Second-Harmonic Generation in Mie-Resonant GaAs Nanowires

We investigate the enhancement of second-harmonic generation in cylindrical GaAs nanowires. Although these nanostructures confine light in two dimensions, power conversion efficiencies on the order of 10 − 5 with a pump peak intensity of ~ 1 GW / cm 2 are possible if the pump and the second-harmonic fields are coupled to the Mie-type resonances of the nanowire. We identify a large range of nanowire radii in which a double-resonance condition, i.e., both the pump and the second-harmonic fields excite normal modes of the nanowire, induces a high-quality-factor peak of conversion efficiency. We show that second-harmonic light can be scattered with large efficiency even if the second-harmonic photon energy is larger than 1.42 eV, i.e., the electronic bandgap of GaAs, above which the material is considered opaque. Finally, we evaluate the efficiency of one-photon absorption of second-harmonic light and find that resonant GaAs nanowires absorb second-harmonic light in the near-field region almost at the same rate at which they radiate second-harmonic light in the far-field region.