scholarly journals Information Entropy Squeezing and Non-local Correlation Between a Two-Level Atom and Two-Mode Field Under the Classical Field Effect

2020 ◽  
Vol 8 ◽  
Author(s):  
E. M. Khalil ◽  
Sayed Abdel-Khalek ◽  
Waad Albogami ◽  
Jamel Bouslimi ◽  
Sayed M. Abo-Dahab ◽  
...  
Keyword(s):  
Information Entropy ◽  
Field Effect ◽  
Classical Field ◽  
Local Correlation ◽  
Entropy Squeezing ◽  
Mode Field ◽  
Level Atom ◽  
Non Local

Entropy squeezing for three-level atom interacting with a single-mode field

2019 ◽  
Vol 28 (6) ◽  
pp. 060304
Author(s):  
Fei-Fan Liu ◽  
Mao-Fa Fang ◽  
Xiong Xu
Keyword(s):  
Single Mode ◽  
Entropy Squeezing ◽  
Mode Field ◽  
Level Atom

Quantum information entropy and squeezing of 𝒫𝒯-symmetric potential

2021 ◽  
Vol 36 (10) ◽  
pp. 2150065
Author(s):  
Aarti Sharma ◽  
Pooja Thakur ◽  
Girish Kumar ◽  
Anil Kumar
Keyword(s):  
Phase Transition ◽  
Quantum Information ◽  
Information Entropy ◽  
Momentum Space ◽  
Quantum Mechanical ◽  
Position Space ◽  
Entropy Squeezing ◽  
Information Theoretic ◽  
Symmetric Potential ◽  
Quantum Mechanical Systems

The information theoretic concepts are crucial to study the quantum mechanical systems. In this paper, the information densities of [Formula: see text]-symmetric potential have been demonstrated and their properties deeply analyzed. The position space and momentum space information entropy is obtained and Bialynicki-Birula–Mycielski inequality is saturated for different parameters of the potential. Some interesting features of information entropy have been discussed. The variation in these entropies is described which gets saturated for specific values of the parameter. These have also been analyzed for the [Formula: see text]-symmetry breaking case. Further, the entropy squeezing phenomenon has been investigated in position space as well as momentum space. Interestingly, [Formula: see text] phase transition conjectures the entropy squeezing in position space and momentum space.

scholarly journals Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2879
Author(s):  
Amir Muhammad Afzal ◽  
Muhammad Farooq Khan ◽  
Jonghwa Eom
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Spin Precession ◽  
Orbital Interaction ◽  
Transition Metal Dichalcogenide ◽  
Precession Angle ◽  
Spin Orbital ◽  
Spintronic Devices ◽  
Non Local ◽  
Spin Fet

Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions between bilayer graphene (BLG) and multilayer tungsten disulfide (ML-WS2) give rise to fascinating properties for the realization of advanced spintronic devices. In this study, a BLG/ML-WS2 vdW heterostructure spin field-effect transistor (FET) was fabricated to demonstrate the gate modulation of Rashba-type SOI and spin precession angle. The gate modulation of Rashba-type SOI and spin precession has been confirmed using the Hanle measurement. The change in spin precession angle agrees well with the local and non-local signals of the BLG/ML-WS2 spin FET. The operation of a spin FET in the absence of a magnetic field at room temperature is successfully demonstrated.

scholarly journals High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

2011 ◽  
Vol 120 (6A) ◽  
pp. A-22-A-24 ◽  
Author(s):  
A. Taube ◽  
R. Kruszka ◽  
M. Borysiewicz ◽  
S. Gierałtowska ◽  
E. Kamińska ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
High Quality ◽  
Enhancement Mode ◽  
Mode Field ◽  
Effect Transistor
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