scholarly journals RBS Channeling MATLAB Application for Automated Measurement Control and Evaluation for 6MV Tandetron Accelerator

2021 ◽  
Vol 11 (9) ◽  
pp. 3817
Author(s):  
Maximilian Stremy ◽  
Dusan Horvath ◽  
Dusan Vana ◽  
Michal Kebisek ◽  
Gabriel Gaspar ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Measurement And Analysis ◽  
Measurement Control ◽  
Homogeneous Plane ◽  
Channeling Effect ◽  
High Voltage Engineering

Rutherford backscattering spectrometry (RBS) in channeling regimes (RBS/C), as an ion beam analysis method performed on a Tandetron 6MV accelerator, generally gives precise information about the structure of crystalline samples by combining RBS signals in the random and aligned configurations. This paper presents details about the design and implementation of tailored RBS/C measurements (coarse and fine) and data evaluation application developed in MATLAB for in situ accelerator control system ARGUS, delivered by High Voltage Engineering Europa BV (HVEE). Additionally, we examined two different ways of stepping during the measurement to reduce the possible inaccuracies related with goniometer’s backslash affecting the evaluation of spectra. Verification experiment was carried out using a 2-MeV 4He+-beam directed on a Si (100) substrate. The channeling effect is seen as channeling dips of a lower signal in an otherwise rather homogeneous plane. Implemented application significantly facilitates the RBS/C measurement and analysis of the experiments, and also extends the ion beam analysis portfolio of Advanced Technologies Research Institute. Finally, software is ready-to-use for any Tandetron based ion beam facility with the ARGUS software for accelerator control.

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

In situ characterization of rare earth-CdTe heterostructures by ion beam analysis

1994 ◽  
Vol 249 (2) ◽  
pp. 266-270 ◽  
Author(s):  
P Gros ◽  
G Fiat ◽  
D Brun ◽  
B Daudin ◽  
J Eymery ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Beam ◽  
In Situ Characterization ◽  
Ion Beam Analysis ◽  
Beam Analysis

IN SITU ION BEAM ANALYSIS OF CHEMICAL AND PLASMA ETCHING OF Si

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1419-1427
Author(s):  
KARUR R. PADMANABHAN
Keyword(s):  
Plasma Etching ◽  
Chemical Etching ◽  
Ion Beam ◽  
Etching Rate ◽  
Surface Damage ◽  
Moderate Increase ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Etched Surface

The possibility of carrying out in situ ion beam analysis of a gas-solid interface using RBS/Channeling techniques has been investigated using chemical and plasma etching of Si . A specially constructed thin Si window cell is used to initiate chemical etching of Si using Xe F 2. Analysis of etched Si surface using conventional, micro RBS/Channeling and computer simulated channeling spectra indicates a smooth damage free surface with fairly uniform etching. A moderate increase in etching rate and channeling χ min is observed in the presence of the analyzing beam. The results of chemical etching are compared with that due to Ar + and Xe + plasma induced etching of Si . In situ microbeam channeling analysis with CCM (Channeling Contrast Microscopy) of the plasma-etched surface indicates distinct differences in both etching rate and damage profile of Si (100) surface. The etching rate enhancement and damage profile have been explained using conventional TRIM analysis and ion beam surface damage.

Adsorption and diffusion of strontium in simulated rock fractures quantified via ion beam analysis

2012 ◽  
Vol 76 (8) ◽  
pp. 3203-3215 ◽  
Author(s):  
T. Ohe ◽  
B. Zou ◽  
K. Noshita ◽  
I. Gomez-Morilla ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rapid Determination ◽  
Ion Beam ◽  
Effective Diffusion ◽  
Atomic Weight ◽  
Alpha Particles ◽  
Transport Parameters ◽  
Ion Beam Analysis ◽  
Starting Solution ◽  
Beam Analysis

AbstractAn experimental technique has been developed and applied to the problem of determining effective diffusion coefficients and partition coefficients of Sr in low permeability geological materials. This technique, the micro-reactor simulated channel method (MRSC), allows rapid determination of contaminant transport parameters with resulting values comparable to those determined by more traditional methods and also creates product surfaces that are amenable for direct chemical analysis. An attempt to further constrain mass flux was completed by detailed ion beam analysis of polished tuff surfaces (tuff is a polycrystalline polyminerallic aggregate dominated by silicate phases) that had been reacted with Sr solutions at concentrations of 10−5, 10−3 and 10−1 mol l−1. Ion beam analysis was carried out using beams of both protons (using particle induced X-ray emission and elastic backscattering spectrometry or EBS) and alpha-particles (using Rutherford backscattering spectrometry). The ion beam analyses showed that increased solution concentrations resulted in increased surface concentrations and that in the highest concentration experiment, Sr penetrated to at least 4 μm below the primary interface. The Sr surface concentrations determined by EBS were 0.06 (±0.05), 0.87 (±0.30) and 2.40 (±1.0) atomic weight % in the experiments with starting solution concentrations of 10−5, 10−3, and 10−1 mol l−1, respectively.

scholarly journals In situ MeV ion beam analysis of ceramic surfaces modified by 100–400 keV ion irradiation

1996 ◽  
Vol 118 (1-4) ◽  
pp. 766-771 ◽  
Author(s):  
Ning Yu ◽  
Timothy E. Levine ◽  
Kurt E. Sickafus ◽  
Michael Nastasi ◽  
Jeremy N. Mitchell ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Ceramic Surfaces ◽  
Beam Analysis

Study of hydrogen isotopes behavior in carbon based materials with in situ ion beam analysis under plasma exposure

2013 ◽  
Vol 438 ◽  
pp. S1036-S1039 ◽  
Author(s):  
Y. Nakamura ◽  
M. Yamagiwa ◽  
T. Kaneko ◽  
N. Matsunami ◽  
N. Ohno ◽  
...  
Keyword(s):  
Ion Beam ◽  
Hydrogen Isotopes ◽  
Plasma Exposure ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Carbon Based

scholarly journals In situ ion-beam analysis and modification of sol-gel zirconia thin films

1995 ◽  
Vol 106 (1-4) ◽  
pp. 597-601 ◽  
Author(s):  
T.E. Levine ◽  
N. Yu ◽  
P. Kodali ◽  
K.C. Walter ◽  
M. Nastasi ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Sol Gel ◽  
Ion Beam Analysis ◽  
Beam Analysis

scholarly journals Atmosphere influence on in-situ ion beam analysis of thin film growth

1994 ◽  
Vol 253 (1-2) ◽  
pp. 247-253 ◽  
Author(s):  
Yuping Lin ◽  
Alan R. Krauss ◽  
Robert P.H. Chang ◽  
Orlando H. Auciello ◽  
Dieter M. Gruen ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ion Beam Analysis ◽  
Beam Analysis
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