scholarly journals A 2.4 GHz 20 W 8-Channel RF Source Module with Improved Channel Output Balance

2021 ◽  
Vol 11 (16) ◽  
pp. 7491
Author(s):  
Hyosung Nam ◽  
Taewan Kim ◽  
Taejoo Sim ◽  
Sooji Bae ◽  
Junghyun Kim
Keyword(s):  
Output Power ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Liquid Cooling ◽  
Water Jacket ◽  
Channel Output ◽  
Electron Mobility Transistors ◽  
Power Amplification ◽  
Module Size ◽  
Control Part

This paper presents a 2.4 GHz 20 W 8-channel radio frequency (RF) source module with improved channel output balance. The proposed RF source module is composed of an RF source generation/DC control part, a power amplification part, and a power dividing part. A 2-stage power amplifier (PA) is combined with gallium nitride high-electron-mobility transistors, including a 25 W transistor and 2-way combined 120 W transistors as the drive and main PA, respectively. In addition, a structure was applied to improve the channel output balance compared to that of the previous module, and the differences of the phase and magnitude of the output power between channels are alleviated within 0.35° and 0.18 dB, respectively. A water jacket was implemented under the drive and main PAs for liquid cooling; however, unlike in the previous work, it was designed by optimizing the size of the water jacket and reducing unnecessary materials using a brazing process. The output power at each channel was 43 dBm, and the drain efficiency was more than 50% at 2.4 GHz. The total module size was 244 mm × 247.4 mm × 30 mm, and its volume was reduced by approximately 58.4% compared to that of the previous module.

AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JN16 ◽  
Author(s):  
Stefano Tirelli ◽  
Diego Marti ◽  
Lorenzo Lugani ◽  
Jean-François Carlin ◽  
Nicolas Grandjean ◽  
...  
Keyword(s):  
Output Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AlGaN/GaN epitaxy and technology

2010 ◽  
Vol 2 (1) ◽  
pp. 3-11 ◽  
Author(s):  
Patrick Waltereit ◽  
Wolfgang Bronner ◽  
Rüdiger Quay ◽  
Michael Dammann ◽  
Rudolf Kiefer ◽  
...  
Keyword(s):  
Output Power ◽  
Supply Voltage ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Base Station ◽  
High Electron ◽  
Power Performance ◽  
Power Added Efficiency ◽  
Electron Mobility Transistors ◽  
Conversion Efficiencies

We present an overview on epitaxial growth, processing technology, device performance, and reliability of our GaN high electron mobility transistors (HEMTs) manufactured on 3- and 4-in. SiC substrates. Epitaxy and processing are optimized for both performance and reliability. We use three different gate lengths, namely 500 nm for 1–6 GHz applications, 250 nm for devices between 6 and 18 GHz, and 150 nm for higher frequencies. The developed HEMTs demonstrate excellent high-voltage stability, high power performance, and large DC to RF conversion efficiencies for all gate lengths. On large gate width devices for base station applications, an output power beyond 125 W is achieved with a power added efficiency around 60% and a linear gain around 16 dB. Reliability is tested both under DC and RF conditions with supply voltage of 50 and 30 V for 500 and 250 nm gates, respectively. DC tests on HEMT devices return a drain current change of just about 10% under IDQ conditions. Under RF stress the observed change in output power density is below 0.2 dB after more than 1000 h for both gate length technologies.

MBE-Grown AlGaN/GaN HEMTs on SiC

2004 ◽  
Vol 14 (03) ◽  
pp. 732-737 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
ARPAN CHAKRABORTY ◽  
UMESH K. MISHRA ◽  
CHRISTIANE POBLENZ ◽  
PATRICK WALTEREIT ◽  
...  
Keyword(s):  
Output Power ◽  
High Electron Mobility Transistors ◽  
Layer Growth ◽  
Carbon Doping ◽  
Limiting Factor ◽  
High Electron ◽  
Nucleation Layer ◽  
Power Added Efficiency ◽  
Electron Mobility Transistors ◽  
Gan Hemts

