scholarly journals Study of Implantation Defects in CVD Graphene by Optical and Electrical Methods

2019 ◽  
Vol 9 (3) ◽  
pp. 544 ◽  
Author(s):  
Grzegorz Gawlik ◽  
Paweł Ciepielewski ◽  
Jacek Baranowski
Keyword(s):  
Electrical Transport ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Defect Concentration ◽  
Graphene Monolayer ◽  
Transport Parameters ◽  
Raman Modes ◽  
The Mean ◽  
Versus Defect ◽  
Chemical Vapor Deposition Graphene

A Chemical Vapor Deposition graphene monolayer grown on 6H–SiC (0001) substrates was used for implantation experiments. The graphene samples were irradiated by He+ and N+ ions. The Raman spectra and electrical transport parameters were measured as a function of increasing implantation fluence. The defect concentration was determined from intensity ratio of the Raman D and G peaks, while the carrier’s concentration was determined from the relations between G and 2D Raman modes energies. It was found that the number of defects generated by one ion is 0.0025 and 0.045 and the mean defect radius about 1.5 and 1.34 nm for He+ and N+, respectively. Hole concentration and mobility were determined from van der Pauw measurements. It was found that mobility decreases nearly by three orders of magnitude with increase of defect concentration. The inverse of mobility versus defect concentration is a linear function, which indicates that the main scattering mechanism is related to defects generated by ion implantation. The slope of inverse mobility versus defect concentration provides the value of defect radius responsible for scattering carriers at about 0.75 nm. This estimated defect radius indicates that the scattering centres most likely consist of reconstructed divacancies or larger vacancy complexes.

scholarly journals Imaging of local structures affecting electrical transport properties of large graphene sheets by lock-in thermography

2019 ◽  
Vol 5 (2) ◽  
pp. eaau3407 ◽  
Author(s):  
H. Nakajima ◽  
T. Morimoto ◽  
Y. Okigawa ◽  
T. Yamada ◽  
Y. Ikuta ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Electrical Transport Properties ◽  
Large Area ◽  
Graphene Layers ◽  
Device Applications ◽  
Chemical Vapor Deposition Graphene ◽  
Lock In

The distribution of defects and dislocations in graphene layers has become a very important concern with regard to the electrical and electronic transport properties of device applications. Although several experiments have shown the influence of defects on the electrical properties of graphene, these studies were limited to measuring microscopic areas because of their long measurement times. Here, we successfully imaged various local defects in a large area of chemical vapor deposition graphene within a reasonable amount of time by using lock-in thermography (LIT). The differences in electrical resistance caused by the micrometer-scale defects, such as cracks and wrinkles, and atomic-scale domain boundaries were apparent as nonuniform Joule heating on polycrystalline and epitaxially grown graphene. The present results indicate that LIT can serve as a fast and effective method of evaluating the quality and uniformity of large graphene films for device applications.

CONTROLLABLE CHEMICAL VAPOR DEPOSITION SYNTHESIS OF SINGLE-WALL CARBON NANOTUBES USING MIST FLOW METHOD

NANO ◽  
2012 ◽  
Vol 07 (06) ◽  
pp. 1250045 ◽  
Author(s):  
YUN SUN ◽  
RYO KITAURA ◽  
TAKUYA NAKAYAMA ◽  
YASUMITSU MIYATA ◽  
HISANORI SHINOHARA
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Wall Carbon Nanotubes ◽  
Flow Method ◽  
Mist Flow ◽  
Mean Diameter ◽  
The Mean

The influences of synthesis parameters on the mean diameter and diameter distribution of as-grown single-wall carbon nanotubes (SWCNTs) with chemical vapor deposition (CVD) using the mist flow method have been investigated in detail with Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). We found that CVD reaction temperature and flow rate play an essential role in controlling the mean diameter and the quality of as-grown SWCNTs. Furthermore, we found that the carbon supply kinetics can be a dominant factor to determine the diameter of as-grown SWCNTs in the present mist flow method. Under a different combination of various parameters, the mean diameter of SWCNTs can be varied from 0.9 nm to 1.5 nm controllably.

scholarly journals Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

2014 ◽  
Vol 116 (12) ◽  
pp. 123708 ◽  
Author(s):  
Tymoteusz Ciuk ◽  
Semih Cakmakyapan ◽  
Ekmel Ozbay ◽  
Piotr Caban ◽  
Kacper Grodecki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Induced Resistance ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Step Edge ◽  
Free Standing ◽  
Chemical Vapor Deposition Graphene

scholarly journals Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5339
Author(s):  
Lian Zhang ◽  
Rong Wang ◽  
Zhe Liu ◽  
Zhe Cheng ◽  
Xiaodong Tong ◽  
...  
Keyword(s):  
First Principles ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Nitrogen Vacancy ◽  
First Principle ◽  
Mg Doping ◽  
Limiting Condition ◽  
P Type

