With Continuously Adjustable Power Splitting Ratio

2020 ◽  
Vol 12 (6) ◽  
pp. 1-13
Author(s):  
Shasha Liao ◽  
Hang Bao ◽  
Tiantian Zhang ◽  
Jiwei Liu ◽  
Xi Liao ◽  
...  
Keyword(s):  
Optical Power ◽  
Power Splitting ◽  
Power Splitter ◽  
Splitting Ratio ◽  
Integrated Optical

scholarly journals High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1304
Author(s):  
Raquel Fernández de Cabo ◽  
David González-Andrade ◽  
Pavel Cheben ◽  
Aitor V. Velasco
Keyword(s):  
Integrated Circuits ◽  
Fundamental Mode ◽  
High Performance ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Power Splitting ◽  
Excess Loss ◽  
Power Splitters ◽  
On Chip ◽  
Efficient Power

Efficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power splitters suffer from fundamental mode losses due to limited fabrication resolution near the junction tip. In order to circumvent this limitation, we propose a new type of high-performance Y-junction power splitter that incorporates subwavelength metamaterials. Full three-dimensional simulations show a fundamental mode excess loss below 0.1 dB in an ultra-broad bandwidth of 300 nm (1400–1700 nm) when optimized for a fabrication resolution of 50 nm, and under 0.3 dB in a 350 nm extended bandwidth (1350–1700 nm) for a 100 nm resolution. Moreover, analysis of fabrication tolerances shows robust operation for the fundamental mode to etching errors up to ± 20 nm. A proof-of-concept device provides an initial validation of its operation principle, showing experimental excess losses lower than 0.2 dB in a 195 nm bandwidth for the best-case resolution scenario (i.e., 50 nm).

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

scholarly journals A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 236 ◽  
Author(s):  
Wonseok Choe ◽  
Jinho Jeong
Keyword(s):  
Integrated Circuits ◽  
Insertion Loss ◽  
Low Cost ◽  
Three Dimensional ◽  
Equivalent Circuit Model ◽  
Dipole Antenna ◽  
Impedance Match ◽  
Inp Substrate ◽  
On Chip ◽  
High Dielectric

A waveguide-to-microstrip transition is an essential component for packaging integrated circuits (ICs) in rectangular waveguides, especially at millimeter-wave and terahertz (THz) frequencies. At THz frequencies, the on-chip transitions, which are monolithically integrated in ICs are preferred to off-chip transitions, as the former can eliminate the wire-bonding process, which can cause severe impedance mismatch and additional insertion loss of the transitions. Therefore, on-chip transitions can allow the production of low cost and repeatable THz modules. However, on-chip transitions show limited performance in insertion loss and bandwidth, more seriously, this is an in-band resonance issue. These problems are mainly caused by the substrate used in the THz ICs, such as an indium phosphide (InP), which exhibits a high dielectric constant, high dielectric loss, and high thickness, compared with the size of THz waveguides. In this work, we propose a broadband THz on-chip transition using a dipole antenna with an integrated balun in the InP substrate. The transition is designed using three-dimensional electromagnetic (EM) simulations based on the equivalent circuit model. We show that in-band resonances can be induced within the InP substrate and also prove that backside vias can effectively eliminate these resonances. Measurement of the fabricated on-chip transition in 250 nm InP heterojunction bipolar transistor (HBT) technology, shows wideband impedance match and low insertion loss at H-band frequencies (220–320 GHz), without in-band resonances, due to the properly placed backside vias.

Ultra-compact low-loss 1 × 4 optical power splitter with splitting ratio of 1∶2∶4∶8 based on two-stage cascaded MMI couplers

2019 ◽  
Vol 44 (22) ◽  
pp. 5622
Author(s):  
Zezheng Li ◽  
Yang Liu ◽  
Huan Guan ◽  
Weihua Han ◽  
Zhiyong Li
Keyword(s):  
Optical Power ◽  
Low Loss ◽  
Two Stage ◽  
Power Splitter ◽  
Splitting Ratio
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