scholarly journals Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory

2020 ◽  
Vol 10 (8) ◽  
pp. 2754
Author(s):  
Yu Zhang ◽  
Xiong Chen ◽  
Hao Zhang ◽  
Xicheng Wei ◽  
Xiangfeng Guan ◽  
...  
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Thermionic Emission ◽  
Surface States ◽  
Crystal Defects ◽  
Pinning Mechanism ◽  
Fermi Level Pinning ◽  
Order Of Magnitude ◽  
Semiconductor Contacts

Molybdenum disulfide (MoS2) field-effect transistors (FETs) with four different metallic electrodes (Au,Ag,Al,Cu) of drain-source were fabricated by mechanical exfoliation and vacuum evaporation methods. The mobilities of the devices were (Au) 21.01, (Ag) 23.15, (Al) 5.35 and (Cu) 40.52 cm2/Vs, respectively. Unpredictably, the on-state currents of four devices were of the same order of magnitude with no obvious difference. For clarifying this phenomenon, we calculated the Schottky barrier height (SBH) of the four metal–semiconductor contacts by thermionic emission theory and confirmed the existence of Fermi-level pinning (FLP). We suppose the FLP may be caused by surface states of the semiconductor produced from crystal defects.

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

2013 ◽  
Vol 103 (14) ◽  
pp. 143509 ◽  
Author(s):  
Noriyuki Taoka ◽  
Masafumi Yokoyama ◽  
Sang Hyeon Kim ◽  
Rena Suzuki ◽  
Sunghoon Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Fermi Level ◽  
Conduction Band ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Fermi Level Pinning

Reduction of Fermi level pinning at Cu–BP interfaces by atomic passivation

Nanoscale ◽  
2019 ◽  
Vol 11 (24) ◽  
pp. 11569-11576 ◽  
Author(s):  
Pengfei Ou ◽  
Xiao Zhou ◽  
Cheng Chen ◽  
Fanchao Meng ◽  
Yiqing Chen ◽  
...  
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Fermi Level Pinning ◽  
Semiconducting Material ◽  
Finite Band

Black phosphorus (BP) is a semiconducting material with a direct finite band gap in its monolayer, attracting intense attention for its applications in field-effect transistors.

Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯0) surfaces

2017 ◽  
Vol 110 (2) ◽  
pp. 022104 ◽  
Author(s):  
V. Portz ◽  
M. Schnedler ◽  
L. Lymperakis ◽  
J. Neugebauer ◽  
H. Eisele ◽  
...  
Keyword(s):  
Fermi Level ◽  
Surface States ◽  
Fermi Level Pinning

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

2000 ◽  
Vol 77 (2) ◽  
pp. 250-252 ◽  
Author(s):  
J. P. Ibbetson ◽  
P. T. Fini ◽  
K. D. Ness ◽  
S. P. DenBaars ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Surface States ◽  
Polarization Effects ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

scholarly journals Channel length-dependent characterisations of organic thin-film transistors with solution processable gadolinium phthalocyanine derivatives

2019 ◽  
Vol 31 (1) ◽  
pp. 265-273 ◽  
Author(s):  
Seema Barard ◽  
Debdyuti Mukherjee ◽  
Sujoy Sarkar ◽  
T. Kreouzis ◽  
I. Chambrier ◽  
...  
Keyword(s):  
Field Effect ◽  
Liquid Crystalline ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Active Layers ◽  
Order Of Magnitude ◽  
Scaling Down ◽  
Voltage Swing

AbstractSpin-coated 52-nm-thick films of newly synthesised gadolinium liquid crystalline bisphthalocyanine sandwich (GdPc2) complexes with octyl chains non-peripheral positions have been successfully employed as active layers for bottom-gate organic field effect transistors having both short $$(5\,\upmu {\text{m}})$$(5μm) and long $$( 20\,\upmu {\text{m}})$$(20μm) channels. The scaling down of the channel length $$( L )$$(L) decreases the field effect mobility due to the increase in the contact resistance between the gold electrodes and the GdPc2 semiconducting layer. Values of on–off ratio and sub-threshold voltage swing are higher nearly one order of magnitude for $$L = 5 \,\upmu{\text{ m}}$$L=5μm than those for $$L = 20\;\upmu m$$L=20μm.

Direct observation of the hysteretic Fermi level modulation in monolayer MoS2 field effect transistors

2020 ◽  
Vol 20 (2) ◽  
pp. 298-303
Author(s):  
Yuhang Wang ◽  
Dongyong Li ◽  
Xubo Lai ◽  
Boyang Liu ◽  
Yibao Chen ◽  
...  
Keyword(s):  
Fermi Level ◽  
Direct Observation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monolayer Mos2
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