We report on the development of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on SiC using plasma-assisted molecular beam epitaxy (MBE). In this work, we show that performance comparable to state-of-the-art AlGaN/GaN HEMTs can be achieved using MBE-grown material. Buffer leakage was an important limiting factor for these devices. The use of either carbon-doped buffers, or low Al/N ratio in the nucleation layer growth were effective in reducing buffer leakage. Studies varying the thickness and concentration of the carbon doping were carried out to determine the effect of different carbon doping profiles on the insulating and dispersive properties of buffers, On devices without field plates, at 4 GHz an output power density of 12 W/mm was obtained with a power-added efficiency (PAE) of 46 % and gain of 14 dB. 15.6 W/mm with PAE of 56 % was obtained from these devices after field-plating. Two-tone linearity measurements of these devices were also carried out. At a C/I 3 level of 30 dBc, the devices measured had an output power of 1.9 W/mm with a PAE of 53 %. The effect of the Al/N ratio in the AlN nucleation layer on buffer leakage was studied. N -rich conditions yielded highly insulating GaN buffers without carbon doping. At 4 GHz, devices without field plates delivered 4.8 W/mm with a PAE of 62 %. At a higher drain bias (50 V), 8.1 W/mm with a PAE of 38 % was achieved.

scholarly journals On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology

Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2928
Author(s):  
Hsuan-Ling Kao
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
High Electron Mobility Transistors ◽  
Voltage Controlled Oscillator ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
On Chip ◽  
Low Phase Noise

This study presents a voltage-controlled oscillator (VCO) in a cross-coupled pair configuration using a multi-tapped switched inductor with two switch-loaded transformers in 0.5 µm GaN technology. Two switch-loaded transformers are placed at the inner and outer portions of the multi-tapped inductor. All the switches are turned off to obtain the lowest sub-band. The outer transformer with three pairs of switches is turned on alternately to provide three sub-band modes. A pair of switches at the inner transformer provide a high-frequency band. Two switch-loaded transformers are turned on to provide the highest sub-band. Six modes are selected to provide a wide tuning range. The frequency tuning range (FTR) of the VCO is 27.8% from 3.81 GHz to 8.04 GHz with a varactor voltage from 13 V to 22 V. At a 1 MHz frequency offset from the carrier frequency of 4.27 GHz, the peak phase noise is −119.17 dBc/Hz. At a power supply of 12 V, the output power of the carrier at 4.27 GHz is 20.9 dBm. The figure of merit is −186.93 dB because the VCO exhibits a high output power, low phase noise, and wide FTR. To the best of the author’s knowledge, the FTR in VCOs made of GaN-based high electron mobility transistors is the widest reported thus far.

scholarly journals A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios

Micromachines ◽  
2020 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Dawid Kuchta ◽  
Daniel Gryglewski ◽  
Wojciech Wojtasiak
Keyword(s):  
Output Power ◽  
Power Efficiency ◽  
High Electron Mobility Transistors ◽  
Phase Changes ◽  
High Electron ◽  
Frequency Range ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Amplifier Design ◽  
Gan On Si

Power amplifiers applied in modern active electronically scanned array (AESA) radars and 5G radios should have similar features, especially in terms of phase distortion, which dramatically affects the spectral regrowth and, moreover, they are difficult to be compensated by predistortion algorithms. This paper presents a GaN-based power amplifier design with a reduced level of transmittance distortions, varying in time, without significantly worsening other key features such as output power, efficiency and gain. The test amplifier with GaN-on-Si high electron mobility transistors (HEMT) NPT2018 from MACOM provides more than 17 W of output power at the 62% PAE over a 1.0 GHz to 1.1 GHz frequency range. By applying a proposed design approach, it was possible to decrease phase changes on test pulses from 0.5° to 0.2° and amplitude variation from 0.8 dB to 0.2 dB during the pulse width of 40 µs and 40% duty cycle.

HVPE-GROWN AlGaN/GaN HEMTs

2003 ◽  
Vol 764 ◽  
Author(s):  
B. Luo ◽  
F. Ren ◽  
M. A. Mastro ◽  
D. Tsvetkov ◽  
A. Pechnikov ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Hydride Vapor Phase Epitaxy ◽  
Root Mean Square Roughness ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Collapse Characteristics ◽  
Capacitance Voltage ◽  
Source Current ◽  
Measurement Area

AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

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