scholarly journals Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO2 Films

2021 ◽  
Vol 11 (9) ◽  
pp. 4295
Author(s):  
Yuwei Cai ◽  
Qingzhu Zhang ◽  
Zhaohao Zhang ◽  
Gaobo Xu ◽  
Zhenhua Wu ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Integrated Circuit ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Great Influence ◽  
Ferroelectric Material ◽  
Ferroelectric Materials ◽  
Fatigue Properties ◽  
The Relationship ◽  
Circuit Technology

HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material’s inherent fatigue properties have limited its potential for device application. This paper systematically investigates the effects of tensile stress and annealing temperature on the endurance and ferroelectric properties faced by Zr-doped HfO2 ferroelectric film. The remnant polarization (Pr) shows an increasing trend with annealing temperature, while the change in the coercive electric field (Ec) is not obvious in terms of the relationship with tensile stress or annealing temperature. In addition, the application of tensile stress does help to improve the endurance characteristics by about two orders of magnitude for the ferroelectric material, and the endurance properties show a tendency to be negatively correlated with annealing temperature. Overall, although the effect of stress on the ferroelectricity of a HZO material is not obvious, it has a great influence on its endurance properties and can optimize the endurance of the material, and ferroelectricity exhibits a higher dependence on temperature. The optimization of the endurance properties of HZO materials by stress can facilitate their development and application in future integrated circuit technology.

Analysis and Design of Smart Electromagnetic Structures

2008 ◽  
Author(s):  
Prashanth Ramesh ◽  
Gregory Washington
Keyword(s):  
Dielectric Permittivity ◽  
Electric Field ◽  
Ambient Temperature ◽  
Ferroelectric Properties ◽  
Mechanical Strain ◽  
Ferroelectric Materials ◽  
Analysis And Design ◽  
Antenna Performance ◽  
Active Research ◽  
The Relationship

Use of ferroelectric materials to improve antenna performance is an area of active research. Applying an electric field across a ferroelectric used as the dielectric in an antenna enables tuning the antenna performance. Ferroelectrics also have coupled electromechanical behavior due to which it is sensitive to mechanical strains and fluctuations in ambient temperature. Use of ferroelectrics in antenna structures, especially those subject to mechanical and thermal loads, requires knowledge of the phenomenological relationship between the ferroelectric properties of interest (especially dielectric permittivity) and the external physical variables, viz. electric field(s), mechanical strains and temperature. To this end, a phenomenological model of ferroelectric materials based on the Devonshire thermodynamic theory is presented. This model is then used to obtain a relationship expressing the dependence of the dielectric permittivity on the mechanical strain, applied electric field and ambient temperature. The relationship is compared with published experimental data and other models in literature. Subsequently, a relationship expressing the dependence of antenna performance on those physical quantities is described.

THE NEGATIVE EFFECT OF NON-NBT PHASE ON THE FERROELECTRIC PROPERTIES OF SR-DOPED NBT THIN FILM AND THE SOLUTIONS

2013 ◽  
Vol 20 (02) ◽  
pp. 1350012 ◽  
Author(s):  
JIANYUAN XU ◽  
HUIZHONG XU ◽  
YAPING WANG ◽  
DAJI LI ◽  
ZHUO WANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Ferroelectric Material ◽  
Excessive Amount ◽  
Annealing Duration ◽  
Doping Amount ◽  
Solution Deposition ◽  
Negative Effect ◽  
Metal Organic ◽  
The Relationship