This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy.

scholarly journals Low-Temperature Chemical Vapor Deposition Growth of MoS2 Nanodots and Their Raman and Photoluminescence Profiles

2021 ◽  
Vol 3 ◽  
Author(s):  
Larionette P. L. Mawlong ◽  
Ravi K. Biroju ◽  
P. K. Giri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Chemical Vapor Deposition Growth ◽  
Raman Modes

We report on the growth of an ordered array of MoS2 nanodots (lateral sizes in the range of ∼100–250 nm) by a thermal chemical vapor deposition (CVD) method directly onto SiO2 substrates at a relatively low substrate temperature (510–560°C). The temperature-dependent growth and evolution of MoS2 nanodots and the local environment of sulfur-induced structural defects and impurities were systematically investigated by field emission scanning electron microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) techniques. At the substrate temperature of 560°C, we observed mostly few-layer MoS2, and at 510°C, multilayer MoS2 growth, as confirmed from the Raman line shape analysis. With reduced substrate temperature, the density of MoS2 nanodots decreases, and layer thickness increases. Raman studies show characteristic Raman modes of the crystalline MoS2 layer, along with two new Raman modes centered at ∼346 and ∼361 cm−1, which are associated with MoO2 and MoO3 phases, respectively. Room temperature photoluminescence (PL) studies revealed strong visible PL from MoS2 layers, which is strongly blue-shifted from the bulk MoS2 flakes. The strong visible emission centered at ∼ 658 nm signifies a free excitonic transition in the direct gap of single-layer MoS2. Position-dependent PL profiles show excellent uniformity of the MoS2 layers for samples grown at 540 and 560°C. These results are significant for the low-temperature CVD growth of a few-layer MoS2 dots with direct bandgap photoluminescence on a flexible substrate.

A STUDY OF FEMTOSECOND LASER POLISHING OF CVD NANOPOLYCRYSTALLINE DIAMOND FILMS

2021 ◽  
pp. 2150023
Author(s):  
YU-XIAO CUI ◽  
PING GUO ◽  
XUEMING ZHU ◽  
YAN-LING TIAN ◽  
DA-WEI ZHANG ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Fluence ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Laser Pulses ◽  
Promising Technique ◽  
Laser Polishing ◽  
Laser Fluences ◽  
Fs Laser ◽  
The Mean

Femtosecond (fs) laser ablation has been recognized as an effective and promising technique for high-precision processing of natural and synthesized diamond. In this work, a study of femtosecond laser polishing for nanopolycrystalline diamond (NCD) films by chemical vapor deposition (CVD) is reported. The laser irradiation is induced by 200-fs laser pulses with a repetition frequency of 50[Formula: see text]MHz, and various laser fluences are employed to investigate their polishing effectiveness. The results show that the optimal laser fluence is 0.7[Formula: see text]J/cm2, at which the nanodiamond grains on top of the cauliflower-like clusters of NCD films can be ablated. With such laser fluence, the mean surface roughness of NCD films reduces from 73.84[Formula: see text]nm to 31.88[Formula: see text]nm, which presents a 57% reduction. Nevertheless, when the laser fluence rises beyond 0.7[Formula: see text]J/cm2, large amount of amorphous carbon (a-C) balls and porous lava-like morphology would come into being, resulting in severe degradation of the NCD surface.

Carbon Incorporation in Gaas grown by UHVCVD Using Trimethylgallium and Arsine

1992 ◽  
Vol 281 ◽  
Author(s):  
Seong-Ju Park ◽  
Jeong-Rae Ro ◽  
Jae-Ki Sim ◽  
El-Hang Lee
Keyword(s):  
Growth Rates ◽  
Hole Concentration ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Chemical Beam Epitaxy ◽  
Hydrogen Atoms ◽  
Carbon Incorporation ◽  
Significant Drop ◽  
P Type

ABSTRACTWe present results of a study on the effect of unprecracked arsine(AsH3) and trimethylgallium(TMGa) on carbon incorporation in UHVCVD(Ultra High Vacuum Chemical Vapor Deposition) grown GaAs epilayers on GaAs(100). Three distinct temperature-dependent regions of growth rates were identified as growth temperature was increased from 570 to 690°C. The growth rates were also strongly dependent on V/III ratio in a range of 5 to 30, which clearly indicates that the growth rate is determined by the amount of arsenic adsorbed on the surface at low V/III ratio and adsorption of TMGa or decomposition process at high V/III ratio. Hall concentration measurements and low temperature photoluminescence data show that the films are all p-type and their impurity concentrations are reduced by two orders of magnitude compared to those of epilayers grown by CBE(Chemical Beam Epitaxy) which employs TMGa and arsenic(precracked arsines) as source materials. Our results indicate that the hydrogen atoms dissociated from adsorbed arsine may remove hydrocarbon species resulting in a significant drop in hole concentration.

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