Refractive Indices of Ge and Si at Temperatures between 4–296 K in the 4–8 THz Region
Keyword(s):
Refractive indices of high resistivity Si and Ge were measured at temperatures between 4–296 K and at frequencies between 4.2–7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of the temperature dependence of the refractive index is proposed.
2011 ◽
Vol 2011
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pp. 1-7
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Keyword(s):
1993 ◽
Vol 51
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pp. 908-909
Keyword(s):
1979 ◽
Vol 44
(7)
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pp. 2064-2078
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