Na0.5Bi0.5TiO3 (NBT) is a kind of excellent lead-free ferroelectric material. However, during the preparation of the NBT thin film by the chemical methods, the non-NBT phase is easier to be formed, which has a negative effect on the ferroelectric properties. In this paper, the Sr -doped NBT (SNBT) films were prepared by metal–organic solution deposition. The effects of Sr -doping amount, annealing temperature and duration on the appearance of non-NBT phase, and the relationship between the amount of non-NBT phase and the ferroelectric properties of the thin film was studied in detail. The results show that the appearance of the non-NBT phase in the SNBT is mainly because of the excessive amount of the doped ions or the excessive evaporation of Bi caused by long annealing duration. The excessive amount of the non-NBT phase will weaken the remanent polarization of the thin films. Using excessive 20% of Bi and reducing the annealing duration are the effective method for suppressing the non-NBT phase and improving the ferroelectricity of NBT-based film.

scholarly journals ANNEALING TEMPERATURES’ EFFECTS ON MICROSTRUCTURE AND OPTICAL PROPERTIES OF Ba0.95Sr0.05TiO3 FILMS

2021 ◽  
Vol 23 (1) ◽  
pp. 31
Author(s):  
Yofentina Iriani ◽  
Fahru Nurosyid ◽  
Ratna Mayasari ◽  
Dianisa Khoirum Sandi
Keyword(s):  
Optical Properties ◽  
Annealing Temperature ◽  
Ferroelectric Material ◽  
Ferroelectric Materials ◽  
Bandgap Energy ◽  
Annealing Temperatures ◽  
Type Semiconductor ◽  
Bst Films ◽  
P Type ◽  
Quartz Substrates

ANNEALING TEMPERATURES’ EFFECTS ON MICROSTRUCTURE AND OPTICAL PROPERTIES OF Ba0.95Sr0.05TiO3 FILMS. Ferroelectric materials, one of which is Barium Strontium Titanate (BST), can be applied for photovoltaic. Ferroelectric films function as the P-type semiconductor in the P-N junction. BST (Ba0.95Sr0.05TiO3) films have been deposited on Pt/Si (111) and quartz substrates via the CSD method prepared by spin coater. The films were annealed at various temperatures of 800 °C, 900 °C, and 1000 °C to observe the annealing temperatures' effects on the microstructure and optical properties of the BST films. From the XRD results, the intensity of diffraction peaks gets higher along with the higher annealing temperature. It thus causes the level of crystallization and the crystal size of the Ba0.95Sr0.05TiO3 films to increase. The morphology results reveal that the grains size of the Ba0.95Sr0.05TiO3 films is getting larger with the higher annealing temperature. The optical properties examined in the Ba0.95Sr0.05TiO3 films include absorbance and bandgap energy values. Values of bandgap energy show a decrease with increasing sintering temperature. The smallest bandgap energy of the Ba0.95Sr0.05TiO3 film is achieved at 1000 °C of 3.20 eV. BST films were annealed at temperature 1000 °C attained from this study can be considered as candidate for a photovoltaic ferroelectric material.

Characteristics of Lateral Capacitor Based on High-K Materials

2006 ◽  
Vol 928 ◽  
Author(s):  
Thottam Kalkur ◽  
Mark Azadpour
Keyword(s):  
Integrated Circuit ◽  
Large Scale ◽  
Annealing Temperature ◽  
Negative Temperature ◽  
Ion Milling ◽  
Increase With Increase ◽  
High K ◽  
High K Materials ◽  
High K Dielectric ◽  
Circuit Technology

AbstractIn order to take advantage of continued interconnect scaling dimensions in very large scale integrated circuit technology, lateral capacitors with BST dielectric have been proposed. The lateral capacitors have been implemented by platinum/titanium metallization patterned by standard photolithographic techniques and ion-milling. The high-K dielectric BST has been deposited by spin-on MOD and radio frequency magnetron sputtering. The capacitance of lateral capacitor was found to increase with increase in thickness of BST and annealing temperature. The negative temperature dependence capacitance above room temperature shows that BST is in para-electric phase.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

PERFORMANCE AT THE EDGE: GALLIUM ARSENIDE AND SILICON ICs FOR OPTICAL ELECTRONICS

1991 ◽  
Vol 02 (03) ◽  
pp. 147-162 ◽  
Author(s):  
ROBERT G. SWARTZ
Keyword(s):  
Gallium Arsenide ◽  
Optical Communication ◽  
Optical Communications ◽  
Integrated Circuit ◽  
High Performance ◽  
Compound Semiconductor ◽  
Performance Curve ◽  
Semiconductor Technology ◽  
Market Trends ◽  
Circuit Technology

Compound semiconductor technology is rapidly entering the mainstream, and is quickly finding its way into consumer applications where high performance is paramount. But silicon integrated circuit technology is evolving up the performance curve, and CMOS in particular is consuming ever more market share. Nowhere is this contest more clearly evident than in optical communications. Here applications demand performance ranging from a few hundreds of megahertz to multi-gigahertz, from circuits containing anywhere from tens to tens of thousands of devices. This paper reviews the high performance electronics found in optical communication applications from a technology standpoint, illustrating merits and market trends for these competing, yet often complementary IC technologies.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

A New Approach for the Fabrication of Tetragonal BaTiO3 Nanoparticles

2021 ◽  
Vol 21 (4) ◽  
pp. 2692-2701
Author(s):  
Vu T. Tan ◽  
La The Vinh ◽  
Vu Minh Khoi ◽  
Huynh Dang Chinh ◽  
Pham Van Tuan ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Particle Size Effect ◽  
Ferroelectric Material ◽  
Tem Analysis ◽  
New Approach ◽  
Xrd Pattern ◽  
Munk Function ◽  
Oxide Nanoparticle ◽  
First Time ◽  
Batio3 Nanoparticles

For the first time, the BaTiO3 nano-sized particles were obtained through solid-state reaction by employing the titanium oxide nanoparticle. Meanwhile, by using TiO2 with micro-sized particles, the synthesized BaTiO3 shows the micro-sized. The XRD pattern confirms that both BaTiO3 nano-sized and micro-sized particles display the tetragonal structure. Both SEM and TEM analysis revealed that the size of the nano-sized material is in the range of 30–50 nm; in the meantime, the microsized material shows a size of 500 nm. The Eg of both BaTiO3 micro-sized and nano-sized were calculated by using the Kubelka-Munk function. The shifted bandgap of BaTiO3 nano-sized particle is nearly 0.24 eV larger than that of BaTiO3 miro-sized particle due to the particle size effect. The P-E measurement of n-BaTiO3 proved that the obtained BaTiO3 nano-sized is ferroelectric material. The result may provide a new route for the fabrication of barium titanate nanoparticle with ferroelectric properties.

scholarly journals Design and Development of a 3dB Quadrature Patch Hybrid Coupler

2018 ◽  
Vol 7 (2.6) ◽  
pp. 217
Author(s):  
B Sekharbabu ◽  
K Narsimha Reddy ◽  
S Sreenu
Keyword(s):  
Integrated Circuit ◽  
High Frequency ◽  
Return Loss ◽  
Coupling Factor ◽  
Power Combiners ◽  
Measurement Results ◽  
Structure Simulation ◽  
Hybrid Coupler ◽  
Port Device ◽  
Circuit Technology

In this paper a -3 dB, 90-degreephase shift RF quadrature patch hybrid coupler is designed to operate at 2.4GHz. Hybrid coupler is a four-port device, that’s accustomed split a signaling with a resultant 90degrees’ section shift between output signals whereas maintaining high isolation between the output ports. The RF quadrature patch hybrid coupler is used in various radio frequency applications including mixers, power combiners, dividers, modulators and amplifiers. The desired hybrid coupler is designed using FR-4 substrate with 1.6mm height in High Frequency Structure Simulation (HFSS) and the same is fabricated and tested. The designed Hybrid coupler is examined in terms of parameters like insertion Loss, coupling factor and return Loss. The simulation and measurement results are compared. Major advantages of the RF quadrature patch hybrid couplers are that they are compatible with integrated circuit technology.

Sign in / Sign up

Export Citation Format

Share Document